{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/14655"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/14655","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam","abstract":"As semiconductor feature sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This work reports on one such method employing the use of an ion beam at grazing incidence along the features. This method smooths relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers Variables include beam energy and angular dependence. LER measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.","abstract_html":"As semiconductor feature sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This work reports on one such method employing the use of an ion beam at grazing incidence along the features. This method smooths relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers Variables include beam energy and angular dependence. LER measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.","abstract_has_math":false,"creators":["Struck, Corey R."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Nuclear Engineering","degree_department":null,"school":null,"contributors":["Ruzic, David N."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-01-06T16:20:35Z","date_published":"2010-01-06T16:20:35Z","updated_at":"2026-07-22T22:25:07Z","subjects":["Line Edge Roughness","Line Width Roughness"],"languages":["en"],"rights":["Copyright 2009 Corey R. Struck"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/14655","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Ruzic, David N."]},{"key":"dc:creator","label":"Author","values":["Struck, Corey R."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-01-06T16:20:35Z","2009-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Nuclear Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Line Edge Roughness","Line Width Roughness"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2009 Corey R. Struck"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/14655"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["As semiconductor feature sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This work reports on one such method employing the use of an ion beam at grazing incidence along the features. This method smooths relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers Variables include beam energy and angular dependence. LER measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-12-03T15:22:41Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5)","Made available in DSpace on 2010-01-06T16:20:35Z (GMT). No. of bitstreams: 5 license.txt: 4060 bytes, checksum: 98b131b9d313fd33c590a995b8f45e2d (MD5) Struck_Corey.pdf: 23334295 bytes, checksum: b22a2af3fa92d0a59683bd27f4d3e081 (MD5) 1_Struck_Corey.pdf: 23335427 bytes, checksum: 3e7109ed64d76467dddcf65c0245920d (MD5) 2_Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5) 3_Struck_Corey.pdf: 23348761 bytes, checksum: 223d644e0b43b239458e8f5f7acd2907 (MD5)"]},{"key":"dc:title","label":"Title","values":["Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam"]}]}],"canonical_facts":{"dc:contributor":["Ruzic, David N."],"dc:creator":["Struck, Corey R."],"dc:date":["2010-01-06T16:20:35Z","2009-12"],"dc:description":["As semiconductor feature sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This work reports on one such method employing the use of an ion beam at grazing incidence along the features. This method smooths relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers Variables include beam energy and angular dependence. LER measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-12-03T15:22:41Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5)","Made available in DSpace on 2010-01-06T16:20:35Z (GMT). No. of bitstreams: 5 license.txt: 4060 bytes, checksum: 98b131b9d313fd33c590a995b8f45e2d (MD5) Struck_Corey.pdf: 23334295 bytes, checksum: b22a2af3fa92d0a59683bd27f4d3e081 (MD5) 1_Struck_Corey.pdf: 23335427 bytes, checksum: 3e7109ed64d76467dddcf65c0245920d (MD5) 2_Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5) 3_Struck_Corey.pdf: 23348761 bytes, checksum: 223d644e0b43b239458e8f5f7acd2907 (MD5)"],"dc:identifier":["http://hdl.handle.net/2142/14655"],"dc:language":["en"],"dc:rights":["Copyright 2009 Corey R. Struck"],"dc:subject":["Line Edge Roughness","Line Width Roughness"],"dc:title":["Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam"],"thesis:degree_discipline":["Nuclear Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:07Z"}