{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23875"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23875","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Resonant Raman scattering studies of III-V semiconductor microstructures","abstract":"\"Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. AlxGa 1_xAs alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction. The disorder-induced frequency difference between the dipoleforbidden and dipole-allowed longitudinal optic (LO) modes in AlxGa 1_xA s alloys has been investigated as a function of laser photon energy, aluminum mole fraction x, and the indirect versus direct nature of the electronic band gap. For the indirect gap alloy, the intermediate resonant state is an X-valley electron effectively localized because of its short inelastic lifetime. Raman scattering via this state is described by a calculation of the Raman susceptibility that considers the random alloy potential generated by local concentration fluctuations. MEE is a new growth technology that can order these materials in two spatial directions. In a GaSh/ AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to -\"\"-··---·-··- AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a periodic corrugation introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate \"\"phonon-assisted\"\" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electronphonon interaction. For both the AlGaAs/GaAs and AlGaAs/GaAs/lnGaAs structures examined, we provide evidence that indicates first order \"\"phonon-assisted\"\" lasing is actually renormalized band gap luminescence filtered by absorption from the unpumped sample volume. Although unable to examine second order \"\"phonon-assisted\"\" lasing, we suggest that it is a stimulated Raman process.\"","abstract_html":""Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. AlxGa 1_xAs alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction. The disorder-induced frequency difference between the dipoleforbidden and dipole-allowed longitudinal optic (LO) modes in AlxGa 1_xA s alloys has been investigated as a function of laser photon energy, aluminum mole fraction x, and the indirect versus direct nature of the electronic band gap. For the indirect gap alloy, the intermediate resonant state is an X-valley electron effectively localized because of its short inelastic lifetime. Raman scattering via this state is described by a calculation of the Raman susceptibility that considers the random alloy potential generated by local concentration fluctuations. MEE is a new growth technology that can order these materials in two spatial directions. In a GaSh/ AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to -""-··---·-··- AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a periodic corrugation introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate ""phonon-assisted"" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electronphonon interaction. For both the AlGaAs/GaAs and AlGaAs/GaAs/lnGaAs structures examined, we provide evidence that indicates first order ""phonon-assisted"" lasing is actually renormalized band gap luminescence filtered by absorption from the unpumped sample volume. Although unable to examine second order ""phonon-assisted"" lasing, we suggest that it is a stimulated Raman process."","abstract_has_math":false,"creators":["Delaney, Malcolm Emil"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Klein, Miles V."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-12T15:42:03Z","date_published":"2011-05-12T15:42:03Z","updated_at":"2026-07-22T22:25:22Z","subjects":["Raman spectroscopy","semiconductor microstructures","crystal lattice structure","carrier dynamics","electron-phonon interaction"],"languages":["en"],"rights":["1991 Malcolm Emil Delaney"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["3476377"],"render_values":[{"text":"3476377","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23875","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Klein, Miles V."]},{"key":"dc:creator","label":"Author","values":["Delaney, Malcolm Emil"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-12T15:42:03Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Raman spectroscopy","semiconductor microstructures","crystal lattice structure","carrier dynamics","electron-phonon interaction"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1991 Malcolm Emil Delaney"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["3476377","http://hdl.handle.net/2142/23875"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. AlxGa 1_xAs alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction. The disorder-induced frequency difference between the dipoleforbidden and dipole-allowed longitudinal optic (LO) modes in AlxGa 1_xA s alloys has been investigated as a function of laser photon energy, aluminum mole fraction x, and the indirect versus direct nature of the electronic band gap. For the indirect gap alloy, the intermediate resonant state is an X-valley electron effectively localized because of its short inelastic lifetime. Raman scattering via this state is described by a calculation of the Raman susceptibility that considers the random alloy potential generated by local concentration fluctuations. MEE is a new growth technology that can order these materials in two spatial directions. In a GaSh/ AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to -\"\"-··---·-··- AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a periodic corrugation introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate \"\"phonon-assisted\"\" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electronphonon interaction. For both the AlGaAs/GaAs and AlGaAs/GaAs/lnGaAs structures examined, we provide evidence that indicates first order \"\"phonon-assisted\"\" lasing is actually renormalized band gap luminescence filtered by absorption from the unpumped sample volume. Although unable to examine second order \"\"phonon-assisted\"\" lasing, we suggest that it is a stimulated Raman process.\"","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-05-12T15:42:03Z No. of bitstreams: 1 1991_Delaney.pdf: 1566302 bytes, checksum: d0f58660b71eeb867ea68254e30d542f (MD5)","Made available in DSpace on 2011-05-12T15:42:03Z (GMT). No. of bitstreams: 1 1991_Delaney.pdf: 1566302 bytes, checksum: d0f58660b71eeb867ea68254e30d542f (MD5) Previous issue date: 1991","Restriction data tranferred 2014-07-01T11:13:41-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-05-12T15:42:04Z Item is restricted indefinitely.","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Resonant Raman scattering studies of III-V semiconductor microstructures"]}]}],"canonical_facts":{"dc:contributor":["Klein, Miles V."],"dc:creator":["Delaney, Malcolm Emil"],"dc:date":["2011-05-12T15:42:03Z","10000-01-01","1991"],"dc:description":["\"Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. AlxGa 1_xAs alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction. The disorder-induced frequency difference between the dipoleforbidden and dipole-allowed longitudinal optic (LO) modes in AlxGa 1_xA s alloys has been investigated as a function of laser photon energy, aluminum mole fraction x, and the indirect versus direct nature of the electronic band gap. For the indirect gap alloy, the intermediate resonant state is an X-valley electron effectively localized because of its short inelastic lifetime. Raman scattering via this state is described by a calculation of the Raman susceptibility that considers the random alloy potential generated by local concentration fluctuations. MEE is a new growth technology that can order these materials in two spatial directions. In a GaSh/ AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to -\"\"-··---·-··- AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a periodic corrugation introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate \"\"phonon-assisted\"\" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electronphonon interaction. For both the AlGaAs/GaAs and AlGaAs/GaAs/lnGaAs structures examined, we provide evidence that indicates first order \"\"phonon-assisted\"\" lasing is actually renormalized band gap luminescence filtered by absorption from the unpumped sample volume. Although unable to examine second order \"\"phonon-assisted\"\" lasing, we suggest that it is a stimulated Raman process.\"","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-05-12T15:42:03Z No. of bitstreams: 1 1991_Delaney.pdf: 1566302 bytes, checksum: d0f58660b71eeb867ea68254e30d542f (MD5)","Made available in DSpace on 2011-05-12T15:42:03Z (GMT). No. of bitstreams: 1 1991_Delaney.pdf: 1566302 bytes, checksum: d0f58660b71eeb867ea68254e30d542f (MD5) Previous issue date: 1991","Restriction data tranferred 2014-07-01T11:13:41-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-05-12T15:42:04Z Item is restricted indefinitely.","Thesis","U of I Only"],"dc:identifier":["3476377","http://hdl.handle.net/2142/23875"],"dc:language":["en"],"dc:rights":["1991 Malcolm Emil Delaney"],"dc:subject":["Raman spectroscopy","semiconductor microstructures","crystal lattice structure","carrier dynamics","electron-phonon interaction"],"dc:title":["Resonant Raman scattering studies of III-V semiconductor microstructures"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:22Z"}