{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/16827"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/16827","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Halogen-induced modification of silicon surfaces: etching roughening, and step transformations","abstract":"I have combined scanning tunneling microscopy with density functional calculations and Monte Carlo simulations to investigate halogen-induced modifications of Si surfaces, including etching, roughening and step transformations. These investigations have focused on elucidating the atomic-level details associated with the evolution of terrace and step sites on Cl-Si(100)-(2x1) under conditions of halogen supersaturation. I present a novel adsorption mechanism that is accessed upon exposing nearly-saturated Cl-Si(100)-(2x1) to a flux of Cl2, whereby dangling bonds of the nearly-saturated surface mediate the insertion of Cl adsorbates into non-equilibrium adsorption sites. The adsorbates are kinetically trapped within these sites due to energy constraints and lack of available and more favorable adsorption sites. Inserted Cl adsorbates force the surface to evolve along a novel etching pathway at elevated temperature resulting in dimer vacancy formation without the customary Si regrowth features attributed to halogen etching processes. This process is investigated at 700 – 825 K and the reaction mechanism is extracted from analysis of the appropriate rate equations.","abstract_html":"I have combined scanning tunneling microscopy with density functional calculations and Monte Carlo simulations to investigate halogen-induced modifications of Si surfaces, including etching, roughening and step transformations. These investigations have focused on elucidating the atomic-level details associated with the evolution of terrace and step sites on Cl-Si(100)-(2x1) under conditions of halogen supersaturation. I present a novel adsorption mechanism that is accessed upon exposing nearly-saturated Cl-Si(100)-(2x1) to a flux of Cl2, whereby dangling bonds of the nearly-saturated surface mediate the insertion of Cl adsorbates into non-equilibrium adsorption sites. The adsorbates are kinetically trapped within these sites due to energy constraints and lack of available and more favorable adsorption sites. Inserted Cl adsorbates force the surface to evolve along a novel etching pathway at elevated temperature resulting in dimer vacancy formation without the customary Si regrowth features attributed to halogen etching processes. This process is investigated at 700 – 825 K and the reaction mechanism is extracted from analysis of the appropriate rate equations.","abstract_has_math":false,"creators":["Butera, Robert E."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science & Engr","degree_department":null,"school":null,"contributors":["Weaver, John H.","Abelson, John R.","Petrov, Ivan G.","Rockett, Angus A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-08-20T17:59:01Z","date_published":"2010-08-20T17:59:01Z","updated_at":"2026-07-22T22:25:09Z","subjects":["Scanning Tunneling Microscopy","Si(100)","Halogen etching","Surface Science","Steps"],"languages":["en"],"rights":["Copyright 2010 Robert E. Butera"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/16827","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Weaver, John H.","Abelson, John R.","Petrov, Ivan G.","Rockett, Angus A."]},{"key":"dc:creator","label":"Author","values":["Butera, Robert E."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-08-20T17:59:01Z","2010-08"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science & Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Scanning Tunneling Microscopy","Si(100)","Halogen etching","Surface Science","Steps"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Robert E. 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The adsorbates are kinetically trapped within these sites due to energy constraints and lack of available and more favorable adsorption sites. Inserted Cl adsorbates force the surface to evolve along a novel etching pathway at elevated temperature resulting in dimer vacancy formation without the customary Si regrowth features attributed to halogen etching processes. This process is investigated at 700 – 825 K and the reaction mechanism is extracted from analysis of the appropriate rate equations.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-06-28T15:30:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 5 01- Abstract-Dedication-Acknowledgement.doc: 28672 bytes, checksum: 98c42a01905c4b44c8b9e4b1a165dfa7 (MD5) 02 - TABLE OF CONTENTS.doc: 27648 bytes, checksum: d263fa0931e401c7b1b7366f1cd8233d (MD5) 01- Title Page.doc: 24576 bytes, checksum: 7b40b7901dae8c2464560bdacd6ffd29 (MD5) 03 - Main Text Chapters 1-7.doc: 14855168 bytes, checksum: 7daa70fd5b33deee5f69a66fb62242da (MD5) Butera_Robert.pdf: 6018362 bytes, checksum: ddf8ce804a2ac636ab5fdf2b368f0819 (MD5)","Made available in DSpace on 2010-08-20T17:59:01Z (GMT). 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