{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19075"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19075","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature","abstract":"Si(100) films were doped with 100, 200, 500, and 1000 eV $\\sp{11}$B$\\sp+$ and $\\sp{75}$As$\\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\\sp\\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\\sp+$ ion doping, decreasing the growth temperature from 800$\\sp\\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\\sp+$ ion doped films were relatively constant for growth temperatures $\\sb-$650$\\sp\\circ$C irrespective of ion energy. Ion doping with either B$\\sp+$ or As$\\sp+$ during growth at 500$\\sp\\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\\sp\\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\\sp\\circ$C varied between 2 $\\times$ 10$\\sp{14}$ cm$\\sp{-3}$ and 5 $\\times$ 10$\\sp{17}$ cm$\\sp{-3}$ for 200 and 1000 eV As$\\sp+$ ion doping, respectively.","abstract_html":"Si(100) films were doped with 100, 200, 500, and 1000 eV $\\sp{11}$B$\\sp+$ and $\\sp{75}$As$\\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\\sp\\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\\sp+$ ion doping, decreasing the growth temperature from 800$\\sp\\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\\sp+$ ion doped films were relatively constant for growth temperatures $\\sb-$650$\\sp\\circ$C irrespective of ion energy. Ion doping with either B$\\sp+$ or As$\\sp+$ during growth at 500$\\sp\\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\\sp\\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\\sp\\circ$C varied between 2 $\\times$ 10$\\sp{14}$ cm$\\sp{-3}$ and 5 $\\times$ 10$\\sp{17}$ cm$\\sp{-3}$ for 200 and 1000 eV As$\\sp+$ ion doping, respectively.","abstract_has_math":true,"creators":["Noel, Jean-Paul Francis"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T11:56:12Z","date_published":"2011-05-07T11:56:12Z","updated_at":"2026-07-22T22:25:12Z","subjects":["Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1990 Noel, Jean-Paul Francis"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021735","(UMI)AAI9021735"],"render_values":[{"text":"AAI9021735","href":null,"code":true},{"text":"(UMI)AAI9021735","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19075","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Noel, Jean-Paul Francis"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T11:56:12Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Noel, Jean-Paul Francis"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021735","(UMI)AAI9021735","http://hdl.handle.net/2142/19075"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Si(100) films were doped with 100, 200, 500, and 1000 eV $\\sp{11}$B$\\sp+$ and $\\sp{75}$As$\\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\\sp\\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\\sp+$ ion doping, decreasing the growth temperature from 800$\\sp\\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\\sp+$ ion doped films were relatively constant for growth temperatures $\\sb-$650$\\sp\\circ$C irrespective of ion energy. Ion doping with either B$\\sp+$ or As$\\sp+$ during growth at 500$\\sp\\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\\sp\\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\\sp\\circ$C varied between 2 $\\times$ 10$\\sp{14}$ cm$\\sp{-3}$ and 5 $\\times$ 10$\\sp{17}$ cm$\\sp{-3}$ for 200 and 1000 eV As$\\sp+$ ion doping, respectively.","Made available in DSpace on 2011-05-07T11:56:12Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021735.pdf: 4017041 bytes, checksum: d93de8b0178c7c511ec6766cc181097c (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:34:29Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:12-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Noel, Jean-Paul Francis"],"dc:date":["2011-05-07T11:56:12Z","10000-01-01","1990"],"dc:description":["Si(100) films were doped with 100, 200, 500, and 1000 eV $\\sp{11}$B$\\sp+$ and $\\sp{75}$As$\\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\\sp\\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\\sp+$ ion doping, decreasing the growth temperature from 800$\\sp\\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\\sp+$ ion doped films were relatively constant for growth temperatures $\\sb-$650$\\sp\\circ$C irrespective of ion energy. Ion doping with either B$\\sp+$ or As$\\sp+$ during growth at 500$\\sp\\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\\sp\\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\\sp\\circ$C varied between 2 $\\times$ 10$\\sp{14}$ cm$\\sp{-3}$ and 5 $\\times$ 10$\\sp{17}$ cm$\\sp{-3}$ for 200 and 1000 eV As$\\sp+$ ion doping, respectively.","Made available in DSpace on 2011-05-07T11:56:12Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021735.pdf: 4017041 bytes, checksum: d93de8b0178c7c511ec6766cc181097c (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:34:29Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:13:12-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9021735","(UMI)AAI9021735","http://hdl.handle.net/2142/19075"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Noel, Jean-Paul Francis"],"dc:subject":["Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:12Z"}