{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/30767"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/30767","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Photoelectron holography of metal adsorbates on semiconductor surfaces","abstract":"Photoelectron holography, a technique used to determine atomic surface structure, relies on the measurement of interference in the photoelectron wave as a function of incident photon energy and/or emission direction, namely the interference between the direct path of the photoelectron to the detector and the path which scatters off neighboring atoms. This interference creates oscillations which can be directly Fourier inverted to yield three-dimensional real-space images. This thesis describes several experiments in which photoelectron holography has been used to study the atomic structure of metal adsorbates on semiconductor surfaces. The surface structure of Pb on Si(lll) has been investigated using photoelectron holography. Angle-resolved photoemission from the Pb 5d core level shows intensity oscillations as a function of photon energy and emission angle. These constant-initial-state spectra were Fourier inverted to yield three-dimensional real-space images of the emitter's nearest neighbors, showing Pb atoms adsorbed at the T4 site. The surface structure of Pb on Ge(lll) has also been investigated using photoelectron holography. The resulting images show the emitter bonded at the T4 site. The use of the small-cone technique for data acquisition or analysis is discussed. The branching ratio, the photoemission-intensity ratio of two spin-orbit-split components, has been applied to photoelectron holography in a technique called branching-ratio photoelectron holography. This technique permits the removal of the effects of certain experimental variations in a self-normalization of the photoemission data. Angle resolved photoemission from a monolayer of Bi adsorbed on Si(lll) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations are used to form a holographic image, which shows that the Bi adatoms are arranged in a trimer structure. The concept of self-normalization was expanded to include systems without well resolved spin-orbit splitting in a technique called derivative photoelectron holography. Ratios of pairs of photoemission intensity data points, from the Bi on Si(lll) system, were integrated to deduce the underlying constant-initial-state spectra. The underlying spectra exhibit oscillations which were inverted to yield images which are compared to images generated using conventional photoelectron holography.","abstract_html":"Photoelectron holography, a technique used to determine atomic surface structure, relies on the measurement of interference in the photoelectron wave as a function of incident photon energy and/or emission direction, namely the interference between the direct path of the photoelectron to the detector and the path which scatters off neighboring atoms. This interference creates oscillations which can be directly Fourier inverted to yield three-dimensional real-space images. This thesis describes several experiments in which photoelectron holography has been used to study the atomic structure of metal adsorbates on semiconductor surfaces. The surface structure of Pb on Si(lll) has been investigated using photoelectron holography. Angle-resolved photoemission from the Pb 5d core level shows intensity oscillations as a function of photon energy and emission angle. These constant-initial-state spectra were Fourier inverted to yield three-dimensional real-space images of the emitter's nearest neighbors, showing Pb atoms adsorbed at the T4 site. The surface structure of Pb on Ge(lll) has also been investigated using photoelectron holography. The resulting images show the emitter bonded at the T4 site. The use of the small-cone technique for data acquisition or analysis is discussed. The branching ratio, the photoemission-intensity ratio of two spin-orbit-split components, has been applied to photoelectron holography in a technique called branching-ratio photoelectron holography. This technique permits the removal of the effects of certain experimental variations in a self-normalization of the photoemission data. Angle resolved photoemission from a monolayer of Bi adsorbed on Si(lll) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations are used to form a holographic image, which shows that the Bi adatoms are arranged in a trimer structure. The concept of self-normalization was expanded to include systems without well resolved spin-orbit splitting in a technique called derivative photoelectron holography. Ratios of pairs of photoemission intensity data points, from the Bi on Si(lll) system, were integrated to deduce the underlying constant-initial-state spectra. The underlying spectra exhibit oscillations which were inverted to yield images which are compared to images generated using conventional photoelectron holography.","abstract_has_math":false,"creators":["Roesler, James M."],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chiang, Tai-Chang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-04-26T19:25:36Z","date_published":"2012-04-26T19:25:36Z","updated_at":"2026-07-22T22:25:29Z","subjects":["photoelectron holography","branching-ratio photoelectron holography","metal adsorbates","semiconductor surfaces"],"languages":["en"],"rights":["© James M. Roesler, 1997"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["4038107"],"render_values":[{"text":"4038107","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/30767","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chiang, Tai-Chang"]},{"key":"dc:creator","label":"Author","values":["Roesler, James M."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-04-26T19:25:36Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["photoelectron holography","branching-ratio photoelectron holography","metal adsorbates","semiconductor surfaces"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["© James M. 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The surface structure of Pb on Si(lll) has been investigated using photoelectron holography. Angle-resolved photoemission from the Pb 5d core level shows intensity oscillations as a function of photon energy and emission angle. These constant-initial-state spectra were Fourier inverted to yield three-dimensional real-space images of the emitter's nearest neighbors, showing Pb atoms adsorbed at the T4 site. The surface structure of Pb on Ge(lll) has also been investigated using photoelectron holography. The resulting images show the emitter bonded at the T4 site. The use of the small-cone technique for data acquisition or analysis is discussed. The branching ratio, the photoemission-intensity ratio of two spin-orbit-split components, has been applied to photoelectron holography in a technique called branching-ratio photoelectron holography. This technique permits the removal of the effects of certain experimental variations in a self-normalization of the photoemission data. Angle resolved photoemission from a monolayer of Bi adsorbed on Si(lll) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations are used to form a holographic image, which shows that the Bi adatoms are arranged in a trimer structure. The concept of self-normalization was expanded to include systems without well resolved spin-orbit splitting in a technique called derivative photoelectron holography. Ratios of pairs of photoemission intensity data points, from the Bi on Si(lll) system, were integrated to deduce the underlying constant-initial-state spectra. The underlying spectra exhibit oscillations which were inverted to yield images which are compared to images generated using conventional photoelectron holography.","Submitted by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T19:25:36Z No. of bitstreams: 1 1997_roesler.pdf: 2472529 bytes, checksum: ca808e161ac1f44cd1021b68d77e7862 (MD5)","Made available in DSpace on 2012-04-26T19:25:36Z (GMT). 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This interference creates oscillations which can be directly Fourier inverted to yield three-dimensional real-space images. This thesis describes several experiments in which photoelectron holography has been used to study the atomic structure of metal adsorbates on semiconductor surfaces. The surface structure of Pb on Si(lll) has been investigated using photoelectron holography. Angle-resolved photoemission from the Pb 5d core level shows intensity oscillations as a function of photon energy and emission angle. These constant-initial-state spectra were Fourier inverted to yield three-dimensional real-space images of the emitter's nearest neighbors, showing Pb atoms adsorbed at the T4 site. The surface structure of Pb on Ge(lll) has also been investigated using photoelectron holography. The resulting images show the emitter bonded at the T4 site. The use of the small-cone technique for data acquisition or analysis is discussed. The branching ratio, the photoemission-intensity ratio of two spin-orbit-split components, has been applied to photoelectron holography in a technique called branching-ratio photoelectron holography. This technique permits the removal of the effects of certain experimental variations in a self-normalization of the photoemission data. Angle resolved photoemission from a monolayer of Bi adsorbed on Si(lll) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations are used to form a holographic image, which shows that the Bi adatoms are arranged in a trimer structure. The concept of self-normalization was expanded to include systems without well resolved spin-orbit splitting in a technique called derivative photoelectron holography. Ratios of pairs of photoemission intensity data points, from the Bi on Si(lll) system, were integrated to deduce the underlying constant-initial-state spectra. The underlying spectra exhibit oscillations which were inverted to yield images which are compared to images generated using conventional photoelectron holography.","Submitted by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T19:25:36Z No. of bitstreams: 1 1997_roesler.pdf: 2472529 bytes, checksum: ca808e161ac1f44cd1021b68d77e7862 (MD5)","Made available in DSpace on 2012-04-26T19:25:36Z (GMT). No. of bitstreams: 1 1997_roesler.pdf: 2472529 bytes, checksum: ca808e161ac1f44cd1021b68d77e7862 (MD5) Previous issue date: 1997","Restriction data tranferred 2014-07-01T11:34:28-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation/thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T19:25:36Z Item is restricted indefinitely.","dissertation/thesis","U of I Only"],"dc:identifier":["4038107","http://hdl.handle.net/2142/30767"],"dc:language":["en"],"dc:rights":["© James M. Roesler, 1997"],"dc:subject":["photoelectron holography","branching-ratio photoelectron holography","metal adsorbates","semiconductor surfaces"],"dc:title":["Photoelectron holography of metal adsorbates on semiconductor surfaces"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:29Z"}