{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/28657"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/28657","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers","abstract":"\"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick \"\"sealing\"\" oxidation prevents destructive hydrolyzation. Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface. Data are presented on ten-stripe AlxGa1_xAs-GaAs-InYGa1_YAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al20 3 polishing compound or 10-f..lm diameter AI powder results in increased current threshold and spatial and spectral broadening.\"","abstract_html":"&quot;Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick &quot;&quot;sealing&quot;&quot; oxidation prevents destructive hydrolyzation. Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface. Data are presented on ten-stripe AlxGa1_xAs-GaAs-InYGa1_YAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al20 3 polishing compound or 10-f..lm diameter AI powder results in increased current threshold and spatial and spectral broadening.&quot;","abstract_has_math":false,"creators":["Kellogg, David Andrew"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2001,"date_issued":"2001","date_published":"2001","updated_at":"2026-07-22T22:25:27Z","subjects":["AlGaAs-GaAs-InGaAs","lasers"],"languages":["en"],"rights":["2001 David Andrew Kellogg"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/28657","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Kellogg, David Andrew"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2001","2012-01-19T22:22:34Z","10000-01-01"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["AlGaAs-GaAs-InGaAs","lasers"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["2001 David Andrew Kellogg"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/28657"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick \"\"sealing\"\" oxidation prevents destructive hydrolyzation. Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface. Data are presented on ten-stripe AlxGa1_xAs-GaAs-InYGa1_YAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al20 3 polishing compound or 10-f..lm diameter AI powder results in increased current threshold and spatial and spectral broadening.\"","Submitted by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-19T22:22:34Z No. of bitstreams: 1 2001_kellogg.pdf: 3139274 bytes, checksum: 53ad39c4645dca2e2778a869efc556de (MD5)","Made available in DSpace on 2012-01-19T22:22:34Z (GMT). No. of bitstreams: 1 2001_kellogg.pdf: 3139274 bytes, checksum: 53ad39c4645dca2e2778a869efc556de (MD5) Previous issue date: 2001","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-19T22:22:34Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:10:13-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation","dissertation","U of I Only"]},{"key":"dc:title","label":"Title","values":["Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers"]}]}],"canonical_facts":{"dc:creator":["Kellogg, David Andrew"],"dc:date":["2001","2012-01-19T22:22:34Z","10000-01-01"],"dc:description":["\"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick \"\"sealing\"\" oxidation prevents destructive hydrolyzation. Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface. Data are presented on ten-stripe AlxGa1_xAs-GaAs-InYGa1_YAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al20 3 polishing compound or 10-f..lm diameter AI powder results in increased current threshold and spatial and spectral broadening.\"","Submitted by Carolyn Rauber (crauber2@illinois.edu) on 2012-01-19T22:22:34Z No. of bitstreams: 1 2001_kellogg.pdf: 3139274 bytes, checksum: 53ad39c4645dca2e2778a869efc556de (MD5)","Made available in DSpace on 2012-01-19T22:22:34Z (GMT). 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