{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20086"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20086","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide","abstract":"Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\\sp\\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers.","abstract_html":"Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\\sp\\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers.","abstract_has_math":true,"creators":["Chyi, Jen-Inn"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:28:22Z","date_published":"2011-05-07T12:28:22Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1990 Chyi, Jen-Inn"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114207","(UMI)AAI9114207"],"render_values":[{"text":"AAI9114207","href":null,"code":true},{"text":"(UMI)AAI9114207","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20086","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Chyi, Jen-Inn"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:28:22Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Chyi, Jen-Inn"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114207","(UMI)AAI9114207","http://hdl.handle.net/2142/20086"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\\sp\\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers.","Indium antimonide p$\\sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.","Made available in DSpace on 2011-05-07T12:28:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114207.pdf: 4612963 bytes, checksum: 3f49f18ae997f12e68ba9d2d3ea69938 (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:56-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide"]}]}],"canonical_facts":{"dc:creator":["Chyi, Jen-Inn"],"dc:date":["2011-05-07T12:28:22Z","10000-01-01","1990"],"dc:description":["Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\\sp\\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers.","Indium antimonide p$\\sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.","Made available in DSpace on 2011-05-07T12:28:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114207.pdf: 4612963 bytes, checksum: 3f49f18ae997f12e68ba9d2d3ea69938 (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:56-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9114207","(UMI)AAI9114207","http://hdl.handle.net/2142/20086"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Chyi, Jen-Inn"],"dc:subject":["Engineering, Electronics and Electrical","Engineering, Materials Science"],"dc:title":["Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}