{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22468"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22468","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"An investigation of the temperature distribution induced during laser chemical vapor deposition (LCVD) of titanium nitride on titanium-aluminum-vanadium","abstract":"To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$\\sb4,$ N$\\sb2,$ and H$\\sb2.$ Also, deposition has been studied as a function of the N$\\sb2$:H$\\sb2$ gas ratio, the TiCl$\\sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS).","abstract_html":"To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$\\sb4,$ N$\\sb2,$ and H$\\sb2.$ Also, deposition has been studied as a function of the N$\\sb2$:H$\\sb2$ gas ratio, the TiCl$\\sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS).","abstract_has_math":true,"creators":["Azer, Magdi Naim"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Mechanical Science and Engineering","degree_department":null,"school":null,"contributors":["Mazumder, Jyotirmoy"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:40:48Z","date_published":"2011-05-07T13:40:48Z","updated_at":"2026-07-22T22:25:20Z","subjects":["Engineering, Mechanical","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Azer, Magdi Naim"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087796","AAI9702453","(UMI)AAI9702453"],"render_values":[{"text":"9780591087796","href":null,"code":true},{"text":"AAI9702453","href":null,"code":true},{"text":"(UMI)AAI9702453","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22468","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Mazumder, Jyotirmoy"]},{"key":"dc:creator","label":"Author","values":["Azer, Magdi Naim"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:40:48Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Mechanical Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Mechanical","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Azer, Magdi Naim"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087796","AAI9702453","(UMI)AAI9702453","http://hdl.handle.net/2142/22468"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$\\sb4,$ N$\\sb2,$ and H$\\sb2.$ Also, deposition has been studied as a function of the N$\\sb2$:H$\\sb2$ gas ratio, the TiCl$\\sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS).","While the substrate temperature and the gas composition have the greatest influence on TiN film growth, H$\\sb2$ exerts the greatest influence on TiN film growth. Also, enhanced mass transport associated with localized laser beam heating has led to film growth rates on the order of 1 $\\mu$m/sec; however, there is still evidence of reactant depletion at the center of the laser heated spot.","In addition to calculating film growth rates based on film height, two new methods of characterizing the film growth rate have been developed. Using these growth rates, three insights have been obtained. First, the film growth rates are 1-1/2 orders of magnitude greater than typical CVD deposition rates. Second, radial growth of the films continues after reactant depletion occurs at the center of the deposit. Third, comparison of the growth rates with LIF measurements supports the concept of a temperature-dependent sticking coefficient.","Based on the experiments, reaction rate equations have been postulated as a function of N$\\sb2$/H$\\sb2$ gas ratio and TiCl$\\sb4$ partial pressure. Also, the apparent activation energy for deposition is 108.9 kJ/mol when one calculates the deposition rate based on film height. Using alternate definitions of film growth rates, the apparent activation energies are 65.2 and 81.4 kl/mol. The discrepancy in these activation energies has occurred because part of the measured film volume is actually TiCl$\\sb4$ rather than TiN.","Made available in DSpace on 2011-05-07T13:40:48Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702453.pdf: 18048448 bytes, checksum: f03463f6abae68eeea4a998ba3ab9817 (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:49Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:08-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["An investigation of the temperature distribution induced during laser chemical vapor deposition (LCVD) of titanium nitride on titanium-aluminum-vanadium"]}]}],"canonical_facts":{"dc:contributor":["Mazumder, Jyotirmoy"],"dc:creator":["Azer, Magdi Naim"],"dc:date":["2011-05-07T13:40:48Z","10000-01-01","1996"],"dc:description":["To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$\\sb4,$ N$\\sb2,$ and H$\\sb2.$ Also, deposition has been studied as a function of the N$\\sb2$:H$\\sb2$ gas ratio, the TiCl$\\sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS).","While the substrate temperature and the gas composition have the greatest influence on TiN film growth, H$\\sb2$ exerts the greatest influence on TiN film growth. Also, enhanced mass transport associated with localized laser beam heating has led to film growth rates on the order of 1 $\\mu$m/sec; however, there is still evidence of reactant depletion at the center of the laser heated spot.","In addition to calculating film growth rates based on film height, two new methods of characterizing the film growth rate have been developed. Using these growth rates, three insights have been obtained. First, the film growth rates are 1-1/2 orders of magnitude greater than typical CVD deposition rates. Second, radial growth of the films continues after reactant depletion occurs at the center of the deposit. Third, comparison of the growth rates with LIF measurements supports the concept of a temperature-dependent sticking coefficient.","Based on the experiments, reaction rate equations have been postulated as a function of N$\\sb2$/H$\\sb2$ gas ratio and TiCl$\\sb4$ partial pressure. Also, the apparent activation energy for deposition is 108.9 kJ/mol when one calculates the deposition rate based on film height. Using alternate definitions of film growth rates, the apparent activation energies are 65.2 and 81.4 kl/mol. The discrepancy in these activation energies has occurred because part of the measured film volume is actually TiCl$\\sb4$ rather than TiN.","Made available in DSpace on 2011-05-07T13:40:48Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702453.pdf: 18048448 bytes, checksum: f03463f6abae68eeea4a998ba3ab9817 (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:49Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:08-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["9780591087796","AAI9702453","(UMI)AAI9702453","http://hdl.handle.net/2142/22468"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Azer, Magdi Naim"],"dc:subject":["Engineering, Mechanical","Engineering, Materials Science"],"dc:title":["An investigation of the temperature distribution induced during laser chemical vapor deposition (LCVD) of titanium nitride on titanium-aluminum-vanadium"],"dc:type":["text"],"thesis:degree_discipline":["Mechanical Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:20Z"}