{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21142"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21142","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Charge control in acoustic charge transport devices","abstract":"Acoustic charge transport (ACT) devices utilize the acoustoelectric effect in a piezoelectric semiconductor, particularly GaAs, to create buried channel charge transfer devices capable of signal processing functions, especially transversal filtering. Charge control in ACT devices concerns the control and accounting of charge with the goal of preserving signal integrity. Two key aspects of charge control are the influence of perturbing channel potentials on the ACT properties, which are principally charge capacity and transfer efficiency, and the charge storage process, which is the inhibition of ACT via barrier potentials applied to surface electrodes. Several charge control topics are investigated in this work using experimental devices and numerical modeling.","abstract_html":"Acoustic charge transport (ACT) devices utilize the acoustoelectric effect in a piezoelectric semiconductor, particularly GaAs, to create buried channel charge transfer devices capable of signal processing functions, especially transversal filtering. Charge control in ACT devices concerns the control and accounting of charge with the goal of preserving signal integrity. Two key aspects of charge control are the influence of perturbing channel potentials on the ACT properties, which are principally charge capacity and transfer efficiency, and the charge storage process, which is the inhibition of ACT via barrier potentials applied to surface electrodes. Several charge control topics are investigated in this work using experimental devices and numerical modeling.","abstract_has_math":false,"creators":["Schmukler, Bruce C."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Hunsinger, Bill J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:59:37Z","date_published":"2011-05-07T12:59:37Z","updated_at":"2026-07-22T22:25:17Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1989 Schmukler, Bruce C."],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011103","(UMI)AAI9011103"],"render_values":[{"text":"AAI9011103","href":null,"code":true},{"text":"(UMI)AAI9011103","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21142","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hunsinger, Bill J."]},{"key":"dc:creator","label":"Author","values":["Schmukler, Bruce C."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:59:37Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Schmukler, Bruce C."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011103","(UMI)AAI9011103","http://hdl.handle.net/2142/21142"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Acoustic charge transport (ACT) devices utilize the acoustoelectric effect in a piezoelectric semiconductor, particularly GaAs, to create buried channel charge transfer devices capable of signal processing functions, especially transversal filtering. Charge control in ACT devices concerns the control and accounting of charge with the goal of preserving signal integrity. Two key aspects of charge control are the influence of perturbing channel potentials on the ACT properties, which are principally charge capacity and transfer efficiency, and the charge storage process, which is the inhibition of ACT via barrier potentials applied to surface electrodes. Several charge control topics are investigated in this work using experimental devices and numerical modeling.","The effects of static barrier potentials on ACT properties are investigated and an empirical model predicting charge capacity loss as a function of barrier field is developed. A device with several differently sized surface metallization gratings is used to investigate the effect of gratings on ACT properties. The dynamics of charge storage are investigated with regard to storage voltage, storage mode charge capacity (called storage capacity), and frequency response. The concept of double-packet charge storage is introduced and the properties of single-packet, double-packet and multipacket charge storage are investigated and compared. The key limiting factors regarding storage capacity are identified. Finally, numerical techniques to simulate ACT charge capacities and storage capacities are investigated, and a new method known as charge screening is introduced.","Made available in DSpace on 2011-05-07T12:59:37Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9011103.pdf: 4960672 bytes, checksum: 5ef0ca020edb60a439f43c119f673d57 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:48:46Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:22:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Charge control in acoustic charge transport devices"]}]}],"canonical_facts":{"dc:contributor":["Hunsinger, Bill J."],"dc:creator":["Schmukler, Bruce C."],"dc:date":["2011-05-07T12:59:37Z","10000-01-01","1989"],"dc:description":["Acoustic charge transport (ACT) devices utilize the acoustoelectric effect in a piezoelectric semiconductor, particularly GaAs, to create buried channel charge transfer devices capable of signal processing functions, especially transversal filtering. Charge control in ACT devices concerns the control and accounting of charge with the goal of preserving signal integrity. Two key aspects of charge control are the influence of perturbing channel potentials on the ACT properties, which are principally charge capacity and transfer efficiency, and the charge storage process, which is the inhibition of ACT via barrier potentials applied to surface electrodes. Several charge control topics are investigated in this work using experimental devices and numerical modeling.","The effects of static barrier potentials on ACT properties are investigated and an empirical model predicting charge capacity loss as a function of barrier field is developed. A device with several differently sized surface metallization gratings is used to investigate the effect of gratings on ACT properties. The dynamics of charge storage are investigated with regard to storage voltage, storage mode charge capacity (called storage capacity), and frequency response. The concept of double-packet charge storage is introduced and the properties of single-packet, double-packet and multipacket charge storage are investigated and compared. The key limiting factors regarding storage capacity are identified. Finally, numerical techniques to simulate ACT charge capacities and storage capacities are investigated, and a new method known as charge screening is introduced.","Made available in DSpace on 2011-05-07T12:59:37Z (GMT). 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