{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25294"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25294","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy","abstract":"A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.","abstract_html":"A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.","abstract_has_math":false,"creators":["Low, Thomas Stanley"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-06T16:25:32Z","date_published":"2011-06-06T16:25:32Z","updated_at":"2026-07-22T22:25:24Z","subjects":["shallow impurity states","Gallium Arsenide (GaAs)","Indium Phosphide","photothermal ionization spectroscopy","far infrared (FIR) dielectric response","semiconductors"],"languages":["en"],"rights":["1985 Thomas Stanley Low"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["888140"],"render_values":[{"text":"888140","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25294","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Low, Thomas Stanley"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-06T16:25:32Z","10000-01-01","1985"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["shallow impurity states","Gallium Arsenide (GaAs)","Indium Phosphide","photothermal ionization spectroscopy","far infrared (FIR) dielectric response","semiconductors"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1985 Thomas Stanley Low"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["888140","http://hdl.handle.net/2142/25294"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-06T16:25:32Z No. of bitstreams: 1 1985_low.pdf: 8075732 bytes, checksum: e44a00425608b970495c500af58c640d (MD5)","Made available in DSpace on 2011-06-06T16:25:32Z (GMT). No. of bitstreams: 1 1985_low.pdf: 8075732 bytes, checksum: e44a00425608b970495c500af58c640d (MD5) Previous issue date: 1985","Restriction data tranferred 2014-07-01T11:14:33-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-06T16:25:32Z Item is restricted indefinitely.","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy"]}]}],"canonical_facts":{"dc:contributor":["Stillman, Gregory E."],"dc:creator":["Low, Thomas Stanley"],"dc:date":["2011-06-06T16:25:32Z","10000-01-01","1985"],"dc:description":["A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-06T16:25:32Z No. of bitstreams: 1 1985_low.pdf: 8075732 bytes, checksum: e44a00425608b970495c500af58c640d (MD5)","Made available in DSpace on 2011-06-06T16:25:32Z (GMT). No. of bitstreams: 1 1985_low.pdf: 8075732 bytes, checksum: e44a00425608b970495c500af58c640d (MD5) Previous issue date: 1985","Restriction data tranferred 2014-07-01T11:14:33-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-06T16:25:32Z Item is restricted indefinitely.","Thesis","U of I Only"],"dc:identifier":["888140","http://hdl.handle.net/2142/25294"],"dc:language":["en"],"dc:rights":["1985 Thomas Stanley Low"],"dc:subject":["shallow impurity states","Gallium Arsenide (GaAs)","Indium Phosphide","photothermal ionization spectroscopy","far infrared (FIR) dielectric response","semiconductors"],"dc:title":["Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:24Z"}