{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25689"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25689","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"\"Some properties of silicon p-\"\"i\"\"-n diodes compensated with gold\"","abstract":"\"The electrical and optical properties of gold-doped silicon p--\"\"i\"\"-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in many cases is very nearly proportional to the cube of the applied, voltage. At still higher injection levels the current develops an oscillatory component whose frequency can vary between 5 and 100 MHz depending on the gold concentration in the \"\"i\"\" region of the devices. From illumination of the devices with light of various energies it has been established that .the gold acceptor deep-level is the only level which plays a role in the dc and the ac behavior of the devices. A theory based on two carrier space-charge-limited emission into the \"\"intrinsic\"\" region of the devices i~ developed to explain the cubic dependence of the current density on applied voltage. This theory is in excellent agreement with experimental results. Properties and parameters of the. current. oscillations are discussed. These oscillations cannot be explained on the basis of a travelling space-charge wave model since the frequency of oscillation decreases with increasing applied voltage, and the frequency at threshold is independent of the length of the \"\"i\"\" region. A simple space-charge fluctuation model which is in good agreement with experimental results is developed to explain the observed oscillations.\"","abstract_html":""The electrical and optical properties of gold-doped silicon p--""i""-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in many cases is very nearly proportional to the cube of the applied, voltage. At still higher injection levels the current develops an oscillatory component whose frequency can vary between 5 and 100 MHz depending on the gold concentration in the ""i"" region of the devices. From illumination of the devices with light of various energies it has been established that .the gold acceptor deep-level is the only level which plays a role in the dc and the ac behavior of the devices. A theory based on two carrier space-charge-limited emission into the ""intrinsic"" region of the devices i~ developed to explain the cubic dependence of the current density on applied voltage. This theory is in excellent agreement with experimental results. Properties and parameters of the. current. oscillations are discussed. These oscillations cannot be explained on the basis of a travelling space-charge wave model since the frequency of oscillation decreases with increasing applied voltage, and the frequency at threshold is independent of the length of the ""i"" region. A simple space-charge fluctuation model which is in good agreement with experimental results is developed to explain the observed oscillations."","abstract_has_math":false,"creators":["Moore, John Sylvester"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07-07T15:34:52Z","date_published":"2011-07-07T15:34:52Z","updated_at":"2026-07-22T22:25:26Z","subjects":["\"silicon p-\"\"i\"\"-n diodes\"","gold-doped silicon diodes","Ohm's law"],"languages":["en"],"rights":["1967 John Sylvester Moore"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["6105133"],"render_values":[{"text":"6105133","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25689","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Moore, John Sylvester"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-07-07T15:34:52Z","10000-01-01","1967"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["\"silicon p-\"\"i\"\"-n diodes\"","gold-doped silicon diodes","Ohm's law"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1967 John Sylvester Moore"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["6105133","http://hdl.handle.net/2142/25689"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"The electrical and optical properties of gold-doped silicon p--\"\"i\"\"-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in many cases is very nearly proportional to the cube of the applied, voltage. At still higher injection levels the current develops an oscillatory component whose frequency can vary between 5 and 100 MHz depending on the gold concentration in the \"\"i\"\" region of the devices. From illumination of the devices with light of various energies it has been established that .the gold acceptor deep-level is the only level which plays a role in the dc and the ac behavior of the devices. A theory based on two carrier space-charge-limited emission into the \"\"intrinsic\"\" region of the devices i~ developed to explain the cubic dependence of the current density on applied voltage. This theory is in excellent agreement with experimental results. Properties and parameters of the. current. oscillations are discussed. These oscillations cannot be explained on the basis of a travelling space-charge wave model since the frequency of oscillation decreases with increasing applied voltage, and the frequency at threshold is independent of the length of the \"\"i\"\" region. A simple space-charge fluctuation model which is in good agreement with experimental results is developed to explain the observed oscillations.\"","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-07T15:34:52Z No. of bitstreams: 1 1967_moore.pdf: 2460228 bytes, checksum: 329e36a65bf669045a18a688117a3b73 (MD5)","Made available in DSpace on 2011-07-07T15:34:52Z (GMT). No. of bitstreams: 1 1967_moore.pdf: 2460228 bytes, checksum: 329e36a65bf669045a18a688117a3b73 (MD5) Previous issue date: 1967","Restriction data tranferred 2014-07-01T11:32:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-07T15:34:52Z Item is restricted indefinitely.","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["\"Some properties of silicon p-\"\"i\"\"-n diodes compensated with gold\""]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Moore, John Sylvester"],"dc:date":["2011-07-07T15:34:52Z","10000-01-01","1967"],"dc:description":["\"The electrical and optical properties of gold-doped silicon p--\"\"i\"\"-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in many cases is very nearly proportional to the cube of the applied, voltage. At still higher injection levels the current develops an oscillatory component whose frequency can vary between 5 and 100 MHz depending on the gold concentration in the \"\"i\"\" region of the devices. From illumination of the devices with light of various energies it has been established that .the gold acceptor deep-level is the only level which plays a role in the dc and the ac behavior of the devices. A theory based on two carrier space-charge-limited emission into the \"\"intrinsic\"\" region of the devices i~ developed to explain the cubic dependence of the current density on applied voltage. This theory is in excellent agreement with experimental results. Properties and parameters of the. current. oscillations are discussed. These oscillations cannot be explained on the basis of a travelling space-charge wave model since the frequency of oscillation decreases with increasing applied voltage, and the frequency at threshold is independent of the length of the \"\"i\"\" region. A simple space-charge fluctuation model which is in good agreement with experimental results is developed to explain the observed oscillations.\"","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-07T15:34:52Z No. of bitstreams: 1 1967_moore.pdf: 2460228 bytes, checksum: 329e36a65bf669045a18a688117a3b73 (MD5)","Made available in DSpace on 2011-07-07T15:34:52Z (GMT). No. of bitstreams: 1 1967_moore.pdf: 2460228 bytes, checksum: 329e36a65bf669045a18a688117a3b73 (MD5) Previous issue date: 1967","Restriction data tranferred 2014-07-01T11:32:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-07T15:34:52Z Item is restricted indefinitely.","Thesis","U of I Only"],"dc:identifier":["6105133","http://hdl.handle.net/2142/25689"],"dc:language":["en"],"dc:rights":["1967 John Sylvester Moore"],"dc:subject":["\"silicon p-\"\"i\"\"-n diodes\"","gold-doped silicon diodes","Ohm's law"],"dc:title":["\"Some properties of silicon p-\"\"i\"\"-n diodes compensated with gold\""],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:26Z"}