{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21740"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21740","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth and characterization of gallium arsenide on silicon-on-sapphire and silicon","abstract":"Made available in DSpace on 2011-05-07T13:17:41Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010855.pdf: 3192198 bytes, checksum: b5aa62a7610c454f8872ee938fbf712c (MD5) Previous issue date: 1989","abstract_html":"Made available in DSpace on 2011-05-07T13:17:41Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010855.pdf: 3192198 bytes, checksum: b5aa62a7610c454f8872ee938fbf712c (MD5) Previous issue date: 1989","abstract_has_math":false,"creators":["Feng, Ming-Shiann"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Wert, C.A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:17:41Z","date_published":"2011-05-07T13:17:41Z","updated_at":"2026-07-22T22:25:18Z","subjects":["Engineering, Metallurgy"],"languages":["eng"],"rights":["Copyright 1989 Feng, Ming-Shiann"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9010855","(UMI)AAI9010855"],"render_values":[{"text":"AAI9010855","href":null,"code":true},{"text":"(UMI)AAI9010855","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21740","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Wert, C.A."]},{"key":"dc:creator","label":"Author","values":["Feng, Ming-Shiann"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:17:41Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Metallurgy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Feng, Ming-Shiann"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9010855","(UMI)AAI9010855","http://hdl.handle.net/2142/21740"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Made available in DSpace on 2011-05-07T13:17:41Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010855.pdf: 3192198 bytes, checksum: b5aa62a7610c454f8872ee938fbf712c (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:52:53Z Item is restricted indefinitely.","A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.","Restriction data tranferred 2014-07-01T11:24:23-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Growth and characterization of gallium arsenide on silicon-on-sapphire and silicon"]}]}],"canonical_facts":{"dc:contributor":["Wert, C.A."],"dc:creator":["Feng, Ming-Shiann"],"dc:date":["2011-05-07T13:17:41Z","10000-01-01","1989"],"dc:description":["Made available in DSpace on 2011-05-07T13:17:41Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010855.pdf: 3192198 bytes, checksum: b5aa62a7610c454f8872ee938fbf712c (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:52:53Z Item is restricted indefinitely.","A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.","Restriction data tranferred 2014-07-01T11:24:23-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9010855","(UMI)AAI9010855","http://hdl.handle.net/2142/21740"],"dc:language":["eng"],"dc:rights":["Copyright 1989 Feng, Ming-Shiann"],"dc:subject":["Engineering, Metallurgy"],"dc:title":["Growth and characterization of gallium arsenide on silicon-on-sapphire and silicon"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:18Z"}