{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20595"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20595","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Full band ensemble Monte Carlo simulation of silicon devices","abstract":"A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.","abstract_html":"A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.","abstract_has_math":false,"creators":["Lee, Christopher HeeChang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Ravaioli, Umberto"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:43:44Z","date_published":"2011-05-07T12:43:44Z","updated_at":"2026-07-22T22:25:16Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1994 Lee, Christopher HeeChang"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9416391","(UMI)AAI9416391"],"render_values":[{"text":"AAI9416391","href":null,"code":true},{"text":"(UMI)AAI9416391","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20595","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Ravaioli, Umberto"]},{"key":"dc:creator","label":"Author","values":["Lee, Christopher HeeChang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:43:44Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Lee, Christopher HeeChang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9416391","(UMI)AAI9416391","http://hdl.handle.net/2142/20595"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.","Made available in DSpace on 2011-05-07T12:43:44Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9416391.pdf: 2835180 bytes, checksum: e8445f7dd85fc4225e1187a63ff6c0cc (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:44:57Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:19:51-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Full band ensemble Monte Carlo simulation of silicon devices"]}]}],"canonical_facts":{"dc:contributor":["Ravaioli, Umberto"],"dc:creator":["Lee, Christopher HeeChang"],"dc:date":["2011-05-07T12:43:44Z","10000-01-01","1994"],"dc:description":["A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. 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