{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20741"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20741","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Metal-semiconductor-metal photodetectors for optoelectric receiver applications","abstract":"Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","abstract_html":"Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","abstract_has_math":false,"creators":["Seo, Jong-Wook"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Adesida, Ilesanmi"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:47:55Z","date_published":"2011-05-07T12:47:55Z","updated_at":"2026-07-22T22:25:16Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1993 Seo, Jong-Wook"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9411779","(UMI)AAI9411779"],"render_values":[{"text":"AAI9411779","href":null,"code":true},{"text":"(UMI)AAI9411779","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20741","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Adesida, Ilesanmi"]},{"key":"dc:creator","label":"Author","values":["Seo, Jong-Wook"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:47:55Z","10000-01-01","1993"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1993 Seo, Jong-Wook"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9411779","(UMI)AAI9411779","http://hdl.handle.net/2142/20741"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","It has been found that the barrier height lowering observed in reverse-biased Schottky junction is due mainly to the change in electrical potential across the interfacial layer at the metal-semiconductor contact. The voltage dependence of barrier height is described, and excellent agreement with experimental data is shown. The surface state density and interfacial layer thickness of a (Ti/Au) /n-InAlAs Schottky junction are estimated from its I-V characteristics. The expressions of the barrier heights of junctions in a metal-semiconductor-metal photodiode (MSMPD) are derived, and excellent agreement with experiment is shown. The adjustment of barrier height and dark current by annealing is investigated based on the theory. The merit of transparent electrodes for MSMPD in an optoelectronic-integrated-circuit (OEIC) is described, and it is shown that the signal-to-noise-ratio (SNR) of a receiver can be improved by the employment of transparent electrodes.","The design, fabrication, and characterization of MSMPDs for long- $(\\lambda = 1.3\\ \\mu$m) and short-wavelength $(\\lambda = 0.85\\ \\mu$m) applications are presented in detail. The deposition by RF magnetron sputtering and etching by reactive-ion-etching (RIE) of ITO film are described. It has been found that H$\\sb2$ incorporation in an Ar plasma during ITO deposition improves the optical transmittance of the film at $\\lambda = 1.3\\ \\mu$m. Responsivity was doubled by ITO electrodes and an anti-reflection (AR) coating. Bandwidths (3-dB) of 22 GHz and 16.6 GHz were obtained for long- and short-wavelength MSMPD, respectively. A 3-dB bandwidth of 6 GHz was obtained for both long-and short-wavelength ITO-MSMPDs. It is shown that the wide band-gap barrier enhancement layer reduces optical responsivity by capturing carriers at the heterointerface. The effects of surface and surface passivation on MSMPD performance are studied. The characterization of OEIC receiver with a transimpedance amplifier is described.","Made available in DSpace on 2011-05-07T12:47:55Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9411779.pdf: 8259070 bytes, checksum: 1bfac81d3d3bf2f4d5471c7f52af6a98 (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:45:57Z Item is restricted indefinitely.","U of I Only"]},{"key":"dc:title","label":"Title","values":["Metal-semiconductor-metal photodetectors for optoelectric receiver applications"]}]}],"canonical_facts":{"dc:contributor":["Adesida, Ilesanmi"],"dc:creator":["Seo, Jong-Wook"],"dc:date":["2011-05-07T12:47:55Z","10000-01-01","1993"],"dc:description":["Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","It has been found that the barrier height lowering observed in reverse-biased Schottky junction is due mainly to the change in electrical potential across the interfacial layer at the metal-semiconductor contact. The voltage dependence of barrier height is described, and excellent agreement with experimental data is shown. The surface state density and interfacial layer thickness of a (Ti/Au) /n-InAlAs Schottky junction are estimated from its I-V characteristics. The expressions of the barrier heights of junctions in a metal-semiconductor-metal photodiode (MSMPD) are derived, and excellent agreement with experiment is shown. The adjustment of barrier height and dark current by annealing is investigated based on the theory. The merit of transparent electrodes for MSMPD in an optoelectronic-integrated-circuit (OEIC) is described, and it is shown that the signal-to-noise-ratio (SNR) of a receiver can be improved by the employment of transparent electrodes.","The design, fabrication, and characterization of MSMPDs for long- $(\\lambda = 1.3\\ \\mu$m) and short-wavelength $(\\lambda = 0.85\\ \\mu$m) applications are presented in detail. The deposition by RF magnetron sputtering and etching by reactive-ion-etching (RIE) of ITO film are described. It has been found that H$\\sb2$ incorporation in an Ar plasma during ITO deposition improves the optical transmittance of the film at $\\lambda = 1.3\\ \\mu$m. Responsivity was doubled by ITO electrodes and an anti-reflection (AR) coating. Bandwidths (3-dB) of 22 GHz and 16.6 GHz were obtained for long- and short-wavelength MSMPD, respectively. A 3-dB bandwidth of 6 GHz was obtained for both long-and short-wavelength ITO-MSMPDs. It is shown that the wide band-gap barrier enhancement layer reduces optical responsivity by capturing carriers at the heterointerface. The effects of surface and surface passivation on MSMPD performance are studied. The characterization of OEIC receiver with a transimpedance amplifier is described.","Made available in DSpace on 2011-05-07T12:47:55Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9411779.pdf: 8259070 bytes, checksum: 1bfac81d3d3bf2f4d5471c7f52af6a98 (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:45:57Z Item is restricted indefinitely.","U of I Only"],"dc:identifier":["AAI9411779","(UMI)AAI9411779","http://hdl.handle.net/2142/20741"],"dc:language":["eng"],"dc:rights":["Copyright 1993 Seo, Jong-Wook"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"dc:title":["Metal-semiconductor-metal photodetectors for optoelectric receiver applications"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:16Z"}