{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20324"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20324","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of III-V semiconductor lasers on silicon","abstract":"The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V substrates must be overcome before III-V lasers grown on Si become reliable. In the experiments described here many different methods are used to try to improve the reliability of III-V lasers grown on Si.","abstract_html":"The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V substrates must be overcome before III-V lasers grown on Si become reliable. In the experiments described here many different methods are used to try to improve the reliability of III-V lasers grown on Si.","abstract_has_math":false,"creators":["Plano, William Edward"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:35:59Z","date_published":"2011-05-07T12:35:59Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1990 Plano, William Edward"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021744","(UMI)AAI9021744"],"render_values":[{"text":"AAI9021744","href":null,"code":true},{"text":"(UMI)AAI9021744","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20324","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Plano, William Edward"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:35:59Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Plano, William Edward"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021744","(UMI)AAI9021744","http://hdl.handle.net/2142/20324"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V substrates must be overcome before III-V lasers grown on Si become reliable. In the experiments described here many different methods are used to try to improve the reliability of III-V lasers grown on Si.","Data are presented showing that impurity induced layer disordering (IILD) can be greatly accelerated when an abundance of dislocations are present. The high dislocation density of III-V materials grown on Si makes this a problem that cannot be overlooked. This problem can be minimized but it puts limits on the kind of thermal processing that can be done to a III-V laser grown on Si. Perhaps the most difficult problem encountered when growing III-V lasers on Si is dislocations. If the dislocation density can be reduced, then lasers grown on Si should become more reliable. Several methods of reducing the dislocation density of III-V lasers grown on Si have been tried. Data are presented showing the Zn diffusions, strained layer superlattices, and lattice matched buffer layers are all somewhat effective at lowering the dislocation density. The high dislocation density of III-V lasers grown on Si makes InGaAs strained layer active lasers on Si an unlikely possibility because the dislocations tend to accumulate at the active region of these structures where dislocations are the most damaging.","Growth of III-V lasers on patterned GaAs-on-Si wafers has also been investigated. Growing over a selective area should reduce some strain and possibly lower the dislocation density. Data are presented showing that the dislocation density can be reduced by selective area epitaxy. But other problems arise when growing over a selective area and make device fabrication more difficult.","Made available in DSpace on 2011-05-07T12:35:59Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021744.pdf: 2606862 bytes, checksum: ba3efb491e1291847e5e74a9bf213a39 (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:43:08Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:50-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Growth of III-V semiconductor lasers on silicon"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Plano, William Edward"],"dc:date":["2011-05-07T12:35:59Z","10000-01-01","1990"],"dc:description":["The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V substrates must be overcome before III-V lasers grown on Si become reliable. In the experiments described here many different methods are used to try to improve the reliability of III-V lasers grown on Si.","Data are presented showing that impurity induced layer disordering (IILD) can be greatly accelerated when an abundance of dislocations are present. The high dislocation density of III-V materials grown on Si makes this a problem that cannot be overlooked. This problem can be minimized but it puts limits on the kind of thermal processing that can be done to a III-V laser grown on Si. Perhaps the most difficult problem encountered when growing III-V lasers on Si is dislocations. If the dislocation density can be reduced, then lasers grown on Si should become more reliable. Several methods of reducing the dislocation density of III-V lasers grown on Si have been tried. Data are presented showing the Zn diffusions, strained layer superlattices, and lattice matched buffer layers are all somewhat effective at lowering the dislocation density. The high dislocation density of III-V lasers grown on Si makes InGaAs strained layer active lasers on Si an unlikely possibility because the dislocations tend to accumulate at the active region of these structures where dislocations are the most damaging.","Growth of III-V lasers on patterned GaAs-on-Si wafers has also been investigated. Growing over a selective area should reduce some strain and possibly lower the dislocation density. Data are presented showing that the dislocation density can be reduced by selective area epitaxy. But other problems arise when growing over a selective area and make device fabrication more difficult.","Made available in DSpace on 2011-05-07T12:35:59Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021744.pdf: 2606862 bytes, checksum: ba3efb491e1291847e5e74a9bf213a39 (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:43:08Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:50-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9021744","(UMI)AAI9021744","http://hdl.handle.net/2142/20324"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Plano, William Edward"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Growth of III-V semiconductor lasers on silicon"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}