{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19396"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19396","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fabrication of nanostructures with the scanning tunneling microscope and the laser","abstract":"A technique of making nanometer-scale structures on surfaces is developed. The technique combines two of the most advanced technologies: the laser and the scanning tunneling microscope (STM). Laser radiation is used to break the chemical bonds of gas-phase trimethylaluminum molecules to free aluminum atoms in the region of the tunneling gap of the STM. The atoms are subsequently selectively excited and ionized. The ions are then driven softly toward the surface where they are deposited by the field in the tunneling gap of the microscope. Deposits as small as 1nmx1nm were made on graphite substrates. The technique is also capable of addressable erasing.","abstract_html":"A technique of making nanometer-scale structures on surfaces is developed. The technique combines two of the most advanced technologies: the laser and the scanning tunneling microscope (STM). Laser radiation is used to break the chemical bonds of gas-phase trimethylaluminum molecules to free aluminum atoms in the region of the tunneling gap of the STM. The atoms are subsequently selectively excited and ionized. The ions are then driven softly toward the surface where they are deposited by the field in the tunneling gap of the microscope. Deposits as small as 1nmx1nm were made on graphite substrates. The technique is also capable of addressable erasing.","abstract_has_math":false,"creators":["Yau, Siu-Tung"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Nayfeh, Munir H."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:06:14Z","date_published":"2011-05-07T12:06:14Z","updated_at":"2026-07-22T22:25:12Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1991 Yau, Siu-Tung"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9136773","(UMI)AAI9136773"],"render_values":[{"text":"AAI9136773","href":null,"code":true},{"text":"(UMI)AAI9136773","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19396","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Nayfeh, Munir H."]},{"key":"dc:creator","label":"Author","values":["Yau, Siu-Tung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:06:14Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1991 Yau, Siu-Tung"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9136773","(UMI)AAI9136773","http://hdl.handle.net/2142/19396"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A technique of making nanometer-scale structures on surfaces is developed. The technique combines two of the most advanced technologies: the laser and the scanning tunneling microscope (STM). Laser radiation is used to break the chemical bonds of gas-phase trimethylaluminum molecules to free aluminum atoms in the region of the tunneling gap of the STM. The atoms are subsequently selectively excited and ionized. The ions are then driven softly toward the surface where they are deposited by the field in the tunneling gap of the microscope. Deposits as small as 1nmx1nm were made on graphite substrates. The technique is also capable of addressable erasing.","The more familiar technique of using voltage pulses applied to the STM tunneling tip to fabricate nanostructures was also studied. Both deposits and holes were made. The voltage threshold and other features of the fabrication process were studied as a function of the tip-surface biasing voltage and the tunneling current. The studies show that the structures were formed by bombardment of the graphite surface by ions produced by electron-assisted field ionization localized in the region of the tunneling gap. This technique was combined with the STM-Laser technique to modify surfaces.","Made available in DSpace on 2011-05-07T12:06:14Z (GMT). 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The technique combines two of the most advanced technologies: the laser and the scanning tunneling microscope (STM). Laser radiation is used to break the chemical bonds of gas-phase trimethylaluminum molecules to free aluminum atoms in the region of the tunneling gap of the STM. The atoms are subsequently selectively excited and ionized. The ions are then driven softly toward the surface where they are deposited by the field in the tunneling gap of the microscope. Deposits as small as 1nmx1nm were made on graphite substrates. The technique is also capable of addressable erasing.","The more familiar technique of using voltage pulses applied to the STM tunneling tip to fabricate nanostructures was also studied. Both deposits and holes were made. The voltage threshold and other features of the fabrication process were studied as a function of the tip-surface biasing voltage and the tunneling current. The studies show that the structures were formed by bombardment of the graphite surface by ions produced by electron-assisted field ionization localized in the region of the tunneling gap. This technique was combined with the STM-Laser technique to modify surfaces.","Made available in DSpace on 2011-05-07T12:06:14Z (GMT). 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