{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/28685"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/28685","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optical properties of GaAs coupled quantum wells and superlattices: electric and magnetic field effects","abstract":"In this thesis the effects of electric and magnetic fields on the optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in optical modulation demonstrated. Quenching and enhancement of excitonic absorption peaks is achieved at low bias fields of the order of 10 -60 kV /em for the asymmetric GaAs/ AlGaAs coupled quantum wells studied. This is interpreted in terms of energy level anti-crossing and switching between intrawell and interwell transitions. The presence of an additional magnetic field, oriented parallel to the plane of the quantum well layers, shifts the electric field at which energy level anti-crossing set in. Electric field induced enhancement of excitonic absorption peaks was also observed in the superlattice structure studied. A sharpening of the excitonic peak was seen when the inplane magnetic field was increased to 7 T and is attributed to the onset of magnetic localization. The considerable changes in the absorption spectra over moderately low external electric fields demonstrate the possibility of optical modulators consisting of coupled quantum wells and superlattice structures. A GaAs coupled quantum well reflection modulator grown on Si is demonstrated and an enhanced contrast ratio is attained by taking advantage of resonant cavity effects in conjunction with the quantum confined Stark effect.","abstract_html":"In this thesis the effects of electric and magnetic fields on the optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in optical modulation demonstrated. Quenching and enhancement of excitonic absorption peaks is achieved at low bias fields of the order of 10 -60 kV /em for the asymmetric GaAs/ AlGaAs coupled quantum wells studied. This is interpreted in terms of energy level anti-crossing and switching between intrawell and interwell transitions. The presence of an additional magnetic field, oriented parallel to the plane of the quantum well layers, shifts the electric field at which energy level anti-crossing set in. Electric field induced enhancement of excitonic absorption peaks was also observed in the superlattice structure studied. A sharpening of the excitonic peak was seen when the inplane magnetic field was increased to 7 T and is attributed to the onset of magnetic localization. The considerable changes in the absorption spectra over moderately low external electric fields demonstrate the possibility of optical modulators consisting of coupled quantum wells and superlattice structures. A GaAs coupled quantum well reflection modulator grown on Si is demonstrated and an enhanced contrast ratio is attained by taking advantage of resonant cavity effects in conjunction with the quantum confined Stark effect.","abstract_has_math":false,"creators":["Salvador, Arnel Angud"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Morkoc, Hadis"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-01-23T18:44:23Z","date_published":"2012-01-23T18:44:23Z","updated_at":"2026-07-22T22:25:27Z","subjects":["GaAs","measuring optical properties","quantum wells","superlattices","electric field","magnetic field"],"languages":["en"],"rights":["1994 Arnel Angud Salvador"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/28685","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Morkoc, Hadis"]},{"key":"dc:creator","label":"Author","values":["Salvador, Arnel Angud"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-01-23T18:44:23Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["GaAs","measuring optical properties","quantum wells","superlattices","electric field","magnetic field"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1994 Arnel Angud Salvador"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/28685"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis the effects of electric and magnetic fields on the optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in optical modulation demonstrated. Quenching and enhancement of excitonic absorption peaks is achieved at low bias fields of the order of 10 -60 kV /em for the asymmetric GaAs/ AlGaAs coupled quantum wells studied. This is interpreted in terms of energy level anti-crossing and switching between intrawell and interwell transitions. The presence of an additional magnetic field, oriented parallel to the plane of the quantum well layers, shifts the electric field at which energy level anti-crossing set in. Electric field induced enhancement of excitonic absorption peaks was also observed in the superlattice structure studied. A sharpening of the excitonic peak was seen when the inplane magnetic field was increased to 7 T and is attributed to the onset of magnetic localization. The considerable changes in the absorption spectra over moderately low external electric fields demonstrate the possibility of optical modulators consisting of coupled quantum wells and superlattice structures. A GaAs coupled quantum well reflection modulator grown on Si is demonstrated and an enhanced contrast ratio is attained by taking advantage of resonant cavity effects in conjunction with the quantum confined Stark effect.","Submitted by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-23T18:44:23Z No. of bitstreams: 1 1994_salvador.pdf: 3334214 bytes, checksum: c866361f9adc378a584af6d4639e0758 (MD5)","Made available in DSpace on 2012-01-23T18:44:23Z (GMT). No. of bitstreams: 1 1994_salvador.pdf: 3334214 bytes, checksum: c866361f9adc378a584af6d4639e0758 (MD5) Previous issue date: 1994","Restriction data tranferred 2014-07-01T11:11:32-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-23T18:44:23Z Item is restricted indefinitely.","dissertation","U of I Only"]},{"key":"dc:title","label":"Title","values":["Optical properties of GaAs coupled quantum wells and superlattices: electric and magnetic field effects"]}]}],"canonical_facts":{"dc:contributor":["Morkoc, Hadis"],"dc:creator":["Salvador, Arnel Angud"],"dc:date":["2012-01-23T18:44:23Z","10000-01-01","1994"],"dc:description":["In this thesis the effects of electric and magnetic fields on the optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in optical modulation demonstrated. Quenching and enhancement of excitonic absorption peaks is achieved at low bias fields of the order of 10 -60 kV /em for the asymmetric GaAs/ AlGaAs coupled quantum wells studied. This is interpreted in terms of energy level anti-crossing and switching between intrawell and interwell transitions. The presence of an additional magnetic field, oriented parallel to the plane of the quantum well layers, shifts the electric field at which energy level anti-crossing set in. Electric field induced enhancement of excitonic absorption peaks was also observed in the superlattice structure studied. A sharpening of the excitonic peak was seen when the inplane magnetic field was increased to 7 T and is attributed to the onset of magnetic localization. The considerable changes in the absorption spectra over moderately low external electric fields demonstrate the possibility of optical modulators consisting of coupled quantum wells and superlattice structures. A GaAs coupled quantum well reflection modulator grown on Si is demonstrated and an enhanced contrast ratio is attained by taking advantage of resonant cavity effects in conjunction with the quantum confined Stark effect.","Submitted by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-23T18:44:23Z No. of bitstreams: 1 1994_salvador.pdf: 3334214 bytes, checksum: c866361f9adc378a584af6d4639e0758 (MD5)","Made available in DSpace on 2012-01-23T18:44:23Z (GMT). No. of bitstreams: 1 1994_salvador.pdf: 3334214 bytes, checksum: c866361f9adc378a584af6d4639e0758 (MD5) Previous issue date: 1994","Restriction data tranferred 2014-07-01T11:11:32-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-23T18:44:23Z Item is restricted indefinitely.","dissertation","U of I Only"],"dc:identifier":["http://hdl.handle.net/2142/28685"],"dc:language":["en"],"dc:rights":["1994 Arnel Angud Salvador"],"dc:subject":["GaAs","measuring optical properties","quantum wells","superlattices","electric field","magnetic field"],"dc:title":["Optical properties of GaAs coupled quantum wells and superlattices: electric and magnetic field effects"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:27Z"}