{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25610"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25610","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Study of electron mobility and scattering in weak surface inversion layer on silicon","abstract":"Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z Item is restricted indefinitely.","abstract_html":"Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z Item is restricted indefinitely.","abstract_has_math":false,"creators":["Shiue, Chyan-Chang"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Sah, C.T."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07-01T14:42:40Z","date_published":"2011-07-01T14:42:40Z","updated_at":"2026-07-22T22:25:24Z","subjects":["electron mobility","electron scattering","weak surface inversion layer","silicon","equivalent circuit","semiconductor surface","conductance threshold"],"languages":["en"],"rights":["1977 Chyan-Chang Shiue"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["311472"],"render_values":[{"text":"311472","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25610","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Sah, C.T."]},{"key":"dc:creator","label":"Author","values":["Shiue, Chyan-Chang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-07-01T14:42:40Z","10000-01-01","1977"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electron mobility","electron scattering","weak surface inversion layer","silicon","equivalent circuit","semiconductor surface","conductance threshold"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1977 Chyan-Chang Shiue"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["311472","http://hdl.handle.net/2142/25610"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z Item is restricted indefinitely.","A new experimental technique, using the equivalent circuit of semiconductor surface, has been used to study the electron mobility in the surface inversion layer near the conductance threshold. This method enables us to measure very low inversion electron concentration (~10^8 e1ectrons/cm2 ) not possible previously. From the accurate electron concentration, the conductivity mobility near conduction threshold was computed. Conventional conductance measurement has also been performed to measure the conductivity mobility above threshold. The results obtained from both methods are consistent. A monotonic mobility decrease at extremely weak inversion has been observed in two samples with oxide charge density of 1.12 x lO^11 and 1.17 X l0^12cm-2 respectively. This is in contrast to previous data, showing a mobility peak near threshold. The classical model using scattering by the random Coulomb potentia1 has been used to interpret the mobility drop. The decrease of experimental mobility in extremely weak inversion was correlated to the inversion electron and oxide charge densities by means of the standard deviation of gaussian distribution of the random impurity potentials in this crude model. The present model fits the mobility variation qualitatively but not in quantitative detail. A new scattering model based on a high density of dipole potentials from process induced ~Si-OH bonds near the interface of semiconductor was proposed to explain the discrepancy. Some other factors which may make up the discrepancy were also suggested.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z No. of bitstreams: 1 1977_shiue.pdf: 2574680 bytes, checksum: ebc94cdf177c01a7ad7ea1b1f768e62a (MD5)","Made available in DSpace on 2011-07-01T14:42:40Z (GMT). No. of bitstreams: 1 1977_shiue.pdf: 2574680 bytes, checksum: ebc94cdf177c01a7ad7ea1b1f768e62a (MD5) Previous issue date: 1977","Restriction data tranferred 2014-07-01T11:32:31-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Study of electron mobility and scattering in weak surface inversion layer on silicon"]}]}],"canonical_facts":{"dc:contributor":["Sah, C.T."],"dc:creator":["Shiue, Chyan-Chang"],"dc:date":["2011-07-01T14:42:40Z","10000-01-01","1977"],"dc:description":["Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z Item is restricted indefinitely.","A new experimental technique, using the equivalent circuit of semiconductor surface, has been used to study the electron mobility in the surface inversion layer near the conductance threshold. This method enables us to measure very low inversion electron concentration (~10^8 e1ectrons/cm2 ) not possible previously. From the accurate electron concentration, the conductivity mobility near conduction threshold was computed. Conventional conductance measurement has also been performed to measure the conductivity mobility above threshold. The results obtained from both methods are consistent. A monotonic mobility decrease at extremely weak inversion has been observed in two samples with oxide charge density of 1.12 x lO^11 and 1.17 X l0^12cm-2 respectively. This is in contrast to previous data, showing a mobility peak near threshold. The classical model using scattering by the random Coulomb potentia1 has been used to interpret the mobility drop. The decrease of experimental mobility in extremely weak inversion was correlated to the inversion electron and oxide charge densities by means of the standard deviation of gaussian distribution of the random impurity potentials in this crude model. The present model fits the mobility variation qualitatively but not in quantitative detail. A new scattering model based on a high density of dipole potentials from process induced ~Si-OH bonds near the interface of semiconductor was proposed to explain the discrepancy. Some other factors which may make up the discrepancy were also suggested.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:42:40Z No. of bitstreams: 1 1977_shiue.pdf: 2574680 bytes, checksum: ebc94cdf177c01a7ad7ea1b1f768e62a (MD5)","Made available in DSpace on 2011-07-01T14:42:40Z (GMT). No. of bitstreams: 1 1977_shiue.pdf: 2574680 bytes, checksum: ebc94cdf177c01a7ad7ea1b1f768e62a (MD5) Previous issue date: 1977","Restriction data tranferred 2014-07-01T11:32:31-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"],"dc:identifier":["311472","http://hdl.handle.net/2142/25610"],"dc:language":["en"],"dc:rights":["1977 Chyan-Chang Shiue"],"dc:subject":["electron mobility","electron scattering","weak surface inversion layer","silicon","equivalent circuit","semiconductor surface","conductance threshold"],"dc:title":["Study of electron mobility and scattering in weak surface inversion layer on silicon"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:24Z"}