{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19556"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19556","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Hydrogen concentration and temperature affect the 1/f resistance noise in niobium films","abstract":"\"The 1/f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction phenomena such as the Gorsky effect and the Snoek effect. Near 150K, there is \"\"hopping noise\"\" caused by the movement of hydrogen ions between nearby lattice locations. Near 300K, there is \"\"number fluctuation noise\"\" due to ions diffusing in and out of the sample during a noise measurement. The number of ions within the sample fluctuates, changing the amount of electron scattering and the resistance. Both hopping noise and number fluctuations are eliminated if an electric field drains H ions out of the sample. The intensity and temperature dependence of the hopping noise and the number fluctuation noise were compared for five samples. This comparison gives information about hydrogen ion motion and film quality. At frequencies above the number fluctuation noise, there was 1/f noise with a less specific origin. This noise is reduced, but not eliminated by the application of a DC electric field. This noise showed non-Gaussian effects in some samples. The non-Gaussian noise and other effects suggest that the noise involves a complex interaction between the H ions and the Nb lattice in which the motion of ions is correlated over 10nm.\"","abstract_html":""The 1/f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction phenomena such as the Gorsky effect and the Snoek effect. Near 150K, there is ""hopping noise"" caused by the movement of hydrogen ions between nearby lattice locations. Near 300K, there is ""number fluctuation noise"" due to ions diffusing in and out of the sample during a noise measurement. The number of ions within the sample fluctuates, changing the amount of electron scattering and the resistance. Both hopping noise and number fluctuations are eliminated if an electric field drains H ions out of the sample. The intensity and temperature dependence of the hopping noise and the number fluctuation noise were compared for five samples. This comparison gives information about hydrogen ion motion and film quality. At frequencies above the number fluctuation noise, there was 1/f noise with a less specific origin. This noise is reduced, but not eliminated by the application of a DC electric field. This noise showed non-Gaussian effects in some samples. The non-Gaussian noise and other effects suggest that the noise involves a complex interaction between the H ions and the Nb lattice in which the motion of ions is correlated over 10nm."","abstract_has_math":false,"creators":["Nevins, Bryan Dexter"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Weissman, Michael B."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:11:19Z","date_published":"2011-05-07T12:11:19Z","updated_at":"2026-07-22T22:25:14Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1991 Nevins, Bryan Dexter"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210937","(UMI)AAI9210937"],"render_values":[{"text":"AAI9210937","href":null,"code":true},{"text":"(UMI)AAI9210937","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19556","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Weissman, Michael B."]},{"key":"dc:creator","label":"Author","values":["Nevins, Bryan Dexter"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:11:19Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1991 Nevins, Bryan Dexter"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9210937","(UMI)AAI9210937","http://hdl.handle.net/2142/19556"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"The 1/f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction phenomena such as the Gorsky effect and the Snoek effect. Near 150K, there is \"\"hopping noise\"\" caused by the movement of hydrogen ions between nearby lattice locations. Near 300K, there is \"\"number fluctuation noise\"\" due to ions diffusing in and out of the sample during a noise measurement. The number of ions within the sample fluctuates, changing the amount of electron scattering and the resistance. Both hopping noise and number fluctuations are eliminated if an electric field drains H ions out of the sample. The intensity and temperature dependence of the hopping noise and the number fluctuation noise were compared for five samples. This comparison gives information about hydrogen ion motion and film quality. At frequencies above the number fluctuation noise, there was 1/f noise with a less specific origin. This noise is reduced, but not eliminated by the application of a DC electric field. This noise showed non-Gaussian effects in some samples. The non-Gaussian noise and other effects suggest that the noise involves a complex interaction between the H ions and the Nb lattice in which the motion of ions is correlated over 10nm.\"","Made available in DSpace on 2011-05-07T12:11:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210937.pdf: 3584837 bytes, checksum: 41f82c055fb9028d84e81dd98d0dcfc2 (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:37:50Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:15:38-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Hydrogen concentration and temperature affect the 1/f resistance noise in niobium films"]}]}],"canonical_facts":{"dc:contributor":["Weissman, Michael B."],"dc:creator":["Nevins, Bryan Dexter"],"dc:date":["2011-05-07T12:11:19Z","10000-01-01","1991"],"dc:description":["\"The 1/f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction phenomena such as the Gorsky effect and the Snoek effect. Near 150K, there is \"\"hopping noise\"\" caused by the movement of hydrogen ions between nearby lattice locations. Near 300K, there is \"\"number fluctuation noise\"\" due to ions diffusing in and out of the sample during a noise measurement. The number of ions within the sample fluctuates, changing the amount of electron scattering and the resistance. Both hopping noise and number fluctuations are eliminated if an electric field drains H ions out of the sample. The intensity and temperature dependence of the hopping noise and the number fluctuation noise were compared for five samples. This comparison gives information about hydrogen ion motion and film quality. At frequencies above the number fluctuation noise, there was 1/f noise with a less specific origin. This noise is reduced, but not eliminated by the application of a DC electric field. This noise showed non-Gaussian effects in some samples. The non-Gaussian noise and other effects suggest that the noise involves a complex interaction between the H ions and the Nb lattice in which the motion of ions is correlated over 10nm.\"","Made available in DSpace on 2011-05-07T12:11:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210937.pdf: 3584837 bytes, checksum: 41f82c055fb9028d84e81dd98d0dcfc2 (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:37:50Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:15:38-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9210937","(UMI)AAI9210937","http://hdl.handle.net/2142/19556"],"dc:language":["eng"],"dc:rights":["Copyright 1991 Nevins, Bryan Dexter"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Hydrogen concentration and temperature affect the 1/f resistance noise in niobium films"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:14Z"}