{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/18282"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/18282","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fabrication and characterization of avalanche photodetectors","abstract":"Avalanche photodetectors are important for imaging applications because of their high sensitivity and low noise levels. For imaging applications, however, a two-dimensional array of APDs is required, and there are many fabrication issues involved in making such an array over a large area. In this work, fab- rication and characterization of 32 × 32 arrays of InP (indium phosphide) based separated absorption, charge, and multiplication avalanche photode- tectors (SACM APDs) is pursued to address the fabrication issues associated with making a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, we find that the dark current of SACM APD devices mainly comes from the junction leakage. Thus, to reduce the dark current we need to improve the design of the epitaxial layers. This work also examines the dependence of cross-talk and the array packing density. A trade-off relation- ship is observed between the packing density of the devices and the leakage current.","abstract_html":"Avalanche photodetectors are important for imaging applications because of their high sensitivity and low noise levels. For imaging applications, however, a two-dimensional array of APDs is required, and there are many fabrication issues involved in making such an array over a large area. In this work, fab- rication and characterization of 32 × 32 arrays of InP (indium phosphide) based separated absorption, charge, and multiplication avalanche photode- tectors (SACM APDs) is pursued to address the fabrication issues associated with making a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, we find that the dark current of SACM APD devices mainly comes from the junction leakage. Thus, to reduce the dark current we need to improve the design of the epitaxial layers. This work also examines the dependence of cross-talk and the array packing density. A trade-off relation- ship is observed between the packing density of the devices and the leakage current.","abstract_has_math":false,"creators":["Jeong, Hyejin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Choquette, Kent D."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-01-14T22:44:32Z","date_published":"2011-01-14T22:44:32Z","updated_at":"2026-07-22T22:25:11Z","subjects":["avalanche photodetector (APD)","separated absorption, charge, and multiplication avalanche photodetectors (SACM APDs)","dark current","cross-talk"],"languages":["en"],"rights":["Copyright Hyejin Jeong 2010"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/18282","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Choquette, Kent D."]},{"key":"dc:creator","label":"Author","values":["Jeong, Hyejin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-01-14T22:44:32Z","2010-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["avalanche photodetector (APD)","separated absorption, charge, and multiplication avalanche photodetectors (SACM APDs)","dark current","cross-talk"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright Hyejin Jeong 2010"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/18282"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Avalanche photodetectors are important for imaging applications because of their high sensitivity and low noise levels. For imaging applications, however, a two-dimensional array of APDs is required, and there are many fabrication issues involved in making such an array over a large area. In this work, fab- rication and characterization of 32 × 32 arrays of InP (indium phosphide) based separated absorption, charge, and multiplication avalanche photode- tectors (SACM APDs) is pursued to address the fabrication issues associated with making a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, we find that the dark current of SACM APD devices mainly comes from the junction leakage. Thus, to reduce the dark current we need to improve the design of the epitaxial layers. This work also examines the dependence of cross-talk and the array packing density. A trade-off relation- ship is observed between the packing density of the devices and the leakage current.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-12-09T21:45:49Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Jeong_Hyejin.pdf: 6995331 bytes, checksum: 1fd281a601e78e7353fa8a0a52c96c2b (MD5)","Made available in DSpace on 2011-01-14T22:44:32Z (GMT). No. of bitstreams: 2 Jeong_Hyejin.pdf: 6995331 bytes, checksum: 1fd281a601e78e7353fa8a0a52c96c2b (MD5) license.txt: 4060 bytes, checksum: 66c67d84df09992c58e5fe9b703f3cb9 (MD5)"]},{"key":"dc:title","label":"Title","values":["Fabrication and characterization of avalanche photodetectors"]}]}],"canonical_facts":{"dc:contributor":["Choquette, Kent D."],"dc:creator":["Jeong, Hyejin"],"dc:date":["2011-01-14T22:44:32Z","2010-12"],"dc:description":["Avalanche photodetectors are important for imaging applications because of their high sensitivity and low noise levels. For imaging applications, however, a two-dimensional array of APDs is required, and there are many fabrication issues involved in making such an array over a large area. In this work, fab- rication and characterization of 32 × 32 arrays of InP (indium phosphide) based separated absorption, charge, and multiplication avalanche photode- tectors (SACM APDs) is pursued to address the fabrication issues associated with making a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, we find that the dark current of SACM APD devices mainly comes from the junction leakage. Thus, to reduce the dark current we need to improve the design of the epitaxial layers. This work also examines the dependence of cross-talk and the array packing density. A trade-off relation- ship is observed between the packing density of the devices and the leakage current.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-12-09T21:45:49Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Jeong_Hyejin.pdf: 6995331 bytes, checksum: 1fd281a601e78e7353fa8a0a52c96c2b (MD5)","Made available in DSpace on 2011-01-14T22:44:32Z (GMT). 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