{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/26349"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/26349","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates","abstract":"The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.","abstract_html":"The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.","abstract_has_math":false,"creators":["Zuo, Daniel Y."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Chuang, Shun-Lien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-08-26T15:24:26Z","date_published":"2011-08-26T15:24:26Z","updated_at":"2026-07-22T22:25:26Z","subjects":["Infrared detectors","Type-II Superlattice","Photodiode","InAs substrate","electron beam induced current (EBIC)"],"languages":["en"],"rights":["Copyright 2011 Daniel Y. 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The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-07-16T16:05:18Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Masters Thesis.zip: 10489811 bytes, checksum: 33f143169517c6e6895eeb76444d9325 (MD5) Zuo_Daniel.pdf: 2715636 bytes, checksum: 65802087b6596e1de9f43183f29e7f57 (MD5)","Made available in DSpace on 2011-08-26T15:24:26Z (GMT). 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