{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23442"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23442","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices","abstract":"In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sbsp{\\sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($\\sbsp{\\sim}{>}400\\ \\sp\\circ$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches.","abstract_html":"In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sbsp{\\sim}{&gt;}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures (<span class=\"etd-inline-math\">\\sbsp{\\sim}{&gt;}400 \\sp\\circ</span>C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches.","abstract_has_math":true,"creators":["Chen, Eugene I-Chun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:14:19Z","date_published":"2011-05-07T14:14:19Z","updated_at":"2026-07-22T22:25:22Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Chen, Eugene I-Chun"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087338","AAI9702475","(UMI)AAI9702475"],"render_values":[{"text":"9780591087338","href":null,"code":true},{"text":"AAI9702475","href":null,"code":true},{"text":"(UMI)AAI9702475","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23442","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Chen, Eugene I-Chun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:14:19Z","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Chen, Eugene I-Chun"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087338","AAI9702475","(UMI)AAI9702475","http://hdl.handle.net/2142/23442"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sbsp{\\sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($\\sbsp{\\sim}{>}400\\ \\sp\\circ$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches.","Native oxide-based AlGaAs-GaAs metal-oxide-semiconductor field-effect transistor devices are fabricated via lateral oxidation of a thin AlAs layer. Data are presented demonstrating depletion-mode transistor operation. This shows that the native oxide is of sufficient quality to allow modulation of an underlying GaAs channel.","\"Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30 A GaAs) crystal. Data are presented showing photopumped \"\"whispering gallery mode\"\" laser operation of $\\sim$37 $\\mu$m minidisks lasers. Finally, the IILD and oxidation process is extended to the formation of a microdisk photonic lattice. Data are presented showing that the microdisks ($\\sim$9 $\\mu$m diameter) are sufficiently coupled to form \"\"bands\"\" in the photopumped recombination radiation spectra.\"","Made available in DSpace on 2011-05-07T14:14:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702475.pdf: 3242207 bytes, checksum: 52aac340db3ba55b67077a4a39508c2a (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:04:30Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:30:49-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","Access restrictions changed to Open Access by request of the author.","Open"]},{"key":"dc:title","label":"Title","values":["Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Chen, Eugene I-Chun"],"dc:date":["2011-05-07T14:14:19Z","1996"],"dc:description":["In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sbsp{\\sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($\\sbsp{\\sim}{>}400\\ \\sp\\circ$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches.","Native oxide-based AlGaAs-GaAs metal-oxide-semiconductor field-effect transistor devices are fabricated via lateral oxidation of a thin AlAs layer. Data are presented demonstrating depletion-mode transistor operation. This shows that the native oxide is of sufficient quality to allow modulation of an underlying GaAs channel.","\"Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30 A GaAs) crystal. Data are presented showing photopumped \"\"whispering gallery mode\"\" laser operation of $\\sim$37 $\\mu$m minidisks lasers. Finally, the IILD and oxidation process is extended to the formation of a microdisk photonic lattice. Data are presented showing that the microdisks ($\\sim$9 $\\mu$m diameter) are sufficiently coupled to form \"\"bands\"\" in the photopumped recombination radiation spectra.\"","Made available in DSpace on 2011-05-07T14:14:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702475.pdf: 3242207 bytes, checksum: 52aac340db3ba55b67077a4a39508c2a (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:04:30Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:30:49-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","Access restrictions changed to Open Access by request of the author.","Open"],"dc:identifier":["9780591087338","AAI9702475","(UMI)AAI9702475","http://hdl.handle.net/2142/23442"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Chen, Eugene I-Chun"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:22Z"}