{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/18587"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/18587","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers","abstract":"Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting transistor or tilted-charge light-emitting diode, the effective carrier recombination lifetime can be readily reduced to 23 ps (spontaneous modulation bandwidth f-3dB = 7 GHz) by employing un-doped quantum wells in the highly-doped thin base region and allowing only “fast” recombining carriers to recombine through a reverse-biased base-collector junction boundary condition. A light-emitting transistor possesses, in addition, a unique three-terminal electrical-optical characteristic potentially leading to advantageous and useful features for high-speed short-range optical transmitters and interconnects. It has been shown that a microcavity vertical-cavity surface-emitting laser employing small aperture buried-oxide current and field confinement is also demonstrated with wider mode spacing and faster carrier recombination lifetime (enhanced Purcell factor ~ 2 to 8 times, but still limited cavity), lower threshold current, larger side mode suppression ratio, and higher photon density and temperature insensitivity.","abstract_html":"Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting transistor or tilted-charge light-emitting diode, the effective carrier recombination lifetime can be readily reduced to 23 ps (spontaneous modulation bandwidth f-3dB = 7 GHz) by employing un-doped quantum wells in the highly-doped thin base region and allowing only “fast” recombining carriers to recombine through a reverse-biased base-collector junction boundary condition. A light-emitting transistor possesses, in addition, a unique three-terminal electrical-optical characteristic potentially leading to advantageous and useful features for high-speed short-range optical transmitters and interconnects. It has been shown that a microcavity vertical-cavity surface-emitting laser employing small aperture buried-oxide current and field confinement is also demonstrated with wider mode spacing and faster carrier recombination lifetime (enhanced Purcell factor ~ 2 to 8 times, but still limited cavity), lower threshold current, larger side mode suppression ratio, and higher photon density and temperature insensitivity.","abstract_has_math":false,"creators":["Wu, Chao-Hsin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Holonyak, Nick, Jr.","Cheng, Keh-Yung","Hsieh, Kuang-Chien","Jin, Jianming"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-01-21T22:50:49Z","date_published":"2011-01-21T22:50:49Z","updated_at":"2026-07-22T22:25:11Z","subjects":["Light-emitting transistor","light-emitting diode","tilted-charge","microcavity laser","transistor laser"],"languages":["en"],"rights":["Copyright 2010 Chao-Hsin Wu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/18587","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Holonyak, Nick, Jr.","Cheng, Keh-Yung","Hsieh, Kuang-Chien","Jin, Jianming"]},{"key":"dc:creator","label":"Author","values":["Wu, Chao-Hsin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-01-21T22:50:49Z","2013-01-22T11:00:20Z","2010-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Light-emitting transistor","light-emitting diode","tilted-charge","microcavity laser","transistor laser"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Chao-Hsin Wu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/18587"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting transistor or tilted-charge light-emitting diode, the effective carrier recombination lifetime can be readily reduced to 23 ps (spontaneous modulation bandwidth f-3dB = 7 GHz) by employing un-doped quantum wells in the highly-doped thin base region and allowing only “fast” recombining carriers to recombine through a reverse-biased base-collector junction boundary condition. A light-emitting transistor possesses, in addition, a unique three-terminal electrical-optical characteristic potentially leading to advantageous and useful features for high-speed short-range optical transmitters and interconnects. It has been shown that a microcavity vertical-cavity surface-emitting laser employing small aperture buried-oxide current and field confinement is also demonstrated with wider mode spacing and faster carrier recombination lifetime (enhanced Purcell factor ~ 2 to 8 times, but still limited cavity), lower threshold current, larger side mode suppression ratio, and higher photon density and temperature insensitivity.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-11-18T22:46:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Wu_Chao-Hsin.pdf: 2685540 bytes, checksum: 0e6a473357499f8b6e68801d6d7e59f6 (MD5)","Made available in DSpace on 2011-01-21T22:50:49Z (GMT). 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In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting transistor or tilted-charge light-emitting diode, the effective carrier recombination lifetime can be readily reduced to 23 ps (spontaneous modulation bandwidth f-3dB = 7 GHz) by employing un-doped quantum wells in the highly-doped thin base region and allowing only “fast” recombining carriers to recombine through a reverse-biased base-collector junction boundary condition. A light-emitting transistor possesses, in addition, a unique three-terminal electrical-optical characteristic potentially leading to advantageous and useful features for high-speed short-range optical transmitters and interconnects. It has been shown that a microcavity vertical-cavity surface-emitting laser employing small aperture buried-oxide current and field confinement is also demonstrated with wider mode spacing and faster carrier recombination lifetime (enhanced Purcell factor ~ 2 to 8 times, but still limited cavity), lower threshold current, larger side mode suppression ratio, and higher photon density and temperature insensitivity.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-11-18T22:46:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Wu_Chao-Hsin.pdf: 2685540 bytes, checksum: 0e6a473357499f8b6e68801d6d7e59f6 (MD5)","Made available in DSpace on 2011-01-21T22:50:49Z (GMT). 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