{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/132605"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/132605","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress","abstract":"Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance degradation when exposed to elevated temperatures and electrical stress over long durations. This study aims to investigate the degradation behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating the devices within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of the HEMT device to record on-state drain-source voltage, VDS (on), across a shunt resistor and the corresponding drain current, enabling the calculation of on-state drain-source resistance, RDS (on), throughout the stress period using offline measurement methods. The observed 10–25% increase in RDS (on) indicates progressive degradation likely associated with charge trapping and thermally induced mobility reduction. Results show that RDS (on) is a meaningful degradation indicator, supporting both reliability assessment and the development of prognostics and health management strategies for GaN power devices. The measurement approach allows researchers to continuously track the device health without applying intrusive and destructive test configurations. The findings and methodology also establish the foundation for future remaining useful life prediction and data driven prognostics model development, guiding the design of more robust GaN-based power electronics with improved thermal management and reliability margins.","abstract_html":"Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance degradation when exposed to elevated temperatures and electrical stress over long durations. This study aims to investigate the degradation behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating the devices within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of the HEMT device to record on-state drain-source voltage, VDS (on), across a shunt resistor and the corresponding drain current, enabling the calculation of on-state drain-source resistance, RDS (on), throughout the stress period using offline measurement methods. The observed 10–25% increase in RDS (on) indicates progressive degradation likely associated with charge trapping and thermally induced mobility reduction. Results show that RDS (on) is a meaningful degradation indicator, supporting both reliability assessment and the development of prognostics and health management strategies for GaN power devices. The measurement approach allows researchers to continuously track the device health without applying intrusive and destructive test configurations. The findings and methodology also establish the foundation for future remaining useful life prediction and data driven prognostics model development, guiding the design of more robust GaN-based power electronics with improved thermal management and reliability margins.","abstract_has_math":false,"creators":["Luo, Yanbin"],"institution":"University of Illinois Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Systems & Entrepreneurial Engr","degree_department":null,"school":null,"contributors":["Wang, Pingfeng"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-12","date_published":"2025-12","updated_at":"2026-07-22T22:25:07Z","subjects":["Gallium Nitride (GaN) HEMTs","Accelerated Thermal Degradation","High-Temperature Reliability Testing","On-State Resistance (RDS(on))","Prognostics and Health Management (PHM)"],"languages":["en"],"rights":["Copyright 2025 Yanbin Luo"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/132605","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Wang, Pingfeng"]},{"key":"dc:creator","label":"Author","values":["Luo, Yanbin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-12","2025-12-12"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Systems & Entrepreneurial Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Gallium Nitride (GaN) HEMTs","Accelerated Thermal Degradation","High-Temperature Reliability Testing","On-State Resistance (RDS(on))","Prognostics and Health Management (PHM)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Yanbin Luo"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/132605"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance degradation when exposed to elevated temperatures and electrical stress over long durations. This study aims to investigate the degradation behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating the devices within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of the HEMT device to record on-state drain-source voltage, VDS (on), across a shunt resistor and the corresponding drain current, enabling the calculation of on-state drain-source resistance, RDS (on), throughout the stress period using offline measurement methods. The observed 10–25% increase in RDS (on) indicates progressive degradation likely associated with charge trapping and thermally induced mobility reduction. Results show that RDS (on) is a meaningful degradation indicator, supporting both reliability assessment and the development of prognostics and health management strategies for GaN power devices. The measurement approach allows researchers to continuously track the device health without applying intrusive and destructive test configurations. The findings and methodology also establish the foundation for future remaining useful life prediction and data driven prognostics model development, guiding the design of more robust GaN-based power electronics with improved thermal management and reliability margins.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2026-02-19 without embargo terms","The student, Yanbin Luo, accepted the attached license on 2025-12-12 at 00:11.","The student, Yanbin Luo, submitted this Thesis for approval on 2025-12-12 at 00:26.","This Thesis was approved for publication on 2025-12-12 at 10:17.","DSpace SAF Submission Ingestion Package generated from Vireo submission #23144 on 2026-02-19 at 18:30:36"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress"]}]}],"canonical_facts":{"dc:contributor":["Wang, Pingfeng"],"dc:creator":["Luo, Yanbin"],"dc:date":["2025-12","2025-12-12"],"dc:description":["Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance degradation when exposed to elevated temperatures and electrical stress over long durations. This study aims to investigate the degradation behavior of commercial EPC90122 GaN HEMT devices under controlled high-temperature operating conditions. Accelerated degradation testing is conducted by heating the devices within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of the HEMT device to record on-state drain-source voltage, VDS (on), across a shunt resistor and the corresponding drain current, enabling the calculation of on-state drain-source resistance, RDS (on), throughout the stress period using offline measurement methods. The observed 10–25% increase in RDS (on) indicates progressive degradation likely associated with charge trapping and thermally induced mobility reduction. Results show that RDS (on) is a meaningful degradation indicator, supporting both reliability assessment and the development of prognostics and health management strategies for GaN power devices. The measurement approach allows researchers to continuously track the device health without applying intrusive and destructive test configurations. The findings and methodology also establish the foundation for future remaining useful life prediction and data driven prognostics model development, guiding the design of more robust GaN-based power electronics with improved thermal management and reliability margins.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2026-02-19 without embargo terms","The student, Yanbin Luo, accepted the attached license on 2025-12-12 at 00:11.","The student, Yanbin Luo, submitted this Thesis for approval on 2025-12-12 at 00:26.","This Thesis was approved for publication on 2025-12-12 at 10:17.","DSpace SAF Submission Ingestion Package generated from Vireo submission #23144 on 2026-02-19 at 18:30:36"],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/132605"],"dc:language":["en"],"dc:rights":["Copyright 2025 Yanbin Luo"],"dc:subject":["Gallium Nitride (GaN) HEMTs","Accelerated Thermal Degradation","High-Temperature Reliability Testing","On-State Resistance (RDS(on))","Prognostics and Health Management (PHM)"],"dc:title":["Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Systems & Entrepreneurial Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:07Z"}