{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22620"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22620","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy","abstract":"The growth rate R of Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)$ films deposited on Si(001)2 $\\times$ 1 substrates from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\\sb{\\rm s}$(300-950$\\sp\\circ$C) and impingement flux J (0.3-$7.7\\times10\\sp{16}$ cm$\\sp{-2}$ s$\\sp{-1}$). R(T$\\sb{\\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6,$ respectively. The growth rate of SiGe alloys R$\\sb{\\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\\sb{\\rm SiGe}$ increased with Ge surface coverage $\\theta\\sb{\\rm Ge}$ due to the lower activation energy of H$\\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\\sb{\\rm SiGe}$ decreases with $\\theta\\sb{\\rm Ge}$ due to the lower reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\\sb{\\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\\sb{\\rm s}$ and incident flux ratios $\\rm J\\sb{Ge2H6}/J\\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\\rm Si\\sb2H\\sb6$ with Si surface sites, $\\rm Si\\sb2H\\sb6$ with Ge sites, $\\rm Ge\\sb2H\\sb6$ with Si sites, and $\\rm Ge\\sb2H\\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\\rm S\\sbsp{Ge2H6}{Si}$ and $\\rm S\\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\\times10\\sp{-3}$ respectively.","abstract_html":"The growth rate R of Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)$ films deposited on Si(001)2 $\\times$ 1 substrates from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\\sb{\\rm s}$(300-950$\\sp\\circ$C) and impingement flux J (0.3-$7.7\\times10\\sp{16}$ cm$\\sp{-2}$ s$\\sp{-1}$). R(T$\\sb{\\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6,$ respectively. The growth rate of SiGe alloys R$\\sb{\\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\\sb{\\rm SiGe}$ increased with Ge surface coverage <span class=\"etd-inline-math\">&theta;\\sb{\\rm Ge}</span> due to the lower activation energy of H$\\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\\sb{\\rm SiGe}$ decreases with <span class=\"etd-inline-math\">&theta;\\sb{\\rm Ge}</span> due to the lower reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\\sb{\\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\\sb{\\rm s}$ and incident flux ratios $\\rm J\\sb{Ge2H6}/J\\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\\rm Si\\sb2H\\sb6$ with Si surface sites, $\\rm Si\\sb2H\\sb6$ with Ge sites, $\\rm Ge\\sb2H\\sb6$ with Si sites, and $\\rm Ge\\sb2H\\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\\rm S\\sbsp{Ge2H6}{Si}$ and $\\rm S\\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\\times10\\sp{-3}$ respectively.","abstract_has_math":true,"creators":["Bramblett, Thomas Richard"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Engineering, Materials Science","degree_department":null,"school":null,"contributors":["Greene, J.E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:45:45Z","date_published":"2011-05-07T13:45:45Z","updated_at":"2026-07-22T22:25:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1994 Bramblett, Thomas Richard"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512307","(UMI)AAI9512307"],"render_values":[{"text":"AAI9512307","href":null,"code":true},{"text":"(UMI)AAI9512307","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22620","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, J.E."]},{"key":"dc:creator","label":"Author","values":["Bramblett, Thomas Richard"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:45:45Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering, Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Bramblett, Thomas Richard"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512307","(UMI)AAI9512307","http://hdl.handle.net/2142/22620"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The growth rate R of Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)$ films deposited on Si(001)2 $\\times$ 1 substrates from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\\sb{\\rm s}$(300-950$\\sp\\circ$C) and impingement flux J (0.3-$7.7\\times10\\sp{16}$ cm$\\sp{-2}$ s$\\sp{-1}$). R(T$\\sb{\\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6,$ respectively. The growth rate of SiGe alloys R$\\sb{\\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\\sb{\\rm SiGe}$ increased with Ge surface coverage $\\theta\\sb{\\rm Ge}$ due to the lower activation energy of H$\\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\\sb{\\rm SiGe}$ decreases with $\\theta\\sb{\\rm Ge}$ due to the lower reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\\sb{\\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\\sb{\\rm s}$ and incident flux ratios $\\rm J\\sb{Ge2H6}/J\\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\\rm Si\\sb2H\\sb6$ with Si surface sites, $\\rm Si\\sb2H\\sb6$ with Ge sites, $\\rm Ge\\sb2H\\sb6$ with Si sites, and $\\rm Ge\\sb2H\\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\\rm S\\sbsp{Ge2H6}{Si}$ and $\\rm S\\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\\times10\\sp{-3}$ respectively.","Made available in DSpace on 2011-05-07T13:45:45Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512307.pdf: 6887603 bytes, checksum: 6290040216afa9f39415c3a215097b27 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:58:52Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:43-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Greene, J.E."],"dc:creator":["Bramblett, Thomas Richard"],"dc:date":["2011-05-07T13:45:45Z","10000-01-01","1994"],"dc:description":["The growth rate R of Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)$ films deposited on Si(001)2 $\\times$ 1 substrates from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\\sb{\\rm s}$(300-950$\\sp\\circ$C) and impingement flux J (0.3-$7.7\\times10\\sp{16}$ cm$\\sp{-2}$ s$\\sp{-1}$). R(T$\\sb{\\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6,$ respectively. The growth rate of SiGe alloys R$\\sb{\\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\\sb{\\rm SiGe}$ increased with Ge surface coverage $\\theta\\sb{\\rm Ge}$ due to the lower activation energy of H$\\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\\sb{\\rm SiGe}$ decreases with $\\theta\\sb{\\rm Ge}$ due to the lower reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\\sb{\\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\\sb{\\rm s}$ and incident flux ratios $\\rm J\\sb{Ge2H6}/J\\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\\rm Si\\sb2H\\sb6$ with Si surface sites, $\\rm Si\\sb2H\\sb6$ with Ge sites, $\\rm Ge\\sb2H\\sb6$ with Si sites, and $\\rm Ge\\sb2H\\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\\rm S\\sbsp{Ge2H6}{Si}$ and $\\rm S\\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\\times10\\sp{-3}$ respectively.","Made available in DSpace on 2011-05-07T13:45:45Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512307.pdf: 6887603 bytes, checksum: 6290040216afa9f39415c3a215097b27 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:58:52Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:43-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9512307","(UMI)AAI9512307","http://hdl.handle.net/2142/22620"],"dc:language":["eng"],"dc:rights":["Copyright 1994 Bramblett, Thomas Richard"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Engineering, Materials Science"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:20Z"}