{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/15601"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/15601","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Digitally enhanced CMOS RF transmitter with integrated power amplifier","abstract":"An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX chip is packaged using a low-cost chip-on-board (COB) technique. When 20-MHz bandwidth OFDM signals are transmitted, a high TX average power efficiency is achieved exploiting the dynamic current biasing of the Class-B PA and a low-loss output matching network using high-Q bondwire inductances in the package. Assisted by an integrated feedback path, a two-dimensional, digital look-up table (2-D LUT) adapted by complex gradient-descent algorithms compensates the I/Q mismatch and memoryless nonlinearities of the whole transmit path, including the severe amplitude and phase distortions of the on-chip PA. Fifth-order Butterworth transmit filters with 34 MHz cutoff frequency sufficiently attenuate the aliases of the 80 MS/s digital-to-analog converters (DACs), while retaining high in-band fidelity without corrupting the predistorted signal. When a 20 MHz, 64-QAM OFDM signal with 9.6 dB peak-to-average power ratio (PAPR) was transmitted, the measured average drain efficiency (DE) of the PA was 12.5% at 9.6 dB back-off and 17.5% at 7 dB back-off, and the corresponding error-vector magnitude (EVM) was measured −29.6 dB and −26.3 dB with equalization, respectively. Peak DE of 55% and 25 dBm saturated output power were also measured for the same PA in a stand-alone package.","abstract_html":"An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX chip is packaged using a low-cost chip-on-board (COB) technique. When 20-MHz bandwidth OFDM signals are transmitted, a high TX average power efficiency is achieved exploiting the dynamic current biasing of the Class-B PA and a low-loss output matching network using high-Q bondwire inductances in the package. Assisted by an integrated feedback path, a two-dimensional, digital look-up table (2-D LUT) adapted by complex gradient-descent algorithms compensates the I/Q mismatch and memoryless nonlinearities of the whole transmit path, including the severe amplitude and phase distortions of the on-chip PA. Fifth-order Butterworth transmit filters with 34 MHz cutoff frequency sufficiently attenuate the aliases of the 80 MS/s digital-to-analog converters (DACs), while retaining high in-band fidelity without corrupting the predistorted signal. When a 20 MHz, 64-QAM OFDM signal with 9.6 dB peak-to-average power ratio (PAPR) was transmitted, the measured average drain efficiency (DE) of the PA was 12.5% at 9.6 dB back-off and 17.5% at 7 dB back-off, and the corresponding error-vector magnitude (EVM) was measured −29.6 dB and −26.3 dB with equalization, respectively. Peak DE of 55% and 25 dBm saturated output power were also measured for the same PA in a stand-alone package.","abstract_has_math":false,"creators":["Kwon, Dae Hyun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Chiu, Yun","Feng, Milton","Rosenbaum, Elyse","Schutt-Ainé, José E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-05-14T20:52:05Z","date_published":"2010-05-14T20:52:05Z","updated_at":"2026-07-22T22:25:08Z","subjects":["Adaptive equalizer","AM-AM","AM-PM","Class-B power amplifier","Complementary metal-oxide semiconductor radio frequency (CMOS RF) transmitter","digital equalization","drain efficiency","error-vector magnitude","look-up table","memoryless nonlinearities","orthogonal frequency-division multiplexing (OFDM)","peak-to-average power ratio","power-added efficiency","power amplifier","predistortion","Complementary metal–oxide–semiconductor (CMOS)","Radio frequency (RF)"],"languages":["en"],"rights":["Copyright 2010 Dae Hyun Kwon"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/15601","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chiu, Yun","Feng, Milton","Rosenbaum, Elyse","Schutt-Ainé, José E."]},{"key":"dc:creator","label":"Author","values":["Kwon, Dae Hyun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-05-14T20:52:05Z","2012-05-15T10:00:51Z","2010-5"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Adaptive equalizer","AM-AM","AM-PM","Class-B power amplifier","Complementary metal-oxide semiconductor radio frequency (CMOS RF) transmitter","digital equalization","drain efficiency","error-vector magnitude","look-up table","memoryless nonlinearities","orthogonal frequency-division multiplexing (OFDM)","peak-to-average power ratio","power-added efficiency","power amplifier","predistortion","Complementary metal–oxide–semiconductor (CMOS)","Radio frequency (RF)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Dae Hyun Kwon"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/15601"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX chip is packaged using a low-cost chip-on-board (COB) technique. When 20-MHz bandwidth OFDM signals are transmitted, a high TX average power efficiency is achieved exploiting the dynamic current biasing of the Class-B PA and a low-loss output matching network using high-Q bondwire inductances in the package. Assisted by an integrated feedback path, a two-dimensional, digital look-up table (2-D LUT) adapted by complex gradient-descent algorithms compensates the I/Q mismatch and memoryless nonlinearities of the whole transmit path, including the severe amplitude and phase distortions of the on-chip PA. Fifth-order Butterworth transmit filters with 34 MHz cutoff frequency sufficiently attenuate the aliases of the 80 MS/s digital-to-analog converters (DACs), while retaining high in-band fidelity without corrupting the predistorted signal. When a 20 MHz, 64-QAM OFDM signal with 9.6 dB peak-to-average power ratio (PAPR) was transmitted, the measured average drain efficiency (DE) of the PA was 12.5% at 9.6 dB back-off and 17.5% at 7 dB back-off, and the corresponding error-vector magnitude (EVM) was measured −29.6 dB and −26.3 dB with equalization, respectively. Peak DE of 55% and 25 dBm saturated output power were also measured for the same PA in a stand-alone package.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-22T13:20:04Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5)","Made available in DSpace on 2010-05-14T20:52:05Z (GMT). No. of bitstreams: 4 Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_DaeHyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) license.txt: 4056 bytes, checksum: 07caa99269aa99d81d35a0b7b062825a (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2010-05-14T20:52:51Z Item is restricted until 2012-05-14T20:52:43Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-15T10:00:51Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 5 Kwon_DaeHyun.pdf.txt: 196026 bytes, checksum: 76cda2f0003f6e02fa21cb5f5e047c9a (MD5) Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_DaeHyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) license.txt: 4056 bytes, checksum: 07caa99269aa99d81d35a0b7b062825a (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-15T10:00:51Z"]},{"key":"dc:title","label":"Title","values":["Digitally enhanced CMOS RF transmitter with integrated power amplifier"]}]}],"canonical_facts":{"dc:contributor":["Chiu, Yun","Feng, Milton","Rosenbaum, Elyse","Schutt-Ainé, José E."],"dc:creator":["Kwon, Dae Hyun"],"dc:date":["2010-05-14T20:52:05Z","2012-05-15T10:00:51Z","2010-5"],"dc:description":["An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX chip is packaged using a low-cost chip-on-board (COB) technique. When 20-MHz bandwidth OFDM signals are transmitted, a high TX average power efficiency is achieved exploiting the dynamic current biasing of the Class-B PA and a low-loss output matching network using high-Q bondwire inductances in the package. Assisted by an integrated feedback path, a two-dimensional, digital look-up table (2-D LUT) adapted by complex gradient-descent algorithms compensates the I/Q mismatch and memoryless nonlinearities of the whole transmit path, including the severe amplitude and phase distortions of the on-chip PA. Fifth-order Butterworth transmit filters with 34 MHz cutoff frequency sufficiently attenuate the aliases of the 80 MS/s digital-to-analog converters (DACs), while retaining high in-band fidelity without corrupting the predistorted signal. When a 20 MHz, 64-QAM OFDM signal with 9.6 dB peak-to-average power ratio (PAPR) was transmitted, the measured average drain efficiency (DE) of the PA was 12.5% at 9.6 dB back-off and 17.5% at 7 dB back-off, and the corresponding error-vector magnitude (EVM) was measured −29.6 dB and −26.3 dB with equalization, respectively. Peak DE of 55% and 25 dBm saturated output power were also measured for the same PA in a stand-alone package.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-22T13:20:04Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5)","Made available in DSpace on 2010-05-14T20:52:05Z (GMT). No. of bitstreams: 4 Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_DaeHyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) license.txt: 4056 bytes, checksum: 07caa99269aa99d81d35a0b7b062825a (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2010-05-14T20:52:51Z Item is restricted until 2012-05-14T20:52:43Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-15T10:00:51Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 5 Kwon_DaeHyun.pdf.txt: 196026 bytes, checksum: 76cda2f0003f6e02fa21cb5f5e047c9a (MD5) Kwon_Dae Hyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) Kwon_Dae Hyun.doc: 9221632 bytes, checksum: 4e1f89301200f0f77b56aef3cf6d28a4 (MD5) Kwon_DaeHyun.pdf: 3363279 bytes, checksum: 8ef5eeb2a7e3beb8ad10167c5535efac (MD5) license.txt: 4056 bytes, checksum: 07caa99269aa99d81d35a0b7b062825a (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-15T10:00:51Z"],"dc:identifier":["http://hdl.handle.net/2142/15601"],"dc:language":["en"],"dc:rights":["Copyright 2010 Dae Hyun Kwon"],"dc:subject":["Adaptive equalizer","AM-AM","AM-PM","Class-B power amplifier","Complementary metal-oxide semiconductor radio frequency (CMOS RF) transmitter","digital equalization","drain efficiency","error-vector magnitude","look-up table","memoryless nonlinearities","orthogonal frequency-division multiplexing (OFDM)","peak-to-average power ratio","power-added efficiency","power amplifier","predistortion","Complementary metal–oxide–semiconductor (CMOS)","Radio frequency (RF)"],"dc:title":["Digitally enhanced CMOS RF transmitter with integrated power amplifier"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:08Z"}