{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/29462"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/29462","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications","abstract":"The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.","abstract_html":"The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.","abstract_has_math":false,"creators":["Cheng, Kuang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Holonyak, Nick, Jr.","Hsieh, Kuang-Chien","Jin, Jianming"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-02-01T00:47:21Z","date_published":"2012-02-01T00:47:21Z","updated_at":"2026-07-22T22:25:27Z","subjects":["Heterojunction Bipolar Transistor (HBT)","Linearity","GaAsSb","Microwave Devices","Type-I DHBTs","Type-II DHBTs","Type-I/II DHBTs","Double Heterojunction Bipolar Transistor (DHBT)"],"languages":["en"],"rights":["Copyright 2011 Kuang Cheng"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/29462","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Holonyak, Nick, Jr.","Hsieh, Kuang-Chien","Jin, Jianming"]},{"key":"dc:creator","label":"Author","values":["Cheng, Kuang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-02-01T00:47:21Z","2014-02-01T11:00:28Z","2011-12"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Heterojunction Bipolar Transistor (HBT)","Linearity","GaAsSb","Microwave Devices","Type-I DHBTs","Type-II DHBTs","Type-I/II DHBTs","Double Heterojunction Bipolar Transistor (DHBT)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2011 Kuang Cheng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/29462"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-10-25T14:55:52Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5)","Made available in DSpace on 2012-02-01T00:47:21Z (GMT). No. of bitstreams: 2 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5) license.txt: 4060 bytes, checksum: 33df31fed09fb68e997dba05789cb841 (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-02-01T00:50:36Z Item is restricted until 2014-02-01T00:50:07Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:28Z Item was in collections: Graduate Theses and Dissertations at Illinois (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 2 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5) license.txt: 4060 bytes, checksum: 33df31fed09fb68e997dba05789cb841 (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:28Z"]},{"key":"dc:title","label":"Title","values":["Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton","Holonyak, Nick, Jr.","Hsieh, Kuang-Chien","Jin, Jianming"],"dc:creator":["Cheng, Kuang"],"dc:date":["2012-02-01T00:47:21Z","2014-02-01T11:00:28Z","2011-12"],"dc:description":["The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-10-25T14:55:52Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5)","Made available in DSpace on 2012-02-01T00:47:21Z (GMT). No. of bitstreams: 2 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5) license.txt: 4060 bytes, checksum: 33df31fed09fb68e997dba05789cb841 (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-02-01T00:50:36Z Item is restricted until 2014-02-01T00:50:07Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:28Z Item was in collections: Graduate Theses and Dissertations at Illinois (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 2 Cheng_Kuang-Yu.pdf: 3344482 bytes, checksum: 6fa37fb736298a825f757ba98be2fcfd (MD5) license.txt: 4060 bytes, checksum: 33df31fed09fb68e997dba05789cb841 (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:28Z"],"dc:identifier":["http://hdl.handle.net/2142/29462"],"dc:language":["en"],"dc:rights":["Copyright 2011 Kuang Cheng"],"dc:subject":["Heterojunction Bipolar Transistor (HBT)","Linearity","GaAsSb","Microwave Devices","Type-I DHBTs","Type-II DHBTs","Type-I/II DHBTs","Double Heterojunction Bipolar Transistor (DHBT)"],"dc:title":["Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:27Z"}