{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21693"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21693","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reactions of thin film bilayers of nickel on silicon-germanium alloys","abstract":"Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, done during vacuum annealing of the bilayers, yields information about changes in the whole electrically conductive volume of the film structure. In-situ X-ray Photoelectron Spectroscopy (XPS) is also done during vacuum annealing of the bilayer structure, and yields information about phase changes that occur at the surface of the sample. The combination of cross-sectional Transmission Electron Microscopy (XTEM) and X-ray Diffraction (XRD) analyses of specifically heat treated samples with the in-situ measurements allows identification of: the first phase to form, the phase formation sequence, the kinetics of phase formation, and the primary diffusing species.","abstract_html":"Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, done during vacuum annealing of the bilayers, yields information about changes in the whole electrically conductive volume of the film structure. In-situ X-ray Photoelectron Spectroscopy (XPS) is also done during vacuum annealing of the bilayer structure, and yields information about phase changes that occur at the surface of the sample. The combination of cross-sectional Transmission Electron Microscopy (XTEM) and X-ray Diffraction (XRD) analyses of specifically heat treated samples with the in-situ measurements allows identification of: the first phase to form, the phase formation sequence, the kinetics of phase formation, and the primary diffusing species.","abstract_has_math":true,"creators":["Patterson, John Kenneth"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Engineering","degree_department":null,"school":null,"contributors":["Rockett, Angus A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:16:20Z","date_published":"2011-05-07T13:16:20Z","updated_at":"2026-07-22T22:25:18Z","subjects":["Engineering, Metallurgy","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1995 Patterson, John Kenneth"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543692","(UMI)AAI9543692"],"render_values":[{"text":"AAI9543692","href":null,"code":true},{"text":"(UMI)AAI9543692","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21693","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rockett, Angus A."]},{"key":"dc:creator","label":"Author","values":["Patterson, John Kenneth"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:16:20Z","10000-01-01","1995"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Metallurgy","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1995 Patterson, John Kenneth"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543692","(UMI)AAI9543692","http://hdl.handle.net/2142/21693"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, done during vacuum annealing of the bilayers, yields information about changes in the whole electrically conductive volume of the film structure. In-situ X-ray Photoelectron Spectroscopy (XPS) is also done during vacuum annealing of the bilayer structure, and yields information about phase changes that occur at the surface of the sample. The combination of cross-sectional Transmission Electron Microscopy (XTEM) and X-ray Diffraction (XRD) analyses of specifically heat treated samples with the in-situ measurements allows identification of: the first phase to form, the phase formation sequence, the kinetics of phase formation, and the primary diffusing species.","In the case of Ni-Si reactions, the final phase formed during annealing below 500$\\sp\\circ$C is NiSi through a diffusion limited reaction with an effective activation energy E$\\sb{\\rm a}$ = 1.75 eV. In the case of Ni-Ge reactions, the final phase formed during annealing below 500$\\sp\\circ$C is NiGe through a diffusion limited reaction with an effective activation energy E$\\sb{\\rm a}$ = 1.4 eV. In the case of Ni-Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ reactions (for x = 0.3, 0.7), the final phase formed during annealing below 500$\\sp\\circ$C is concluded to be the ternary solid solution phase Ni$\\sb{50}$(Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x})\\sb{50}$ where x ranges between approximately 0.8 and 0.4 from the 'top' to 'bottom' of the layer respectively. This layer is observed to form through a diffusion limited reaction initially with Ni-Ge like kinetics (E$\\sb{\\rm a}$ = 1.4 eV), and the final stages of formation have Ni-Si like kinetics (E$\\sb{\\rm a}$ = 1.8 eV). Nickel was concluded to be the primary diffusing species in all cases.","Made available in DSpace on 2011-05-07T13:16:20Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543692.pdf: 3434684 bytes, checksum: e734a1d6d15d461ae2daaccfc1478ef4 (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:52:34Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:24:13-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Reactions of thin film bilayers of nickel on silicon-germanium alloys"]}]}],"canonical_facts":{"dc:contributor":["Rockett, Angus A."],"dc:creator":["Patterson, John Kenneth"],"dc:date":["2011-05-07T13:16:20Z","10000-01-01","1995"],"dc:description":["Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, done during vacuum annealing of the bilayers, yields information about changes in the whole electrically conductive volume of the film structure. In-situ X-ray Photoelectron Spectroscopy (XPS) is also done during vacuum annealing of the bilayer structure, and yields information about phase changes that occur at the surface of the sample. The combination of cross-sectional Transmission Electron Microscopy (XTEM) and X-ray Diffraction (XRD) analyses of specifically heat treated samples with the in-situ measurements allows identification of: the first phase to form, the phase formation sequence, the kinetics of phase formation, and the primary diffusing species.","In the case of Ni-Si reactions, the final phase formed during annealing below 500$\\sp\\circ$C is NiSi through a diffusion limited reaction with an effective activation energy E$\\sb{\\rm a}$ = 1.75 eV. In the case of Ni-Ge reactions, the final phase formed during annealing below 500$\\sp\\circ$C is NiGe through a diffusion limited reaction with an effective activation energy E$\\sb{\\rm a}$ = 1.4 eV. In the case of Ni-Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x}$ reactions (for x = 0.3, 0.7), the final phase formed during annealing below 500$\\sp\\circ$C is concluded to be the ternary solid solution phase Ni$\\sb{50}$(Si$\\sb{\\rm 1-x}$Ge$\\sb{\\rm x})\\sb{50}$ where x ranges between approximately 0.8 and 0.4 from the 'top' to 'bottom' of the layer respectively. This layer is observed to form through a diffusion limited reaction initially with Ni-Ge like kinetics (E$\\sb{\\rm a}$ = 1.4 eV), and the final stages of formation have Ni-Si like kinetics (E$\\sb{\\rm a}$ = 1.8 eV). Nickel was concluded to be the primary diffusing species in all cases.","Made available in DSpace on 2011-05-07T13:16:20Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543692.pdf: 3434684 bytes, checksum: e734a1d6d15d461ae2daaccfc1478ef4 (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:52:34Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:24:13-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9543692","(UMI)AAI9543692","http://hdl.handle.net/2142/21693"],"dc:language":["eng"],"dc:rights":["Copyright 1995 Patterson, John Kenneth"],"dc:subject":["Engineering, Metallurgy","Engineering, Materials Science"],"dc:title":["Reactions of thin film bilayers of nickel on silicon-germanium alloys"],"dc:type":["text"],"thesis:degree_discipline":["Materials Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:18Z"}