{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19117"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19117","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Single frequency semiconductor lasers","abstract":"Single frequency semiconductor lasers are of interest for communication systems and spectroscopy. In communications, narrow linewidth is desirable to minimize dispersion effects and low cross-talk multiple wavelength channels on a single fiber. For GaAs-based lasers, the interest in narrow linewidth sources comes from the spectroscopy community that desires a light source that can be tuned to very narrow absorption spectra of various materials. For both of these applications, narrow linewidth, wavelength tunable semiconductor lasers are well-suited.","abstract_html":"Single frequency semiconductor lasers are of interest for communication systems and spectroscopy. In communications, narrow linewidth is desirable to minimize dispersion effects and low cross-talk multiple wavelength channels on a single fiber. For GaAs-based lasers, the interest in narrow linewidth sources comes from the spectroscopy community that desires a light source that can be tuned to very narrow absorption spectra of various materials. For both of these applications, narrow linewidth, wavelength tunable semiconductor lasers are well-suited.","abstract_has_math":false,"creators":["Smith, Gary Michael"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Coleman, James J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T11:57:28Z","date_published":"2011-05-07T11:57:28Z","updated_at":"2026-07-22T22:25:12Z","subjects":["Engineering, Electronics and Electrical","Physics, Optics","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Smith, Gary Michael"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9625195","(UMI)AAI9625195"],"render_values":[{"text":"AAI9625195","href":null,"code":true},{"text":"(UMI)AAI9625195","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19117","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Coleman, James J."]},{"key":"dc:creator","label":"Author","values":["Smith, Gary Michael"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T11:57:28Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Optics","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Smith, Gary Michael"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9625195","(UMI)AAI9625195","http://hdl.handle.net/2142/19117"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Single frequency semiconductor lasers are of interest for communication systems and spectroscopy. In communications, narrow linewidth is desirable to minimize dispersion effects and low cross-talk multiple wavelength channels on a single fiber. For GaAs-based lasers, the interest in narrow linewidth sources comes from the spectroscopy community that desires a light source that can be tuned to very narrow absorption spectra of various materials. For both of these applications, narrow linewidth, wavelength tunable semiconductor lasers are well-suited.","This thesis describes the development of a single epitaxial growth ridge waveguide distributed Bragg reflector (RW-DBR) laser. These lasers exhibit low thresholds, fairly high slope efficiencies, and single frequency operation with very narrow linewidth. The fabrication requires only a single epitaxial growth of a standard laser structure and then an anisotropic etch to transfer a grating pattern from the top surface of the laser into the epitaxial layers. The initial RW-DBR lasers fabricated by this method had symmetric cladding layers with a thickness of 1.2 $\\mu$m, which required etch depths of over 1 $\\mu$m in order to couple adequately to the optical mode. This required a highly anisotropic etch and limited the device design to third-order gratings. However, fairly good device performance was demonstrated with these symmetric cladding RW-DBR lasers.","To relax the constraints on the grating etch, an asymmetric cladding separate confinement heterostructure (AC-SCH) laser was developed. The AC-SCH design reduces the thickness of the top cladding layer, which results in shallower depths for the grating etch and allows the fabrication of more efficient second-order DBR gratings. The incorporation of the AC-SCH into the RW-DBR laser reduces the threshold current, increases the efficiency, and decreases the spectral linewidth.","Made available in DSpace on 2011-05-07T11:57:28Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9625195.pdf: 2653017 bytes, checksum: e344bc1f6c4d663fffb106ac690dd84f (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:34:46Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Single frequency semiconductor lasers"]}]}],"canonical_facts":{"dc:contributor":["Coleman, James J."],"dc:creator":["Smith, Gary Michael"],"dc:date":["2011-05-07T11:57:28Z","10000-01-01","1996"],"dc:description":["Single frequency semiconductor lasers are of interest for communication systems and spectroscopy. In communications, narrow linewidth is desirable to minimize dispersion effects and low cross-talk multiple wavelength channels on a single fiber. For GaAs-based lasers, the interest in narrow linewidth sources comes from the spectroscopy community that desires a light source that can be tuned to very narrow absorption spectra of various materials. For both of these applications, narrow linewidth, wavelength tunable semiconductor lasers are well-suited.","This thesis describes the development of a single epitaxial growth ridge waveguide distributed Bragg reflector (RW-DBR) laser. These lasers exhibit low thresholds, fairly high slope efficiencies, and single frequency operation with very narrow linewidth. The fabrication requires only a single epitaxial growth of a standard laser structure and then an anisotropic etch to transfer a grating pattern from the top surface of the laser into the epitaxial layers. The initial RW-DBR lasers fabricated by this method had symmetric cladding layers with a thickness of 1.2 $\\mu$m, which required etch depths of over 1 $\\mu$m in order to couple adequately to the optical mode. This required a highly anisotropic etch and limited the device design to third-order gratings. However, fairly good device performance was demonstrated with these symmetric cladding RW-DBR lasers.","To relax the constraints on the grating etch, an asymmetric cladding separate confinement heterostructure (AC-SCH) laser was developed. The AC-SCH design reduces the thickness of the top cladding layer, which results in shallower depths for the grating etch and allows the fabrication of more efficient second-order DBR gratings. The incorporation of the AC-SCH into the RW-DBR laser reduces the threshold current, increases the efficiency, and decreases the spectral linewidth.","Made available in DSpace on 2011-05-07T11:57:28Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9625195.pdf: 2653017 bytes, checksum: e344bc1f6c4d663fffb106ac690dd84f (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:34:46Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9625195","(UMI)AAI9625195","http://hdl.handle.net/2142/19117"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Smith, Gary Michael"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Optics","Engineering, Materials Science"],"dc:title":["Single frequency semiconductor lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:12Z"}