{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/15979"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/15979","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Energy relaxation and thermal rectification in carbon devices","abstract":"Power dissipation is a major challenge in modern electronics, from battery-limited portable devices to cooling in massive data centers. The most often cited technological roadblock of nanoscale electronics is the \\textquotedblleft{}power problem\\textquotedblright{} i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. A majority of the power is dissipated during individual transistor switching, but a great deal of power is also dissipated through thermionic leakage. Therefore, a deeper understanding of power dissipation and energy efficiency at the individual device level could have a global impact, affecting all future electronics. In general, power in electronic devices is dissipated in the form of heat and is slowly lost to the environment. Given that all integrated circuits have a gate oxide (SiO$_2$) and several layers of inter-level-dielectric, the bulk of the heat is likely to be retained in the device because SiO$_2$ has a much lower thermal conductivity (1.4 W/m-K) than silicon (150 W/m-K). This leads to self-heating, mobility degradation and unreliable performance over time. This work examines the physics of energy relaxation in nanoscale transistors based on new popular materials like carbon nanotubes and graphene nanoribbons. The results hold significance for the design of future low power nanoscale devices and show that tunnel devices based on carbon nanotubes with a band gap less than 0.44 eV dissipate less than one sixtieth the power dissipated in traditional thermionic transistors. In addition, this thesis explores ways of efficient cooling of electronic devices by controlling heat flow and shows that thermal rectification in patterned graphene structures is possible.","abstract_html":"Power dissipation is a major challenge in modern electronics, from battery-limited portable devices to cooling in massive data centers. The most often cited technological roadblock of nanoscale electronics is the \\textquotedblleft{}power problem\\textquotedblright{} i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. A majority of the power is dissipated during individual transistor switching, but a great deal of power is also dissipated through thermionic leakage. Therefore, a deeper understanding of power dissipation and energy efficiency at the individual device level could have a global impact, affecting all future electronics. In general, power in electronic devices is dissipated in the form of heat and is slowly lost to the environment. Given that all integrated circuits have a gate oxide (SiO<span class=\"etd-inline-math\"><sub>2</sub></span>) and several layers of inter-level-dielectric, the bulk of the heat is likely to be retained in the device because SiO<span class=\"etd-inline-math\"><sub>2</sub></span> has a much lower thermal conductivity (1.4 W/m-K) than silicon (150 W/m-K). This leads to self-heating, mobility degradation and unreliable performance over time. This work examines the physics of energy relaxation in nanoscale transistors based on new popular materials like carbon nanotubes and graphene nanoribbons. The results hold significance for the design of future low power nanoscale devices and show that tunnel devices based on carbon nanotubes with a band gap less than 0.44 eV dissipate less than one sixtieth the power dissipated in traditional thermionic transistors. In addition, this thesis explores ways of efficient cooling of electronic devices by controlling heat flow and shows that thermal rectification in patterned graphene structures is possible.","abstract_has_math":true,"creators":["Ramasubramanian, Balaji"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Pop, Eric"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-05-18T18:53:18Z","date_published":"2010-05-18T18:53:18Z","updated_at":"2026-07-22T22:25:08Z","subjects":["carbon nanotubes","energy relaxation","power dissipation","graphene","graphene nanoribbons","phonon","thermal rectification","thermal diode","tunnel transistors","Zener tunneling","band-to-band tunneling","scattering","electron-phonon interaction","acoustic phonons","boundary scattering","acoustic simulation"],"languages":["en"],"rights":["Copyright 2010 Balaji Ramasubramanian"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/15979","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Pop, Eric"]},{"key":"dc:creator","label":"Author","values":["Ramasubramanian, Balaji"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-05-18T18:53:18Z","2012-05-19T10:00:13Z","2010-5"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["carbon nanotubes","energy relaxation","power dissipation","graphene","graphene nanoribbons","phonon","thermal rectification","thermal diode","tunnel transistors","Zener tunneling","band-to-band tunneling","scattering","electron-phonon interaction","acoustic phonons","boundary scattering","acoustic simulation"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Balaji Ramasubramanian"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/15979"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Power dissipation is a major challenge in modern electronics, from battery-limited portable devices to cooling in massive data centers. The most often cited technological roadblock of nanoscale electronics is the \\textquotedblleft{}power problem\\textquotedblright{} i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. A majority of the power is dissipated during individual transistor switching, but a great deal of power is also dissipated through thermionic leakage. Therefore, a deeper understanding of power dissipation and energy efficiency at the individual device level could have a global impact, affecting all future electronics. In general, power in electronic devices is dissipated in the form of heat and is slowly lost to the environment. Given that all integrated circuits have a gate oxide (SiO$_2$) and several layers of inter-level-dielectric, the bulk of the heat is likely to be retained in the device because SiO$_2$ has a much lower thermal conductivity (1.4 W/m-K) than silicon (150 W/m-K). This leads to self-heating, mobility degradation and unreliable performance over time. This work examines the physics of energy relaxation in nanoscale transistors based on new popular materials like carbon nanotubes and graphene nanoribbons. The results hold significance for the design of future low power nanoscale devices and show that tunnel devices based on carbon nanotubes with a band gap less than 0.44 eV dissipate less than one sixtieth the power dissipated in traditional thermionic transistors. In addition, this thesis explores ways of efficient cooling of electronic devices by controlling heat flow and shows that thermal rectification in patterned graphene structures is possible.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-30T20:46:01Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5)","Made available in DSpace on 2010-05-18T18:53:18Z (GMT). No. of bitstreams: 3 thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5) license.txt: 4070 bytes, checksum: 2d7f316ca2a941b090cd86957dde4adc (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2010-05-18T18:54:49Z Item is restricted until 2012-05-18T18:54:47Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:13Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 4 Ramasubramanian_Balaji.pdf.txt: 91580 bytes, checksum: e07287d31d01bc51e3fdfa35ec2db89b (MD5) thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5) license.txt: 4070 bytes, checksum: 2d7f316ca2a941b090cd86957dde4adc (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:13Z"]},{"key":"dc:title","label":"Title","values":["Energy relaxation and thermal rectification in carbon devices"]}]}],"canonical_facts":{"dc:contributor":["Pop, Eric"],"dc:creator":["Ramasubramanian, Balaji"],"dc:date":["2010-05-18T18:53:18Z","2012-05-19T10:00:13Z","2010-5"],"dc:description":["Power dissipation is a major challenge in modern electronics, from battery-limited portable devices to cooling in massive data centers. The most often cited technological roadblock of nanoscale electronics is the \\textquotedblleft{}power problem\\textquotedblright{} i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. A majority of the power is dissipated during individual transistor switching, but a great deal of power is also dissipated through thermionic leakage. Therefore, a deeper understanding of power dissipation and energy efficiency at the individual device level could have a global impact, affecting all future electronics. In general, power in electronic devices is dissipated in the form of heat and is slowly lost to the environment. Given that all integrated circuits have a gate oxide (SiO$_2$) and several layers of inter-level-dielectric, the bulk of the heat is likely to be retained in the device because SiO$_2$ has a much lower thermal conductivity (1.4 W/m-K) than silicon (150 W/m-K). This leads to self-heating, mobility degradation and unreliable performance over time. This work examines the physics of energy relaxation in nanoscale transistors based on new popular materials like carbon nanotubes and graphene nanoribbons. The results hold significance for the design of future low power nanoscale devices and show that tunnel devices based on carbon nanotubes with a band gap less than 0.44 eV dissipate less than one sixtieth the power dissipated in traditional thermionic transistors. In addition, this thesis explores ways of efficient cooling of electronic devices by controlling heat flow and shows that thermal rectification in patterned graphene structures is possible.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-30T20:46:01Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5)","Made available in DSpace on 2010-05-18T18:53:18Z (GMT). No. of bitstreams: 3 thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5) license.txt: 4070 bytes, checksum: 2d7f316ca2a941b090cd86957dde4adc (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2010-05-18T18:54:49Z Item is restricted until 2012-05-18T18:54:47Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:13Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 4 Ramasubramanian_Balaji.pdf.txt: 91580 bytes, checksum: e07287d31d01bc51e3fdfa35ec2db89b (MD5) thesis30-04-2010.zip: 10758209 bytes, checksum: 7321f4cf8021db26b08dcfe6f6bff4e6 (MD5) Ramasubramanian_Balaji.pdf: 2362495 bytes, checksum: 64af7c29d390320db79b0240e3e19843 (MD5) license.txt: 4070 bytes, checksum: 2d7f316ca2a941b090cd86957dde4adc (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:13Z"],"dc:identifier":["http://hdl.handle.net/2142/15979"],"dc:language":["en"],"dc:rights":["Copyright 2010 Balaji Ramasubramanian"],"dc:subject":["carbon nanotubes","energy relaxation","power dissipation","graphene","graphene nanoribbons","phonon","thermal rectification","thermal diode","tunnel transistors","Zener tunneling","band-to-band tunneling","scattering","electron-phonon interaction","acoustic phonons","boundary scattering","acoustic simulation"],"dc:title":["Energy relaxation and thermal rectification in carbon devices"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:08Z"}