{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23142"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23142","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Long-wavelength gallium-indium-arsenide quantum wire lasers","abstract":"Long-wavelength (1.55 $\\mu$m) $\\rm Ga\\sb{x}In\\sb{1-x}As/Al\\sb{0.48}In\\sb{0.52}As$ multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\\sb2$/(InAs)$\\sb{2.2}$ short-period-superlattice (SPS) layers by the strained-induced lateral-layer ordering (SILO) process. The analysis of cross-sectional and plan-view transmission electron microscopic images, photoluminescence peak energies, and photoluminescence polarization anisotropy has confirmed the QWR formation. The SILO process induced lateral composition modulation occurs over a wide temperature range near 500$\\sp\\circ$C, and the magnitude of strain accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model is the driving force of the SILO process, instead of the simple surface diffusion model. The 77 K threshold current densities (J$\\sb{\\rm th}$) for $\\rm Ga\\sb{x}In\\sb{1-x}As$ MQWR laser diodes with laser cavities along the (110) and (110) directions showed an anisotropy ratio of $\\sim$10. Due to the directionality of two-dimensional quantum confinement, lasers with cavities along the (110) direction consistently showed a lower J$\\sb{\\rm th}$ than those along the (110) direction. The typical J$\\sb{\\rm th}$ for the MQWR laser with the contact stripe perpendicular to the QWRs is 1 kA/cm$\\sp2$ at 300 K, which is a 30% improvement when compared with that for the conventional quantum well laser. The temperature dependence of the lasing wavelength from this Fabry-Perot cavity MQWR laser is less than 1 A/$\\sp\\circ$C between 77 and 300 K. The SILO process induced triaxial strain in the (GaAS)$\\sb2$/(InAS)$\\sb{2.2}$ SPS active region is responsible for this temperature insensitivity. The lasing wavelengths are about 1.715 $\\mu$m and 1.695 $\\mu$m at 300 K and 77 K, respectively.","abstract_html":"Long-wavelength (1.55 <span class=\"etd-inline-math\">&mu;</span>m) $\\rm Ga\\sb{x}In\\sb{1-x}As/Al\\sb{0.48}In\\sb{0.52}As$ multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\\sb2$/(InAs)$\\sb{2.2}$ short-period-superlattice (SPS) layers by the strained-induced lateral-layer ordering (SILO) process. The analysis of cross-sectional and plan-view transmission electron microscopic images, photoluminescence peak energies, and photoluminescence polarization anisotropy has confirmed the QWR formation. The SILO process induced lateral composition modulation occurs over a wide temperature range near 500$\\sp\\circ$C, and the magnitude of strain accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model is the driving force of the SILO process, instead of the simple surface diffusion model. The 77 K threshold current densities (J$\\sb{\\rm th}$) for $\\rm Ga\\sb{x}In\\sb{1-x}As$ MQWR laser diodes with laser cavities along the (110) and (110) directions showed an anisotropy ratio of $\\sim$10. Due to the directionality of two-dimensional quantum confinement, lasers with cavities along the (110) direction consistently showed a lower J$\\sb{\\rm th}$ than those along the (110) direction. The typical J$\\sb{\\rm th}$ for the MQWR laser with the contact stripe perpendicular to the QWRs is 1 kA/cm$\\sp2$ at 300 K, which is a 30% improvement when compared with that for the conventional quantum well laser. The temperature dependence of the lasing wavelength from this Fabry-Perot cavity MQWR laser is less than 1 A/$\\sp\\circ$C between 77 and 300 K. The SILO process induced triaxial strain in the (GaAS)$\\sb2$/(InAS)$\\sb{2.2}$ SPS active region is responsible for this temperature insensitivity. The lasing wavelengths are about 1.715 <span class=\"etd-inline-math\">&mu;</span>m and 1.695 <span class=\"etd-inline-math\">&mu;</span>m at 300 K and 77 K, respectively.","abstract_has_math":true,"creators":["Chou, Shu-Tsun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Cheng, Keh-Yung"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:03:39Z","date_published":"2011-05-07T14:03:39Z","updated_at":"2026-07-22T22:25:21Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1995 Chou, Shu-Tsun"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543557","(UMI)AAI9543557"],"render_values":[{"text":"AAI9543557","href":null,"code":true},{"text":"(UMI)AAI9543557","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23142","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cheng, Keh-Yung"]},{"key":"dc:creator","label":"Author","values":["Chou, Shu-Tsun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:03:39Z","10000-01-01","1995"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1995 Chou, Shu-Tsun"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543557","(UMI)AAI9543557","http://hdl.handle.net/2142/23142"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Long-wavelength (1.55 $\\mu$m) $\\rm Ga\\sb{x}In\\sb{1-x}As/Al\\sb{0.48}In\\sb{0.52}As$ multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\\sb2$/(InAs)$\\sb{2.2}$ short-period-superlattice (SPS) layers by the strained-induced lateral-layer ordering (SILO) process. The analysis of cross-sectional and plan-view transmission electron microscopic images, photoluminescence peak energies, and photoluminescence polarization anisotropy has confirmed the QWR formation. The SILO process induced lateral composition modulation occurs over a wide temperature range near 500$\\sp\\circ$C, and the magnitude of strain accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model is the driving force of the SILO process, instead of the simple surface diffusion model. The 77 K threshold current densities (J$\\sb{\\rm th}$) for $\\rm Ga\\sb{x}In\\sb{1-x}As$ MQWR laser diodes with laser cavities along the (110) and (110) directions showed an anisotropy ratio of $\\sim$10. Due to the directionality of two-dimensional quantum confinement, lasers with cavities along the (110) direction consistently showed a lower J$\\sb{\\rm th}$ than those along the (110) direction. The typical J$\\sb{\\rm th}$ for the MQWR laser with the contact stripe perpendicular to the QWRs is 1 kA/cm$\\sp2$ at 300 K, which is a 30% improvement when compared with that for the conventional quantum well laser. The temperature dependence of the lasing wavelength from this Fabry-Perot cavity MQWR laser is less than 1 A/$\\sp\\circ$C between 77 and 300 K. The SILO process induced triaxial strain in the (GaAS)$\\sb2$/(InAS)$\\sb{2.2}$ SPS active region is responsible for this temperature insensitivity. The lasing wavelengths are about 1.715 $\\mu$m and 1.695 $\\mu$m at 300 K and 77 K, respectively.","Made available in DSpace on 2011-05-07T14:03:39Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543557.pdf: 4055648 bytes, checksum: 166f23573dcafa731e8337945a7be991 (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:02:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Long-wavelength gallium-indium-arsenide quantum wire lasers"]}]}],"canonical_facts":{"dc:contributor":["Cheng, Keh-Yung"],"dc:creator":["Chou, Shu-Tsun"],"dc:date":["2011-05-07T14:03:39Z","10000-01-01","1995"],"dc:description":["Long-wavelength (1.55 $\\mu$m) $\\rm Ga\\sb{x}In\\sb{1-x}As/Al\\sb{0.48}In\\sb{0.52}As$ multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\\sb2$/(InAs)$\\sb{2.2}$ short-period-superlattice (SPS) layers by the strained-induced lateral-layer ordering (SILO) process. The analysis of cross-sectional and plan-view transmission electron microscopic images, photoluminescence peak energies, and photoluminescence polarization anisotropy has confirmed the QWR formation. The SILO process induced lateral composition modulation occurs over a wide temperature range near 500$\\sp\\circ$C, and the magnitude of strain accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model is the driving force of the SILO process, instead of the simple surface diffusion model. The 77 K threshold current densities (J$\\sb{\\rm th}$) for $\\rm Ga\\sb{x}In\\sb{1-x}As$ MQWR laser diodes with laser cavities along the (110) and (110) directions showed an anisotropy ratio of $\\sim$10. Due to the directionality of two-dimensional quantum confinement, lasers with cavities along the (110) direction consistently showed a lower J$\\sb{\\rm th}$ than those along the (110) direction. The typical J$\\sb{\\rm th}$ for the MQWR laser with the contact stripe perpendicular to the QWRs is 1 kA/cm$\\sp2$ at 300 K, which is a 30% improvement when compared with that for the conventional quantum well laser. The temperature dependence of the lasing wavelength from this Fabry-Perot cavity MQWR laser is less than 1 A/$\\sp\\circ$C between 77 and 300 K. The SILO process induced triaxial strain in the (GaAS)$\\sb2$/(InAS)$\\sb{2.2}$ SPS active region is responsible for this temperature insensitivity. The lasing wavelengths are about 1.715 $\\mu$m and 1.695 $\\mu$m at 300 K and 77 K, respectively.","Made available in DSpace on 2011-05-07T14:03:39Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543557.pdf: 4055648 bytes, checksum: 166f23573dcafa731e8337945a7be991 (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:02:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9543557","(UMI)AAI9543557","http://hdl.handle.net/2142/23142"],"dc:language":["eng"],"dc:rights":["Copyright 1995 Chou, Shu-Tsun"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Long-wavelength gallium-indium-arsenide quantum wire lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:21Z"}