{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/16801"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/16801","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Mobility and Saturation Velocity in Graphene on Silicon Dioxide","abstract":"Transport properties of exfoliated graphene samples on SiO2 are examined from four-probe electrical measurements combined with electrical and thermal modeling. Data are analyzed with practical models including gated carriers, thermal generation, “puddle” charge, and Joule heating. Graphene mobility is characterized as a function of carrier density at temperatures from 300 to 500 K. In addition, electron drift velocity is obtained at high electric fields up to 2 V/μm, at both 80 K and 300 K. Mobility displays a peak vs. carrier density and decreases with rising temperature above 300 K. The drift velocity approaches saturation at fields >1 V/μm, shows an inverse dependence on carrier density (~n^-1/2), and decreases slightly with temperature. Saturation velocity is >3×10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2×10^13 cm^-2 density. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.","abstract_html":"Transport properties of exfoliated graphene samples on SiO2 are examined from four-probe electrical measurements combined with electrical and thermal modeling. Data are analyzed with practical models including gated carriers, thermal generation, “puddle” charge, and Joule heating. Graphene mobility is characterized as a function of carrier density at temperatures from 300 to 500 K. In addition, electron drift velocity is obtained at high electric fields up to 2 V/μm, at both 80 K and 300 K. Mobility displays a peak vs. carrier density and decreases with rising temperature above 300 K. The drift velocity approaches saturation at fields >1 V/μm, shows an inverse dependence on carrier density (~n^-1/2), and decreases slightly with temperature. Saturation velocity is >3×10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2×10^13 cm^-2 density. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.","abstract_has_math":false,"creators":["Dorgan, Vincent E."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Pop, Eric"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-08-20T17:58:10Z","date_published":"2010-08-20T17:58:10Z","updated_at":"2026-07-22T22:25:09Z","subjects":["graphene","mobility","high-field"],"languages":["en"],"rights":["Copyright 2010 Vincent E. Dorgan"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/16801","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Pop, Eric"]},{"key":"dc:creator","label":"Author","values":["Dorgan, Vincent E."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-08-20T17:58:10Z","2010-08"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["graphene","mobility","high-field"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Vincent E. 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