{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25717"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25717","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"The effect of high pressure on S and Te-doped GaAs1-xPx","abstract":"The pressure dependence of the electrical resistivity of n-type GaAs l -x Px is measured to a pressure of 7 kilobars at temperatures of 770, 195 0 , and 300 0 K. The samples are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as four orders of magnitude are observed at 77 0K for samples in the composition range 0.30 ~ x ~ 0.4~ The behavior of the samples is consistent with a model in which the higher lying [lOOJ conduction band edge has associated with it a donor level which is deep with respect to the [lOOJ minima. The level depth with respect to these minima is found to be 0.03 eV for Te-doped crystals, and ~ 0.06 eV for S-doped crystals. The S-doped samples also exhibit a light-sensitive, longlifetime trapping behavior. The trapping appears to be associated with an additional deep level which moves away from the [OOOJ conduction band minimum at the ratJ of approximately 10.8 x 10-3 eV/kbar. The data indicate that this trapping level is probably a second split-off level associated with and - 0.16 eV below the The mobility ratio of the two bands [equation] is found to be 15-30 at 3000K and 1950K but is found to increase to 60-100 at 77 0 K. The phosphorus concentration x at which the [OOOJ and [lOOJ minima are equal in energy appears to be x ~ 0.43 at 77 0K and x ~ 0.45 at 3000 K, implying that the separation between the minima increases with temperature at the rate of ~ 6 x 10-5 eV/oK. It is verified by combining resistance vs. pressure curves for samples of different composition x that increasing the pressure and increasing x have a similar effect on the band structure of the GaAs1-xPx system.","abstract_html":"The pressure dependence of the electrical resistivity of n-type GaAs l -x Px is measured to a pressure of 7 kilobars at temperatures of 770, 195 0 , and 300 0 K. The samples are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as four orders of magnitude are observed at 77 0K for samples in the composition range 0.30 ~ x ~ 0.4~ The behavior of the samples is consistent with a model in which the higher lying [lOOJ conduction band edge has associated with it a donor level which is deep with respect to the [lOOJ minima. The level depth with respect to these minima is found to be 0.03 eV for Te-doped crystals, and ~ 0.06 eV for S-doped crystals. The S-doped samples also exhibit a light-sensitive, longlifetime trapping behavior. The trapping appears to be associated with an additional deep level which moves away from the [OOOJ conduction band minimum at the ratJ of approximately 10.8 x 10-3 eV/kbar. The data indicate that this trapping level is probably a second split-off level associated with and - 0.16 eV below the The mobility ratio of the two bands [equation] is found to be 15-30 at 3000K and 1950K but is found to increase to 60-100 at 77 0 K. The phosphorus concentration x at which the [OOOJ and [lOOJ minima are equal in energy appears to be x ~ 0.43 at 77 0K and x ~ 0.45 at 3000 K, implying that the separation between the minima increases with temperature at the rate of ~ 6 x 10-5 eV/oK. It is verified by combining resistance vs. pressure curves for samples of different composition x that increasing the pressure and increasing x have a similar effect on the band structure of the GaAs1-xPx system.","abstract_has_math":false,"creators":["Craford, Magnus George"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Lazarus, David"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07-08T16:02:36Z","date_published":"2011-07-08T16:02:36Z","updated_at":"2026-07-22T22:25:26Z","subjects":["electrical resistivity","n-doped","s-doped"],"languages":["en"],"rights":["1967 Magnus George Craford"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["2609778"],"render_values":[{"text":"2609778","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25717","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lazarus, David"]},{"key":"dc:creator","label":"Author","values":["Craford, Magnus George"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-07-08T16:02:36Z","10000-01-01","1967"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electrical resistivity","n-doped","s-doped"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1967 Magnus George Craford"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["2609778","http://hdl.handle.net/2142/25717"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The pressure dependence of the electrical resistivity of n-type GaAs l -x Px is measured to a pressure of 7 kilobars at temperatures of 770, 195 0 , and 300 0 K. The samples are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as four orders of magnitude are observed at 77 0K for samples in the composition range 0.30 ~ x ~ 0.4~ The behavior of the samples is consistent with a model in which the higher lying [lOOJ conduction band edge has associated with it a donor level which is deep with respect to the [lOOJ minima. The level depth with respect to these minima is found to be 0.03 eV for Te-doped crystals, and ~ 0.06 eV for S-doped crystals. The S-doped samples also exhibit a light-sensitive, longlifetime trapping behavior. The trapping appears to be associated with an additional deep level which moves away from the [OOOJ conduction band minimum at the ratJ of approximately 10.8 x 10-3 eV/kbar. The data indicate that this trapping level is probably a second split-off level associated with and - 0.16 eV below the The mobility ratio of the two bands [equation] is found to be 15-30 at 3000K and 1950K but is found to increase to 60-100 at 77 0 K. The phosphorus concentration x at which the [OOOJ and [lOOJ minima are equal in energy appears to be x ~ 0.43 at 77 0K and x ~ 0.45 at 3000 K, implying that the separation between the minima increases with temperature at the rate of ~ 6 x 10-5 eV/oK. It is verified by combining resistance vs. pressure curves for samples of different composition x that increasing the pressure and increasing x have a similar effect on the band structure of the GaAs1-xPx system.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-08T16:02:36Z No. of bitstreams: 1 1967_craford.pdf: 2953349 bytes, checksum: 7fa3ec4a7313910817be55b9fe022341 (MD5)","Made available in DSpace on 2011-07-08T16:02:36Z (GMT). No. of bitstreams: 1 1967_craford.pdf: 2953349 bytes, checksum: 7fa3ec4a7313910817be55b9fe022341 (MD5) Previous issue date: 1967","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-08T16:02:36Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:32:46-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["The effect of high pressure on S and Te-doped GaAs1-xPx"]}]}],"canonical_facts":{"dc:contributor":["Lazarus, David"],"dc:creator":["Craford, Magnus George"],"dc:date":["2011-07-08T16:02:36Z","10000-01-01","1967"],"dc:description":["The pressure dependence of the electrical resistivity of n-type GaAs l -x Px is measured to a pressure of 7 kilobars at temperatures of 770, 195 0 , and 300 0 K. The samples are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as four orders of magnitude are observed at 77 0K for samples in the composition range 0.30 ~ x ~ 0.4~ The behavior of the samples is consistent with a model in which the higher lying [lOOJ conduction band edge has associated with it a donor level which is deep with respect to the [lOOJ minima. The level depth with respect to these minima is found to be 0.03 eV for Te-doped crystals, and ~ 0.06 eV for S-doped crystals. The S-doped samples also exhibit a light-sensitive, longlifetime trapping behavior. The trapping appears to be associated with an additional deep level which moves away from the [OOOJ conduction band minimum at the ratJ of approximately 10.8 x 10-3 eV/kbar. The data indicate that this trapping level is probably a second split-off level associated with and - 0.16 eV below the The mobility ratio of the two bands [equation] is found to be 15-30 at 3000K and 1950K but is found to increase to 60-100 at 77 0 K. The phosphorus concentration x at which the [OOOJ and [lOOJ minima are equal in energy appears to be x ~ 0.43 at 77 0K and x ~ 0.45 at 3000 K, implying that the separation between the minima increases with temperature at the rate of ~ 6 x 10-5 eV/oK. It is verified by combining resistance vs. pressure curves for samples of different composition x that increasing the pressure and increasing x have a similar effect on the band structure of the GaAs1-xPx system.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-08T16:02:36Z No. of bitstreams: 1 1967_craford.pdf: 2953349 bytes, checksum: 7fa3ec4a7313910817be55b9fe022341 (MD5)","Made available in DSpace on 2011-07-08T16:02:36Z (GMT). No. of bitstreams: 1 1967_craford.pdf: 2953349 bytes, checksum: 7fa3ec4a7313910817be55b9fe022341 (MD5) Previous issue date: 1967","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-08T16:02:36Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:32:46-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"],"dc:identifier":["2609778","http://hdl.handle.net/2142/25717"],"dc:language":["en"],"dc:rights":["1967 Magnus George Craford"],"dc:subject":["electrical resistivity","n-doped","s-doped"],"dc:title":["The effect of high pressure on S and Te-doped GaAs1-xPx"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:26Z"}