{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/24169"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/24169","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy","abstract":"For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.","abstract_html":"For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.","abstract_has_math":false,"creators":["Liao, Chi-chih"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Cheng, Keh-Yung","Hsieh, Kuang-Chien","Feng, Milton","Jin, Jianming"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-25T14:52:50Z","date_published":"2011-05-25T14:52:50Z","updated_at":"2026-07-22T22:25:23Z","subjects":["molecular beam epitaxy","Field Effect Transistor (FET)","hetero-junction bipolar transistor","Antimonide"],"languages":["en"],"rights":["Copyright 2011 Chi-chih Liao"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/24169","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cheng, Keh-Yung","Hsieh, Kuang-Chien","Feng, Milton","Jin, Jianming"]},{"key":"dc:creator","label":"Author","values":["Liao, Chi-chih"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-25T14:52:50Z","2011-05"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["molecular beam epitaxy","Field Effect Transistor (FET)","hetero-junction bipolar transistor","Antimonide"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2011 Chi-chih Liao"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/24169"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-02-09T14:26:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liao_Chi-chih.pdf: 1403706 bytes, checksum: 049aed65e4a662f733e1686d13262985 (MD5)","Made available in DSpace on 2011-05-25T14:52:50Z (GMT). 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Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-02-09T14:26:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liao_Chi-chih.pdf: 1403706 bytes, checksum: 049aed65e4a662f733e1686d13262985 (MD5)","Made available in DSpace on 2011-05-25T14:52:50Z (GMT). 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