{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22547"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22547","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Evolution of the surface morphology of homoepitaxial germanium(001) and heteropitaxial silicon(0.5) germanium(0.5)/germanium(001) deposited by molecular beam epitaxy at reduced temperatures","abstract":"We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $\\rm E\\sb{ES}\\approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by $\\{105\\}$ facets.","abstract_html":"We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $\\rm E\\sb{ES}\\approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by $\\{105\\}$ facets.","abstract_has_math":true,"creators":["Van Nostrand, Joseph Edward"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineerin","degree_department":null,"school":null,"contributors":["Cahill, David G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:43:22Z","date_published":"2011-05-07T13:43:22Z","updated_at":"2026-07-22T22:25:20Z","subjects":["Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Van Nostrand, Joseph Edward"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591199512","AAI9712469","(UMI)AAI9712469"],"render_values":[{"text":"9780591199512","href":null,"code":true},{"text":"AAI9712469","href":null,"code":true},{"text":"(UMI)AAI9712469","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22547","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cahill, David G."]},{"key":"dc:creator","label":"Author","values":["Van Nostrand, Joseph Edward"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:43:22Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineerin"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Van Nostrand, Joseph Edward"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591199512","AAI9712469","(UMI)AAI9712469","http://hdl.handle.net/2142/22547"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $\\rm E\\sb{ES}\\approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by $\\{105\\}$ facets.","Thin $\\rm Si\\sb{0.5}Ge\\sb{0.5}/Ge(001)$ films deposited in the presence of tensile strain result in the formation of Shockley partial misfit dislocations and a subsequent stacking fault. The stacking faults extend to the film surface, where they impede step flow. This results in step bunching and the formation of rectangular mounds on the surface. Annealing these films results in an inversion of the mounds into pits.","Made available in DSpace on 2011-05-07T13:43:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9712469.pdf: 4271348 bytes, checksum: d475dd9e00db26234d82c2f7d1df03e7 (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:58:22Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Evolution of the surface morphology of homoepitaxial germanium(001) and heteropitaxial silicon(0.5) germanium(0.5)/germanium(001) deposited by molecular beam epitaxy at reduced temperatures"]}]}],"canonical_facts":{"dc:contributor":["Cahill, David G."],"dc:creator":["Van Nostrand, Joseph Edward"],"dc:date":["2011-05-07T13:43:22Z","10000-01-01","1996"],"dc:description":["We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $\\rm E\\sb{ES}\\approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by $\\{105\\}$ facets.","Thin $\\rm Si\\sb{0.5}Ge\\sb{0.5}/Ge(001)$ films deposited in the presence of tensile strain result in the formation of Shockley partial misfit dislocations and a subsequent stacking fault. The stacking faults extend to the film surface, where they impede step flow. This results in step bunching and the formation of rectangular mounds on the surface. Annealing these films results in an inversion of the mounds into pits.","Made available in DSpace on 2011-05-07T13:43:22Z (GMT). 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