{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23363"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23363","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Application of electroabsorption in a semiconductor laser for electromagnetic field sensing","abstract":"The application of electroabsorption in an AlGaAs quantum-well semiconductor laser device for optically based electromagnetic field sensing has been studied. A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter.","abstract_html":"The application of electroabsorption in an AlGaAs quantum-well semiconductor laser device for optically based electromagnetic field sensing has been studied. A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter.","abstract_has_math":false,"creators":["Genis, Patrick Charles"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Verdeyen, Joseph T."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:11:31Z","date_published":"2011-05-07T14:11:31Z","updated_at":"2026-07-22T22:25:21Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Physics, Optics"],"languages":["eng"],"rights":["Copyright 1990 Genis, Patrick Charles"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114244","(UMI)AAI9114244"],"render_values":[{"text":"AAI9114244","href":null,"code":true},{"text":"(UMI)AAI9114244","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23363","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Verdeyen, Joseph T."]},{"key":"dc:creator","label":"Author","values":["Genis, Patrick Charles"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:11:31Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Physics, Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Genis, Patrick Charles"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114244","(UMI)AAI9114244","http://hdl.handle.net/2142/23363"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The application of electroabsorption in an AlGaAs quantum-well semiconductor laser device for optically based electromagnetic field sensing has been studied. A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter.","Observations of changes in the transmitted optical power through this device as a function of the applied forward and/or reverse dc bias have demonstrated nearly linear transfer functions for a given operating wavelength. Measurable changes in transmission were also observed for relatively small changes in applied voltage ($\\approx$100 $\\mu$V) allowing for the possibility of sensors with high sensitivity. Investigation of the high frequency operation of the device has shown a one-to-one correspondence in amplitude and phase between the applied RF voltage and the modulation of the transmitted optical power over a wide frequency range ($>$1 GHz). Linear operation has been observed for a dynamic range exceeding 75 dB of the applied RF power at 20 MHz.","Experiments that had coupled receiving antennas to a modulator have demonstrated the ability to measure an incident electric field of 34 V/m with a 300 MHz bandwidth and the corresponding time derivative of the magnetic field with a 30 MHz bandwidth. At 20 MHz, electric fields as small as 2 V/m have been measured. A 24 dB dynamic range in the measured electric field has been demonstrated and an expected range of 75 dB would imply the ability to measure fields larger than 10$\\sp4$ V/m.","The demonstrated performance characteristics of wide bandwidth operation and linear response with respect to the applied voltage make these types of semiconductor structures attractive for wide-band electromagnetic field sensing as well as for other low-power modulation applications.","Made available in DSpace on 2011-05-07T14:11:31Z (GMT). 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A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter.","Observations of changes in the transmitted optical power through this device as a function of the applied forward and/or reverse dc bias have demonstrated nearly linear transfer functions for a given operating wavelength. Measurable changes in transmission were also observed for relatively small changes in applied voltage ($\\approx$100 $\\mu$V) allowing for the possibility of sensors with high sensitivity. Investigation of the high frequency operation of the device has shown a one-to-one correspondence in amplitude and phase between the applied RF voltage and the modulation of the transmitted optical power over a wide frequency range ($>$1 GHz). Linear operation has been observed for a dynamic range exceeding 75 dB of the applied RF power at 20 MHz.","Experiments that had coupled receiving antennas to a modulator have demonstrated the ability to measure an incident electric field of 34 V/m with a 300 MHz bandwidth and the corresponding time derivative of the magnetic field with a 30 MHz bandwidth. At 20 MHz, electric fields as small as 2 V/m have been measured. A 24 dB dynamic range in the measured electric field has been demonstrated and an expected range of 75 dB would imply the ability to measure fields larger than 10$\\sp4$ V/m.","The demonstrated performance characteristics of wide bandwidth operation and linear response with respect to the applied voltage make these types of semiconductor structures attractive for wide-band electromagnetic field sensing as well as for other low-power modulation applications.","Made available in DSpace on 2011-05-07T14:11:31Z (GMT). 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