{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21833"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21833","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Preparation and characterization of metal/sapphire and metal/polyimide thin film laminates","abstract":"The aim of this research program was to understand the effect of thermal cycling on metal/insulator (sapphire and polyimide, PI) thin film laminates through studies of microstructure and microchemistry. Systems studied were: Ti/sapphire, Au/Cu/Ti/PI/Si and Cr/Cu/Cr/PI/Si. In the Ti/sapphire system, there was an additional interest to understand the effect of growth temperature on growth orientation and crystal quality of the films. The three material systems were characterized by a number of analytical techniques such as cross-section TEM (XTEM), plan-view TEM, SEM, Auger Electron Spectroscopy and X-ray diffraction. Of these, XTEM was the most extensively used.","abstract_html":"The aim of this research program was to understand the effect of thermal cycling on metal/insulator (sapphire and polyimide, PI) thin film laminates through studies of microstructure and microchemistry. Systems studied were: Ti/sapphire, Au/Cu/Ti/PI/Si and Cr/Cu/Cr/PI/Si. In the Ti/sapphire system, there was an additional interest to understand the effect of growth temperature on growth orientation and crystal quality of the films. The three material systems were characterized by a number of analytical techniques such as cross-section TEM (XTEM), plan-view TEM, SEM, Auger Electron Spectroscopy and X-ray diffraction. Of these, XTEM was the most extensively used.","abstract_has_math":false,"creators":["Peddada, Satyanarayana Rao"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Engineering","degree_department":null,"school":null,"contributors":["Birnbaum, Howard K."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:20:31Z","date_published":"2011-05-07T13:20:31Z","updated_at":"2026-07-22T22:25:18Z","subjects":["Engineering, Metallurgy","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1991 Peddada, Satyanarayana Rao"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210950","(UMI)AAI9210950"],"render_values":[{"text":"AAI9210950","href":null,"code":true},{"text":"(UMI)AAI9210950","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21833","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Birnbaum, Howard K."]},{"key":"dc:creator","label":"Author","values":["Peddada, Satyanarayana Rao"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:20:31Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Metallurgy","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1991 Peddada, Satyanarayana Rao"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210950","(UMI)AAI9210950","http://hdl.handle.net/2142/21833"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The aim of this research program was to understand the effect of thermal cycling on metal/insulator (sapphire and polyimide, PI) thin film laminates through studies of microstructure and microchemistry. Systems studied were: Ti/sapphire, Au/Cu/Ti/PI/Si and Cr/Cu/Cr/PI/Si. In the Ti/sapphire system, there was an additional interest to understand the effect of growth temperature on growth orientation and crystal quality of the films. The three material systems were characterized by a number of analytical techniques such as cross-section TEM (XTEM), plan-view TEM, SEM, Auger Electron Spectroscopy and X-ray diffraction. Of these, XTEM was the most extensively used.","In the Ti/sapphire system, single crystals formed in the temperature range 245-750$\\sp\\circ$C with the respective close packed planes and directions parallel. The crystal quality improved with an increase in the growth temperature up to 750$\\sp\\circ$C. The interface was observed to be sharp with no reaction layer formation even at a growth temperature of 950$\\sp\\circ$C. On annealing in D$\\sb2$ gas at 325$\\sp\\circ$C for 48 hours, the Ti film transformed to TiD$\\sb2,$ but no mechanical failures were observed.","In the Ti/PI system, on annealing in D$\\sb2$ gas at 325$\\sp\\circ$C for 48 hours, the interface remained sharp to a large extent, but a discontinuous reaction zone consisting of an oxide, $\\rm Ti\\sb5O\\sb9,$ formed at the interface due to a reaction between Ti and moisture in the PI. On annealing in D$\\sb2$ gas, spontaneous edge delamination was observed at the Ti/PI interface. There was no extensive diffusion of Ti or Cu into PI even in samples annealed at 400$\\sp\\circ$C for 48 hours.","In the Cr/PI system, the interface remained sharp after annealing at 325$\\sp\\circ$C irrespective of the ambient atmosphere. Tensile cracks formed due to residual thermal stresses. There was no significant diffusion of Cr or Cu into PI on annealing at 325$\\sp\\circ$C for 48 hours.","Made available in DSpace on 2011-05-07T13:20:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210950.pdf: 7303176 bytes, checksum: cd79cf318eb09a4f62e1962df34934cd (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:53:30Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:24:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Preparation and characterization of metal/sapphire and metal/polyimide thin film laminates"]}]}],"canonical_facts":{"dc:contributor":["Birnbaum, Howard K."],"dc:creator":["Peddada, Satyanarayana Rao"],"dc:date":["2011-05-07T13:20:31Z","10000-01-01","1991"],"dc:description":["The aim of this research program was to understand the effect of thermal cycling on metal/insulator (sapphire and polyimide, PI) thin film laminates through studies of microstructure and microchemistry. Systems studied were: Ti/sapphire, Au/Cu/Ti/PI/Si and Cr/Cu/Cr/PI/Si. In the Ti/sapphire system, there was an additional interest to understand the effect of growth temperature on growth orientation and crystal quality of the films. The three material systems were characterized by a number of analytical techniques such as cross-section TEM (XTEM), plan-view TEM, SEM, Auger Electron Spectroscopy and X-ray diffraction. Of these, XTEM was the most extensively used.","In the Ti/sapphire system, single crystals formed in the temperature range 245-750$\\sp\\circ$C with the respective close packed planes and directions parallel. The crystal quality improved with an increase in the growth temperature up to 750$\\sp\\circ$C. The interface was observed to be sharp with no reaction layer formation even at a growth temperature of 950$\\sp\\circ$C. On annealing in D$\\sb2$ gas at 325$\\sp\\circ$C for 48 hours, the Ti film transformed to TiD$\\sb2,$ but no mechanical failures were observed.","In the Ti/PI system, on annealing in D$\\sb2$ gas at 325$\\sp\\circ$C for 48 hours, the interface remained sharp to a large extent, but a discontinuous reaction zone consisting of an oxide, $\\rm Ti\\sb5O\\sb9,$ formed at the interface due to a reaction between Ti and moisture in the PI. On annealing in D$\\sb2$ gas, spontaneous edge delamination was observed at the Ti/PI interface. There was no extensive diffusion of Ti or Cu into PI even in samples annealed at 400$\\sp\\circ$C for 48 hours.","In the Cr/PI system, the interface remained sharp after annealing at 325$\\sp\\circ$C irrespective of the ambient atmosphere. Tensile cracks formed due to residual thermal stresses. There was no significant diffusion of Cr or Cu into PI on annealing at 325$\\sp\\circ$C for 48 hours.","Made available in DSpace on 2011-05-07T13:20:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210950.pdf: 7303176 bytes, checksum: cd79cf318eb09a4f62e1962df34934cd (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:53:30Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:24:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9210950","(UMI)AAI9210950","http://hdl.handle.net/2142/21833"],"dc:language":["eng"],"dc:rights":["Copyright 1991 Peddada, Satyanarayana Rao"],"dc:subject":["Engineering, Metallurgy","Engineering, Materials Science"],"dc:title":["Preparation and characterization of metal/sapphire and metal/polyimide thin film laminates"],"dc:type":["text"],"thesis:degree_discipline":["Materials Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:18Z"}