{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/129730"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/129730","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Monte Carlo device modeling of 3D n-FinFETs to investigate heat generation","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_has_math":false,"creators":["Dastider, Ankan Ghosh"],"institution":"University of Illinois Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rakheja, Shaloo"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-05-08","date_published":"2025-05-08","updated_at":"2026-07-22T22:25:05Z","subjects":["Monte Carlo","Finfet","Tcad","Semiconductor Device","Heat Generation","Scattering"],"languages":["en","eng"],"rights":["Copyright 2025 Ankan Dastider"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/129730","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rakheja, Shaloo"]},{"key":"dc:creator","label":"Author","values":["Dastider, Ankan Ghosh"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-05-08","2025-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Monte Carlo","Finfet","Tcad","Semiconductor Device","Heat Generation","Scattering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Ankan Dastider"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/129730"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Ankan Dastider, accepted the attached license on 2025-05-07 at 16:17.","The student, Ankan Dastider, submitted this Thesis for approval on 2025-05-07 at 16:28.","This Thesis was approved for publication on 2025-05-08 at 16:33.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21997 on 2025-10-19 at 19:54:11","Understanding heat generation in transistors is not only interesting from a physics perspective but is also crucial for addressing self-heating and ensuring the reliability of nanoscale devices. Although FinFETs exhibit superior electrostatics compared to traditional planar structures, they suffer from self-heating which is exacerbated by advanced scaling. Since it is challenging to measure heat conduction at the nanoscale, advanced TCAD simulations are essential for understanding how heat is generated and transferred in such small structures. In this work, a 3D Monte Carlo (MC) device simulator is employed to investigate the spatial profile of heat source inside an 18-nm gate length n-FinFET, which is further used to estimate the lattice temperature during nominal device operation. We find that the average electron energy peaks to roughly 0.8 eV near the drain end (electron temperature ~ 6000 K) and it decays to its equilibrium value over an energy-relaxation length of ~ 20 nm. Crucially, this heat source gives an elevated lattice temperature of 428 K near the drain end, while the entire channel also operates much above the ambient temperature of 300 K, whereas a hypothetical Gaussian heat source is shown to result in an inaccurate spatial profile of the lattice temperature. Our results show that the design of FinFETs for reliability must properly account for electron heating and electron-phonon scatterings throughout the device."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Monte Carlo device modeling of 3D n-FinFETs to investigate heat generation"]}]}],"canonical_facts":{"dc:contributor":["Rakheja, Shaloo"],"dc:creator":["Dastider, Ankan Ghosh"],"dc:date":["2025-05-08","2025-05"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Ankan Dastider, accepted the attached license on 2025-05-07 at 16:17.","The student, Ankan Dastider, submitted this Thesis for approval on 2025-05-07 at 16:28.","This Thesis was approved for publication on 2025-05-08 at 16:33.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21997 on 2025-10-19 at 19:54:11","Understanding heat generation in transistors is not only interesting from a physics perspective but is also crucial for addressing self-heating and ensuring the reliability of nanoscale devices. Although FinFETs exhibit superior electrostatics compared to traditional planar structures, they suffer from self-heating which is exacerbated by advanced scaling. Since it is challenging to measure heat conduction at the nanoscale, advanced TCAD simulations are essential for understanding how heat is generated and transferred in such small structures. In this work, a 3D Monte Carlo (MC) device simulator is employed to investigate the spatial profile of heat source inside an 18-nm gate length n-FinFET, which is further used to estimate the lattice temperature during nominal device operation. We find that the average electron energy peaks to roughly 0.8 eV near the drain end (electron temperature ~ 6000 K) and it decays to its equilibrium value over an energy-relaxation length of ~ 20 nm. Crucially, this heat source gives an elevated lattice temperature of 428 K near the drain end, while the entire channel also operates much above the ambient temperature of 300 K, whereas a hypothetical Gaussian heat source is shown to result in an inaccurate spatial profile of the lattice temperature. Our results show that the design of FinFETs for reliability must properly account for electron heating and electron-phonon scatterings throughout the device."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/129730"],"dc:language":["en","eng"],"dc:rights":["Copyright 2025 Ankan Dastider"],"dc:subject":["Monte Carlo","Finfet","Tcad","Semiconductor Device","Heat Generation","Scattering"],"dc:title":["Monte Carlo device modeling of 3D n-FinFETs to investigate heat generation"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:05Z"}