{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19176"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19176","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Theoretical analysis of electronic properties and transport phenomena in semiconductor nanostructures","abstract":"Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for complementing fabrication technology due to the predictive capabilities of device modeling and its ability to guide the design process. This thesis investigates novel electronic and transport properties of quantized devices and develops various methods for their simulation. Both the dissipative and coherent regimes of quantum transport are considered.","abstract_html":"Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for complementing fabrication technology due to the predictive capabilities of device modeling and its ability to guide the design process. This thesis investigates novel electronic and transport properties of quantized devices and develops various methods for their simulation. Both the dissipative and coherent regimes of quantum transport are considered.","abstract_has_math":false,"creators":["Jovanovic, Dejan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Leburton, Jean-Pierre"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T11:59:16Z","date_published":"2011-05-07T11:59:16Z","updated_at":"2026-07-22T22:25:12Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1994 Jovanovic, Dejan"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9416382","(UMI)AAI9416382"],"render_values":[{"text":"AAI9416382","href":null,"code":true},{"text":"(UMI)AAI9416382","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19176","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leburton, Jean-Pierre"]},{"key":"dc:creator","label":"Author","values":["Jovanovic, Dejan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T11:59:16Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Jovanovic, Dejan"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9416382","(UMI)AAI9416382","http://hdl.handle.net/2142/19176"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for complementing fabrication technology due to the predictive capabilities of device modeling and its ability to guide the design process. This thesis investigates novel electronic and transport properties of quantized devices and develops various methods for their simulation. Both the dissipative and coherent regimes of quantum transport are considered.","A three-dimensional self-consistent Schrodinger-Poisson simulation is used to investigate a single-electron tunneling structure operating under linear response conditions. The device considered contains multiple regions of quantum dimensionality which are comprehensively treated in the self-consistent solver. Coherent transport characteristics are evaluated using an interacting form of the Landauer formula. The model incorporates exchange-correlation effects and implicitly accounts for the Coulomb blockade of resonant tunneling. The theoretical transport characteristics of the structure exhibit the same general oscillatory properties as the experimental data and point to the prominence of interface disorder in establishing conductance amplitudes.","Transport characteristics under dissipative conditions are evaluated using a Monte Carlo calculation tailored to quantized structures. A quantum wire serves as the model device and the influence of polar optical phonon (POP) scattering is examined for various biasing and confinement topologies. Several novel effects associated with resonant intersubband optical phonon scattering are revealed including intersubband population inversions and negative differential transconductances. Experimental observation of the latter effect has been confirmed through self-consistent determination of the electronic spectrum in the experimental device. Finally, an investigation is made of low-temperature spatial velocity oscillations due to quasi-coherent POP emission.","Made available in DSpace on 2011-05-07T11:59:16Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9416382.pdf: 3808950 bytes, checksum: c63b3e1b5b8adc2a59a729bf4bd3b8b7 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:35:10Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Theoretical analysis of electronic properties and transport phenomena in semiconductor nanostructures"]}]}],"canonical_facts":{"dc:contributor":["Leburton, Jean-Pierre"],"dc:creator":["Jovanovic, Dejan"],"dc:date":["2011-05-07T11:59:16Z","10000-01-01","1994"],"dc:description":["Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for complementing fabrication technology due to the predictive capabilities of device modeling and its ability to guide the design process. This thesis investigates novel electronic and transport properties of quantized devices and develops various methods for their simulation. Both the dissipative and coherent regimes of quantum transport are considered.","A three-dimensional self-consistent Schrodinger-Poisson simulation is used to investigate a single-electron tunneling structure operating under linear response conditions. The device considered contains multiple regions of quantum dimensionality which are comprehensively treated in the self-consistent solver. Coherent transport characteristics are evaluated using an interacting form of the Landauer formula. The model incorporates exchange-correlation effects and implicitly accounts for the Coulomb blockade of resonant tunneling. The theoretical transport characteristics of the structure exhibit the same general oscillatory properties as the experimental data and point to the prominence of interface disorder in establishing conductance amplitudes.","Transport characteristics under dissipative conditions are evaluated using a Monte Carlo calculation tailored to quantized structures. A quantum wire serves as the model device and the influence of polar optical phonon (POP) scattering is examined for various biasing and confinement topologies. Several novel effects associated with resonant intersubband optical phonon scattering are revealed including intersubband population inversions and negative differential transconductances. Experimental observation of the latter effect has been confirmed through self-consistent determination of the electronic spectrum in the experimental device. Finally, an investigation is made of low-temperature spatial velocity oscillations due to quasi-coherent POP emission.","Made available in DSpace on 2011-05-07T11:59:16Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9416382.pdf: 3808950 bytes, checksum: c63b3e1b5b8adc2a59a729bf4bd3b8b7 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:35:10Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9416382","(UMI)AAI9416382","http://hdl.handle.net/2142/19176"],"dc:language":["eng"],"dc:rights":["Copyright 1994 Jovanovic, Dejan"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"dc:title":["Theoretical analysis of electronic properties and transport phenomena in semiconductor nanostructures"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:12Z"}