{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/29978"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/29978","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions","abstract":"\"Tunnel junctions were fabricated oil the grown-oxides of both cleaved single-crystal silicon and evaported aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and selfenergy structure is observed, while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (resonant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the .impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. From this analysis it is found that the impurities are located predominantly near the junction interfaces and that the lead-aluminum oxide interface can be thought of as a narrow \"\"semiconductor transition region\"\" separating the metal and the oxide. The aluminum-aluminum oxide interface is adequately characterized by a shallow impurity band. The high-bias behavior of silicon junctions is qualitatively described in terms of tunneling via the previously observed trapping centers in grown silicon oxide.\"","abstract_html":""Tunnel junctions were fabricated oil the grown-oxides of both cleaved single-crystal silicon and evaported aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and selfenergy structure is observed, while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (resonant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the .impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. From this analysis it is found that the impurities are located predominantly near the junction interfaces and that the lead-aluminum oxide interface can be thought of as a narrow ""semiconductor transition region"" separating the metal and the oxide. The aluminum-aluminum oxide interface is adequately characterized by a shallow impurity band. The high-bias behavior of silicon junctions is qualitatively described in terms of tunneling via the previously observed trapping centers in grown silicon oxide."","abstract_has_math":false,"creators":["Depp, Steven Wade"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Peacock, R.N."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-03-08T22:25:25Z","date_published":"2012-03-08T22:25:25Z","updated_at":"2026-07-22T22:25:29Z","subjects":["metal-insulator-metal","metal-insulator-semiconductor","tunnel junctions"],"languages":["en"],"rights":["©1972 Depp"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["1940373"],"render_values":[{"text":"1940373","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/29978","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Peacock, R.N."]},{"key":"dc:creator","label":"Author","values":["Depp, Steven Wade"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-03-08T22:25:25Z","10000-01-01","1972"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["metal-insulator-metal","metal-insulator-semiconductor","tunnel junctions"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["©1972 Depp"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/29978","1940373"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"Tunnel junctions were fabricated oil the grown-oxides of both cleaved single-crystal silicon and evaported aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and selfenergy structure is observed, while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (resonant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the .impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. From this analysis it is found that the impurities are located predominantly near the junction interfaces and that the lead-aluminum oxide interface can be thought of as a narrow \"\"semiconductor transition region\"\" separating the metal and the oxide. The aluminum-aluminum oxide interface is adequately characterized by a shallow impurity band. The high-bias behavior of silicon junctions is qualitatively described in terms of tunneling via the previously observed trapping centers in grown silicon oxide.\"","Submitted by William Weathers (weathrs2@illinois.edu) on 2012-03-08T22:25:25Z No. of bitstreams: 1 1972_depp.pdf: 4327308 bytes, checksum: d1d5aac544dc72d140af2d6e7921dfba (MD5)","Made available in DSpace on 2012-03-08T22:25:25Z (GMT). No. of bitstreams: 1 1972_depp.pdf: 4327308 bytes, checksum: d1d5aac544dc72d140af2d6e7921dfba (MD5) Previous issue date: 1972","Restriction data tranferred 2014-07-01T11:33:01-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Weathers (weathrs2@illinois.edu) on 2012-03-08T22:25:25Z Item is restricted indefinitely.","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions"]}]}],"canonical_facts":{"dc:contributor":["Peacock, R.N."],"dc:creator":["Depp, Steven Wade"],"dc:date":["2012-03-08T22:25:25Z","10000-01-01","1972"],"dc:description":["\"Tunnel junctions were fabricated oil the grown-oxides of both cleaved single-crystal silicon and evaported aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and selfenergy structure is observed, while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (resonant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the .impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. From this analysis it is found that the impurities are located predominantly near the junction interfaces and that the lead-aluminum oxide interface can be thought of as a narrow \"\"semiconductor transition region\"\" separating the metal and the oxide. The aluminum-aluminum oxide interface is adequately characterized by a shallow impurity band. The high-bias behavior of silicon junctions is qualitatively described in terms of tunneling via the previously observed trapping centers in grown silicon oxide.\"","Submitted by William Weathers (weathrs2@illinois.edu) on 2012-03-08T22:25:25Z No. of bitstreams: 1 1972_depp.pdf: 4327308 bytes, checksum: d1d5aac544dc72d140af2d6e7921dfba (MD5)","Made available in DSpace on 2012-03-08T22:25:25Z (GMT). No. of bitstreams: 1 1972_depp.pdf: 4327308 bytes, checksum: d1d5aac544dc72d140af2d6e7921dfba (MD5) Previous issue date: 1972","Restriction data tranferred 2014-07-01T11:33:01-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Weathers (weathrs2@illinois.edu) on 2012-03-08T22:25:25Z Item is restricted indefinitely.","Thesis","U of I Only"],"dc:identifier":["http://hdl.handle.net/2142/29978","1940373"],"dc:language":["en"],"dc:rights":["©1972 Depp"],"dc:subject":["metal-insulator-metal","metal-insulator-semiconductor","tunnel junctions"],"dc:title":["High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:29Z"}