{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22368"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22368","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Monte Carlo simulation of quasi-one-dimensional semiconductors","abstract":"Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.","abstract_html":"Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.","abstract_has_math":false,"creators":["Briggs, Stephen Jeffrey"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Leburton, Jean-Pierre"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:37:37Z","date_published":"2011-05-07T13:37:37Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Physics, Electricity and Magnetism","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1990 Briggs, Stephen Jeffrey"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114182","(UMI)AAI9114182"],"render_values":[{"text":"AAI9114182","href":null,"code":true},{"text":"(UMI)AAI9114182","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22368","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leburton, Jean-Pierre"]},{"key":"dc:creator","label":"Author","values":["Briggs, Stephen Jeffrey"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:37:37Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Electricity and Magnetism","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Briggs, Stephen Jeffrey"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114182","(UMI)AAI9114182","http://hdl.handle.net/2142/22368"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.","The linear approximation to the Boltzmann Transport Equation is found to be inconsistent for fields as low as 50 V/cm. A situation occurs under longitudinal field conditions where an upper subband population is enhanced with respect to the bottom subband. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.","Differential mobility in excess of twice the bulk value at 300 K is obtained. The simulation estimates the time required for electrons to undergo intervalley scattering to three-dimensional states to be in the range of 4 nsec down to 1 psec for fields in the range of 100 V/cm to 8 kV/cm. The corresponding distances in the wire vary from 130 $\\mu$m down to the submicron range.","Made available in DSpace on 2011-05-07T13:37:37Z (GMT). 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A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.","The linear approximation to the Boltzmann Transport Equation is found to be inconsistent for fields as low as 50 V/cm. A situation occurs under longitudinal field conditions where an upper subband population is enhanced with respect to the bottom subband. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.","Differential mobility in excess of twice the bulk value at 300 K is obtained. The simulation estimates the time required for electrons to undergo intervalley scattering to three-dimensional states to be in the range of 4 nsec down to 1 psec for fields in the range of 100 V/cm to 8 kV/cm. The corresponding distances in the wire vary from 130 $\\mu$m down to the submicron range.","Made available in DSpace on 2011-05-07T13:37:37Z (GMT). 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