{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21630"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21630","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Phonon-assisted laser operation of III-V semiconductor quantum well heterostructures","abstract":"Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs), strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.15) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs. If the QWH sample is heat sunk in metal under a sapphire window, with reflecting metal folded upward along the cleaved edges, the resonator Q across the sample is high, and laser operation across the sample on confined-particle states and along the sample on a phonon sideband is observed. If the sample edges across the sample are left uncoated (weakly reflecting, low Q), only phonon-assisted laser operation is observed. Comparison of the high-Q and the low-Q photo-excitation configurations, as well as the abrupt turn-on of laser operation in a narrow spectral range one phonon energy below the lowest confined-particle state, leads to unambiguous identification of phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWHs, strained layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.5) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs.","abstract_html":"Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs), strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.15) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs. If the QWH sample is heat sunk in metal under a sapphire window, with reflecting metal folded upward along the cleaved edges, the resonator Q across the sample is high, and laser operation across the sample on confined-particle states and along the sample on a phonon sideband is observed. If the sample edges across the sample are left uncoated (weakly reflecting, low Q), only phonon-assisted laser operation is observed. Comparison of the high-Q and the low-Q photo-excitation configurations, as well as the abrupt turn-on of laser operation in a narrow spectral range one phonon energy below the lowest confined-particle state, leads to unambiguous identification of phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWHs, strained layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.5) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs.","abstract_has_math":true,"creators":["Nam, Derek Wusi"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:14:25Z","date_published":"2011-05-07T13:14:25Z","updated_at":"2026-07-22T22:25:18Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1990 Nam, Derek Wusi"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026278","(UMI)AAI9026278"],"render_values":[{"text":"AAI9026278","href":null,"code":true},{"text":"(UMI)AAI9026278","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21630","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Nam, Derek Wusi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:14:25Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Nam, Derek Wusi"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026278","(UMI)AAI9026278","http://hdl.handle.net/2142/21630"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs), strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.15) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs. If the QWH sample is heat sunk in metal under a sapphire window, with reflecting metal folded upward along the cleaved edges, the resonator Q across the sample is high, and laser operation across the sample on confined-particle states and along the sample on a phonon sideband is observed. If the sample edges across the sample are left uncoated (weakly reflecting, low Q), only phonon-assisted laser operation is observed. Comparison of the high-Q and the low-Q photo-excitation configurations, as well as the abrupt turn-on of laser operation in a narrow spectral range one phonon energy below the lowest confined-particle state, leads to unambiguous identification of phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWHs, strained layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.5) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs.","Made available in DSpace on 2011-05-07T13:14:25Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9026278.pdf: 2489810 bytes, checksum: 681f24742ed2f8eb828e1a381f901315 (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:52:09Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:23:58-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Phonon-assisted laser operation of III-V semiconductor quantum well heterostructures"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Nam, Derek Wusi"],"dc:date":["2011-05-07T13:14:25Z","10000-01-01","1990"],"dc:description":["Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs), strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.15) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs. If the QWH sample is heat sunk in metal under a sapphire window, with reflecting metal folded upward along the cleaved edges, the resonator Q across the sample is high, and laser operation across the sample on confined-particle states and along the sample on a phonon sideband is observed. If the sample edges across the sample are left uncoated (weakly reflecting, low Q), only phonon-assisted laser operation is observed. Comparison of the high-Q and the low-Q photo-excitation configurations, as well as the abrupt turn-on of laser operation in a narrow spectral range one phonon energy below the lowest confined-particle state, leads to unambiguous identification of phonon-assisted laser operation of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWHs, strained layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As (x $\\sim$ 0.5) QWHs, and Al$\\sb{0.5}$(In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P (x $\\sim$ 0.2) QWHs.","Made available in DSpace on 2011-05-07T13:14:25Z (GMT). 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