Geometric and electronic structure of reconstructed semiconductor surfaces;high-resolution photoemission spectroscopy (PES)
type: CreativeWork
description: The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered semiconductor surfaces. The surfaces studied have been probed via core level, valence band,. and angleresolved photoemission spectroscopy, and with the extended photoemission fme stlucture technique. The surface core levels and swface states on the Si( 111 )-(7 x 7) surface have been used to examine submonolayer deposits of Ge onto this surface. Knowledge of the initial stages of intetface formation in these systems is impmtant due to their application in heterostructure device physics. The decomposed Si-2p and Ge-3d core levels and angle-integrated valence band spectra have been analyzed as a function of Ge coverage and annealing temperature. The results suppmt the assignment of the lower binding energy component in both the Si-2p and Ge-3d cores to adatom emission. The implications with respect to adatom- to- rest-atom charge transfer are discussed. Lead adlayers on the ( 111) surfaces of Si and Ge have been examined as well. The surface phase diagram of Pb on these substrates exhibits interesting propetties which arise in patt due to the differing degrees of lattice matching ( - 4% for Pb/Si,<1% for Pb/Ge) and the nature of the clean surface reconstructions [(7 x7) vs. c(2 x8)]. Atomically abrupt interfaces are insured for these systems since Pb is insoluble in these surfaces even for temperatures well beyond the Pb melting point (340°C). Thus, they ru·e considered ideal systems to study with regru·d to metalsemiconductor intetface formation and intetface-dependent Schottky batTier studies, in conu·ast to reactive systems where intermixing usually occurs. This lack of interdiffusion has also allowed studies of the 2D melting of the Pb overlayers. The growth, desorption, Schott…
abstract: The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered semiconductor surfaces. The surfaces studied have been probed via core level, valence band,. and angleresolved photoemission spectroscopy, and with the extended photoemission fme stlucture technique. The surface core levels and swface states on the Si( 111 )-(7 x 7) surface have been used to examine submonolayer deposits of Ge onto this surface. Knowledge of the initial stages of intetface formation in these systems is impmtant due to their application in heterostructure device physics. The decomposed Si-2p and Ge-3d core levels and angle-integrated valence band spectra have been analyzed as a function of Ge coverage and annealing temperature. The results suppmt the assignment of the lower binding energy component in both the Si-2p and Ge-3d cores to adatom emission. The implications with respect to adatom- to- rest-atom charge transfer are discussed. Lead adlayers on the ( 111) surfaces of Si and Ge have been examined as well. The surface phase diagram of Pb on these substrates exhibits interesting propetties which arise in patt due to the differing degrees of lattice matching ( - 4% for Pb/Si,<1% for Pb/Ge) and the nature of the clean surface reconstructions [(7 x7) vs. c(2 x8)]. Atomically abrupt interfaces are insured for these systems since Pb is insoluble in these surfaces even for temperatures well beyond the Pb melting point (340°C). Thus, they ru·e considered ideal systems to study with regru·d to metalsemiconductor intetface formation and intetface-dependent Schottky batTier studies, in conu·ast to reactive systems where intermixing usually occurs. This lack of interdiffusion has also allowed studies of the 2D melting of the Pb overlayers. The growth, desorption, Schott…
author: Carlisle, John Arthur
language: en
keywords: geometric structure, electronic structure, reconstructed semiconductor surfaces, synchrotron radiation, reflection high-energy electron diffraction (RHEED)
date published: 2011-04-25T16:18:04Z
date modified: 2026-07-22T22:25:11Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois - Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/18871