{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22247"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22247","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers","abstract":"A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included in the simulator are first presented. Carrier transport in bulk regions of the device is modeled with drift-diffusion theory, and carrier fluxes at abrupt heterojunctions are treated with ballistic transport derived from thermionic emission theory. In addition, the first treatment of carrier capture in a quantum well laser simulator is presented, and a net capture rate is derived.","abstract_html":"A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included in the simulator are first presented. Carrier transport in bulk regions of the device is modeled with drift-diffusion theory, and carrier fluxes at abrupt heterojunctions are treated with ballistic transport derived from thermionic emission theory. In addition, the first treatment of carrier capture in a quantum well laser simulator is presented, and a net capture rate is derived.","abstract_has_math":false,"creators":["Grupen, Matthew Eric"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Hess, Karl"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:33:48Z","date_published":"2011-05-07T13:33:48Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1994 Grupen, Matthew Eric"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512378","(UMI)AAI9512378"],"render_values":[{"text":"AAI9512378","href":null,"code":true},{"text":"(UMI)AAI9512378","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22247","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hess, Karl"]},{"key":"dc:creator","label":"Author","values":["Grupen, Matthew Eric"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:33:48Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Grupen, Matthew Eric"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512378","(UMI)AAI9512378","http://hdl.handle.net/2142/22247"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included in the simulator are first presented. Carrier transport in bulk regions of the device is modeled with drift-diffusion theory, and carrier fluxes at abrupt heterojunctions are treated with ballistic transport derived from thermionic emission theory. In addition, the first treatment of carrier capture in a quantum well laser simulator is presented, and a net capture rate is derived.","The methods used to solve the device equations are also discussed in detail. Since the simulation of quantum well lasers is a multiscale problem, a mesh of discrete points must be carefully generated to adequately resolve the device. Also, carrier transport at hetero-junctions and the injection of carriers into the quantum well require new discretization schemes not found in other electron device simulators.","Finally, modulation responses calculated with Minilase are studied. A direct comparison with experiment shows excellent agreement between the simulation results and measured data. The simulator is further used to explain the causes of gain saturation and low-frequency roll-off and to explore design variations that improve the modulation bandwidth. The study of the modulation responses confirms that, for the first time, the most significant carrier transport mechanisms have been incorporated into a quantum well laser simulator.","Made available in DSpace on 2011-05-07T13:33:48Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512378.pdf: 3037250 bytes, checksum: dabc8379df65942d201ee0322ebbab31 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:56:19Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:26:19-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers"]}]}],"canonical_facts":{"dc:contributor":["Hess, Karl"],"dc:creator":["Grupen, Matthew Eric"],"dc:date":["2011-05-07T13:33:48Z","10000-01-01","1994"],"dc:description":["A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and radiative recombination processes and the carrier transport mechanisms included in the simulator are first presented. Carrier transport in bulk regions of the device is modeled with drift-diffusion theory, and carrier fluxes at abrupt heterojunctions are treated with ballistic transport derived from thermionic emission theory. In addition, the first treatment of carrier capture in a quantum well laser simulator is presented, and a net capture rate is derived.","The methods used to solve the device equations are also discussed in detail. Since the simulation of quantum well lasers is a multiscale problem, a mesh of discrete points must be carefully generated to adequately resolve the device. Also, carrier transport at hetero-junctions and the injection of carriers into the quantum well require new discretization schemes not found in other electron device simulators.","Finally, modulation responses calculated with Minilase are studied. A direct comparison with experiment shows excellent agreement between the simulation results and measured data. The simulator is further used to explain the causes of gain saturation and low-frequency roll-off and to explore design variations that improve the modulation bandwidth. The study of the modulation responses confirms that, for the first time, the most significant carrier transport mechanisms have been incorporated into a quantum well laser simulator.","Made available in DSpace on 2011-05-07T13:33:48Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512378.pdf: 3037250 bytes, checksum: dabc8379df65942d201ee0322ebbab31 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:56:19Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:26:19-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9512378","(UMI)AAI9512378","http://hdl.handle.net/2142/22247"],"dc:language":["eng"],"dc:rights":["Copyright 1994 Grupen, Matthew Eric"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"dc:title":["The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:19Z"}