{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/130226"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/130226","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Strain induced mobility enhancement in monolayer two dimensional molybdenum disulfide","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-08-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-08-01","abstract_has_math":false,"creators":["Afrid, Sheikh"],"institution":"University of Illinois Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rakheja, Shaloo"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-07-25","date_published":"2025-07-25","updated_at":"2026-07-22T22:25:06Z","subjects":["2d Materials","Tmds","Mos2","Strain Engineering","Carrier Mobility"],"languages":["en","eng"],"rights":["© 2025 Sheikh Mohd Ta-Seen Afrid"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/130226","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rakheja, Shaloo"]},{"key":"dc:creator","label":"Author","values":["Afrid, Sheikh"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-07-25","2025-08"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["2d Materials","Tmds","Mos2","Strain Engineering","Carrier Mobility"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["© 2025 Sheikh Mohd Ta-Seen Afrid"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/130226"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-08-01","The student, Sheikh Afrid, accepted the attached license on 2025-07-24 at 23:39.","The student, Sheikh Afrid, submitted this Thesis for approval on 2025-07-24 at 23:46.","This Thesis was approved for publication on 2025-07-25 at 09:24.","DSpace SAF Submission Ingestion Package generated from Vireo submission #22722 on 2025-10-25 at 15:54:35","Strain engineering has emerged as a powerful and versatile technique for modulating the transport properties of two-dimensional (2D) materials. In this study, we investigate the effects of the biaxial strain (compressive and tensile) on the carrier mobility of monolayer transition metal dichalcogenides (TMD), with a particular focus on molybdenum disulfide (MoS₂). Using a combination of ab initio electronic structure calculations and physics-based transport modeling, we analyze how mechanical strain alters the band and phonon structures, as well as influences key scattering mechanisms, including longitudinal acoustic (LA), longitudinal optical (LO), surface optical (SO) phonons, and charged impurity scattering, all within the framework of static dielectric screening. Our results show that tensile strain significantly enhances carrier mobility by suppressing intervalley scattering rates, while compressive strain has the opposite effect, leading to mobility degradation. In addition, we examine the dependence of mobility on the temperature, carrier concentration, dielectric environment, and impurity density parameters, providing a detailed picture of transport behavior in different operational regimes. These findings demonstrate the effectiveness of strain as a tunable design parameter for optimizing charge transport in 2D TMD-based devices and contribute to the broader goal of enabling mechanically controlled electronics in next-generation nanoscale systems."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Strain induced mobility enhancement in monolayer two dimensional molybdenum disulfide"]}]}],"canonical_facts":{"dc:contributor":["Rakheja, Shaloo"],"dc:creator":["Afrid, Sheikh"],"dc:date":["2025-07-25","2025-08"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-08-01","The student, Sheikh Afrid, accepted the attached license on 2025-07-24 at 23:39.","The student, Sheikh Afrid, submitted this Thesis for approval on 2025-07-24 at 23:46.","This Thesis was approved for publication on 2025-07-25 at 09:24.","DSpace SAF Submission Ingestion Package generated from Vireo submission #22722 on 2025-10-25 at 15:54:35","Strain engineering has emerged as a powerful and versatile technique for modulating the transport properties of two-dimensional (2D) materials. In this study, we investigate the effects of the biaxial strain (compressive and tensile) on the carrier mobility of monolayer transition metal dichalcogenides (TMD), with a particular focus on molybdenum disulfide (MoS₂). Using a combination of ab initio electronic structure calculations and physics-based transport modeling, we analyze how mechanical strain alters the band and phonon structures, as well as influences key scattering mechanisms, including longitudinal acoustic (LA), longitudinal optical (LO), surface optical (SO) phonons, and charged impurity scattering, all within the framework of static dielectric screening. Our results show that tensile strain significantly enhances carrier mobility by suppressing intervalley scattering rates, while compressive strain has the opposite effect, leading to mobility degradation. In addition, we examine the dependence of mobility on the temperature, carrier concentration, dielectric environment, and impurity density parameters, providing a detailed picture of transport behavior in different operational regimes. These findings demonstrate the effectiveness of strain as a tunable design parameter for optimizing charge transport in 2D TMD-based devices and contribute to the broader goal of enabling mechanically controlled electronics in next-generation nanoscale systems."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/130226"],"dc:language":["en","eng"],"dc:rights":["© 2025 Sheikh Mohd Ta-Seen Afrid"],"dc:subject":["2d Materials","Tmds","Mos2","Strain Engineering","Carrier Mobility"],"dc:title":["Strain induced mobility enhancement in monolayer two dimensional molybdenum disulfide"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:06Z"}