{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19907"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19907","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide","abstract":"\"The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first \"\"working\"\" mathematical model of surface-interface states in GaAs.\"","abstract_html":""The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first ""working"" mathematical model of surface-interface states in GaAs."","abstract_has_math":false,"creators":["Miller, William Raymond"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:22:30Z","date_published":"2011-05-07T12:22:30Z","updated_at":"2026-07-22T22:25:14Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1991 Miller, William Raymond"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210918","(UMI)AAI9210918"],"render_values":[{"text":"AAI9210918","href":null,"code":true},{"text":"(UMI)AAI9210918","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19907","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Miller, William Raymond"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:22:30Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1991 Miller, William Raymond"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210918","(UMI)AAI9210918","http://hdl.handle.net/2142/19907"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first \"\"working\"\" mathematical model of surface-interface states in GaAs.\"","Made available in DSpace on 2011-05-07T12:22:30Z (GMT). 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The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first \"\"working\"\" mathematical model of surface-interface states in GaAs.\"","Made available in DSpace on 2011-05-07T12:22:30Z (GMT). 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