{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25548"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25548","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Luminescence characteristics of single and multiple aluminum gallium arsenide-gallium arsenide quantum-well heterostructure lasers","abstract":"The luminescence properties of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active region. The experimental characteristics of quantum-well recombination radiation are presented and are explained in terms of the properties of quantized carrier motion. Photopumped single quantum-well A1x Gal-x As-GaAs-A1x Gal-x As (x-O. 6, Lz=well width -200 A) heterostructures are shown to operate (77°K) on z confined-particle transitions from the infrared to the red (6885 A, ~A-1300 A, Delta E=hw-E -293 meV). Two fundamental limitations of single quantum-well A1GaAs-GaAs heterostructures are identified. The first is concerned with the highest energy emission obtainable, and is related to the position of the L indirect minima in GaAs. The location of the first indirect conduction band minima (L minima) is determined by a luminescence (emission) technique and is found to be -294 meV above the r band edge at 4.3°K. The second limitation involves the loss of luminescence efficiency as the well thickness Lz approaches the carrier scattering path length lp, where lp -63 A is the electron scattering length with longitudinal optical (LO) phonons. In addition, the band discontinuities between AIGaAs and GaAs are measured by a technique based on the recombination of free electrons in the AIGaAs with bound 'holes in the GaAs well. The carrier collection problem associated with a small single well can be overcome by coupling several thin GaAs quantum layers via thin A1GaAs barriers so as to form a composite active region considerably larger than the scattering length t. These multiple-well structures operate as p lasers continuously at room temperature (CW 3000 K) at energies as high as 145 meV above the GaAs r band edge (hw-Eg -0-145 meV). In addition, data showing CW 3000 K laser operation at photoexcitation threshold levels 2 2 (900W/cm2 , Jth ~375A/cm2 ) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures are presented. The origin of quantum-well recombination radiation below the lowest allowed confined-particle transition is discussed and is identified as phonon-assisted recombination. Phonon-sideband laser data (4.3-3000 K) are presented showing emission at 36, 72, and 108 meV (integer multiples of E-36 meV) below the lowest confined-particle transition. Phonon involvement is also shown to occur throughout the entire direct-gap range of these quantum-well heterostructures. In addition, data are presented indicating that the electron-phonon interaction is enhanced as the number of coupled quantum wells in the active region is increased. A qualitative analysis and discussion of the observed electron-phonon interaction is presented. The origin of this interaction is related to the two-dimensional nature of these structures, and the analysis suggests that stimulated phonon emission is possible in the quantum-well heterostructures of this work.","abstract_html":"The luminescence properties of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active region. The experimental characteristics of quantum-well recombination radiation are presented and are explained in terms of the properties of quantized carrier motion. Photopumped single quantum-well A1x Gal-x As-GaAs-A1x Gal-x As (x-O. 6, Lz=well width -200 A) heterostructures are shown to operate (77°K) on z confined-particle transitions from the infrared to the red (6885 A, ~A-1300 A, Delta E=hw-E -293 meV). Two fundamental limitations of single quantum-well A1GaAs-GaAs heterostructures are identified. The first is concerned with the highest energy emission obtainable, and is related to the position of the L indirect minima in GaAs. The location of the first indirect conduction band minima (L minima) is determined by a luminescence (emission) technique and is found to be -294 meV above the r band edge at 4.3°K. The second limitation involves the loss of luminescence efficiency as the well thickness Lz approaches the carrier scattering path length lp, where lp -63 A is the electron scattering length with longitudinal optical (LO) phonons. In addition, the band discontinuities between AIGaAs and GaAs are measured by a technique based on the recombination of free electrons in the AIGaAs with bound 'holes in the GaAs well. The carrier collection problem associated with a small single well can be overcome by coupling several thin GaAs quantum layers via thin A1GaAs barriers so as to form a composite active region considerably larger than the scattering length t. These multiple-well structures operate as p lasers continuously at room temperature (CW 3000 K) at energies as high as 145 meV above the GaAs r band edge (hw-Eg -0-145 meV). In addition, data showing CW 3000 K laser operation at photoexcitation threshold levels 2 2 (900W/cm2 , Jth ~375A/cm2 ) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures are presented. The origin of quantum-well recombination radiation below the lowest allowed confined-particle transition is discussed and is identified as phonon-assisted recombination. Phonon-sideband laser data (4.3-3000 K) are presented showing emission at 36, 72, and 108 meV (integer multiples of E-36 meV) below the lowest confined-particle transition. Phonon involvement is also shown to occur throughout the entire direct-gap range of these quantum-well heterostructures. In addition, data are presented indicating that the electron-phonon interaction is enhanced as the number of coupled quantum wells in the active region is increased. A qualitative analysis and discussion of the observed electron-phonon interaction is presented. The origin of this interaction is related to the two-dimensional nature of these structures, and the analysis suggests that stimulated phonon emission is possible in the quantum-well heterostructures of this work.","abstract_has_math":false,"creators":["Kolbas, Robert Michael"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-28T15:34:27Z","date_published":"2011-06-28T15:34:27Z","updated_at":"2026-07-22T22:25:24Z","subjects":["luminescence","aluminum gallium arsenide-gallium arsenide","quantum-well heterostructure lasers","metalorganic chemical vapor deposition"],"languages":["en"],"rights":["1979 Robert Michael Kolbas"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["397484"],"render_values":[{"text":"397484","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25548","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Kolbas, Robert Michael"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-28T15:34:27Z","10000-01-01","1979"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["luminescence","aluminum gallium arsenide-gallium arsenide","quantum-well heterostructure lasers","metalorganic chemical vapor deposition"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1979 Robert Michael Kolbas"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["397484","http://hdl.handle.net/2142/25548"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The luminescence properties of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active region. The experimental characteristics of quantum-well recombination radiation are presented and are explained in terms of the properties of quantized carrier motion. Photopumped single quantum-well A1x Gal-x As-GaAs-A1x Gal-x As (x-O. 6, Lz=well width -200 A) heterostructures are shown to operate (77°K) on z confined-particle transitions from the infrared to the red (6885 A, ~A-1300 A, Delta E=hw-E -293 meV). Two fundamental limitations of single quantum-well A1GaAs-GaAs heterostructures are identified. The first is concerned with the highest energy emission obtainable, and is related to the position of the L indirect minima in GaAs. The location of the first indirect conduction band minima (L minima) is determined by a luminescence (emission) technique and is found to be -294 meV above the r band edge at 4.3°K. The second limitation involves the loss of luminescence efficiency as the well thickness Lz approaches the carrier scattering path length lp, where lp -63 A is the electron scattering length with longitudinal optical (LO) phonons. In addition, the band discontinuities between AIGaAs and GaAs are measured by a technique based on the recombination of free electrons in the AIGaAs with bound 'holes in the GaAs well. The carrier collection problem associated with a small single well can be overcome by coupling several thin GaAs quantum layers via thin A1GaAs barriers so as to form a composite active region considerably larger than the scattering length t. These multiple-well structures operate as p lasers continuously at room temperature (CW 3000 K) at energies as high as 145 meV above the GaAs r band edge (hw-Eg -0-145 meV). In addition, data showing CW 3000 K laser operation at photoexcitation threshold levels 2 2 (900W/cm2 , Jth ~375A/cm2 ) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures are presented. The origin of quantum-well recombination radiation below the lowest allowed confined-particle transition is discussed and is identified as phonon-assisted recombination. Phonon-sideband laser data (4.3-3000 K) are presented showing emission at 36, 72, and 108 meV (integer multiples of E-36 meV) below the lowest confined-particle transition. Phonon involvement is also shown to occur throughout the entire direct-gap range of these quantum-well heterostructures. In addition, data are presented indicating that the electron-phonon interaction is enhanced as the number of coupled quantum wells in the active region is increased. A qualitative analysis and discussion of the observed electron-phonon interaction is presented. The origin of this interaction is related to the two-dimensional nature of these structures, and the analysis suggests that stimulated phonon emission is possible in the quantum-well heterostructures of this work.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-28T15:34:27Z No. of bitstreams: 1 1979_kolbas.pdf: 4356096 bytes, checksum: 36aa5214638bd5f97b4d0810d7035e09 (MD5)","Made available in DSpace on 2011-06-28T15:34:27Z (GMT). No. of bitstreams: 1 1979_kolbas.pdf: 4356096 bytes, checksum: 36aa5214638bd5f97b4d0810d7035e09 (MD5) Previous issue date: 1979","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-28T15:34:27Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:32:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Luminescence characteristics of single and multiple aluminum gallium arsenide-gallium arsenide quantum-well heterostructure lasers"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Kolbas, Robert Michael"],"dc:date":["2011-06-28T15:34:27Z","10000-01-01","1979"],"dc:description":["The luminescence properties of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active region. The experimental characteristics of quantum-well recombination radiation are presented and are explained in terms of the properties of quantized carrier motion. Photopumped single quantum-well A1x Gal-x As-GaAs-A1x Gal-x As (x-O. 6, Lz=well width -200 A) heterostructures are shown to operate (77°K) on z confined-particle transitions from the infrared to the red (6885 A, ~A-1300 A, Delta E=hw-E -293 meV). Two fundamental limitations of single quantum-well A1GaAs-GaAs heterostructures are identified. The first is concerned with the highest energy emission obtainable, and is related to the position of the L indirect minima in GaAs. The location of the first indirect conduction band minima (L minima) is determined by a luminescence (emission) technique and is found to be -294 meV above the r band edge at 4.3°K. The second limitation involves the loss of luminescence efficiency as the well thickness Lz approaches the carrier scattering path length lp, where lp -63 A is the electron scattering length with longitudinal optical (LO) phonons. In addition, the band discontinuities between AIGaAs and GaAs are measured by a technique based on the recombination of free electrons in the AIGaAs with bound 'holes in the GaAs well. The carrier collection problem associated with a small single well can be overcome by coupling several thin GaAs quantum layers via thin A1GaAs barriers so as to form a composite active region considerably larger than the scattering length t. These multiple-well structures operate as p lasers continuously at room temperature (CW 3000 K) at energies as high as 145 meV above the GaAs r band edge (hw-Eg -0-145 meV). In addition, data showing CW 3000 K laser operation at photoexcitation threshold levels 2 2 (900W/cm2 , Jth ~375A/cm2 ) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures are presented. The origin of quantum-well recombination radiation below the lowest allowed confined-particle transition is discussed and is identified as phonon-assisted recombination. Phonon-sideband laser data (4.3-3000 K) are presented showing emission at 36, 72, and 108 meV (integer multiples of E-36 meV) below the lowest confined-particle transition. Phonon involvement is also shown to occur throughout the entire direct-gap range of these quantum-well heterostructures. In addition, data are presented indicating that the electron-phonon interaction is enhanced as the number of coupled quantum wells in the active region is increased. A qualitative analysis and discussion of the observed electron-phonon interaction is presented. The origin of this interaction is related to the two-dimensional nature of these structures, and the analysis suggests that stimulated phonon emission is possible in the quantum-well heterostructures of this work.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-28T15:34:27Z No. of bitstreams: 1 1979_kolbas.pdf: 4356096 bytes, checksum: 36aa5214638bd5f97b4d0810d7035e09 (MD5)","Made available in DSpace on 2011-06-28T15:34:27Z (GMT). No. of bitstreams: 1 1979_kolbas.pdf: 4356096 bytes, checksum: 36aa5214638bd5f97b4d0810d7035e09 (MD5) Previous issue date: 1979","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-28T15:34:27Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:32:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"],"dc:identifier":["397484","http://hdl.handle.net/2142/25548"],"dc:language":["en"],"dc:rights":["1979 Robert Michael Kolbas"],"dc:subject":["luminescence","aluminum gallium arsenide-gallium arsenide","quantum-well heterostructure lasers","metalorganic chemical vapor deposition"],"dc:title":["Luminescence characteristics of single and multiple aluminum gallium arsenide-gallium arsenide quantum-well heterostructure lasers"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:24Z"}