{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/129725"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/129725","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Scaling to submicron for III-nitride optoelectronic devices: Applications in micro light emitting diodes and resonant tunneling diodes","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_has_math":false,"creators":["Chiu, Yu-Chieh"],"institution":"University of Illinois Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Bayram, Can","Dallesasse, John","Kim, Kevin","Lyding, Joseph W","Basceri, Cem"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-04-30","date_published":"2025-04-30","updated_at":"2026-07-22T22:25:05Z","subjects":["micro light-emitting diode","resonant tunneling diode","optoelectronic devices","semiconductor device fabrication"],"languages":["en","eng"],"rights":["Copyright 2025 Yu-Chieh Chiu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/129725","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Bayram, Can","Dallesasse, John","Kim, Kevin","Lyding, Joseph W","Basceri, Cem"]},{"key":"dc:creator","label":"Author","values":["Chiu, Yu-Chieh"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-04-30","2025-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["micro light-emitting diode","resonant tunneling diode","optoelectronic devices","semiconductor device fabrication"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Yu-Chieh Chiu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/129725"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Yu-Chieh Chiu, accepted the attached license on 2025-04-25 at 12:44.","The student, Yu-Chieh Chiu, submitted this Dissertation for approval on 2025-04-25 at 12:59.","This Dissertation was approved for publication on 2025-04-30 at 16:54.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21974 on 2025-10-19 at 19:54:04","III-Nitride-based optoelectronic devices have a broad range of applications, from solid state lighting, displays and advanced light sources, to communications and sensing. Micro-LEDs enables next generation displays for virtual and augmented reality, visible light communications, and advanced light sources due to their scalability, high speed, high luminance, and long lifetimes amongst other befits compared to existing technologies. While III-Nitride-based resonant tunneling diodes (RTD) pave way for reliable room temperature THz emitters for security, sensing, imaging, and communications. This thesis first investigates efficiency measurements and demonstrates a method to determine the absolute internal quantum efficiency of LEDs. Structural and optical studies were coupled with a channel-based recombination model to determine the absolute IQE of LEDs. Next, the challenges and development of the fabrication process for sub-micron III-Nitride devices (LEDs and RTDs) are discussed. An electron beam lithography-based fabrication process was developed for mesa formation, oxide opening, and contact metallization/liftoff. Fabrication of electrically injected sub-micron LEDs and RTDs are demonstrated. The properties of the smallest sub-micron top-down fabricated LEDs down to 500 nm is studied. Finally, properties of sub-micron RTDs are studied, demonstrating repeatable negative differential resistance in cubic III-Nitride (AlGaN) based RTDs."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Scaling to submicron for III-nitride optoelectronic devices: Applications in micro light emitting diodes and resonant tunneling diodes"]}]}],"canonical_facts":{"dc:contributor":["Bayram, Can","Dallesasse, John","Kim, Kevin","Lyding, Joseph W","Basceri, Cem"],"dc:creator":["Chiu, Yu-Chieh"],"dc:date":["2025-04-30","2025-05"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Yu-Chieh Chiu, accepted the attached license on 2025-04-25 at 12:44.","The student, Yu-Chieh Chiu, submitted this Dissertation for approval on 2025-04-25 at 12:59.","This Dissertation was approved for publication on 2025-04-30 at 16:54.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21974 on 2025-10-19 at 19:54:04","III-Nitride-based optoelectronic devices have a broad range of applications, from solid state lighting, displays and advanced light sources, to communications and sensing. Micro-LEDs enables next generation displays for virtual and augmented reality, visible light communications, and advanced light sources due to their scalability, high speed, high luminance, and long lifetimes amongst other befits compared to existing technologies. While III-Nitride-based resonant tunneling diodes (RTD) pave way for reliable room temperature THz emitters for security, sensing, imaging, and communications. This thesis first investigates efficiency measurements and demonstrates a method to determine the absolute internal quantum efficiency of LEDs. Structural and optical studies were coupled with a channel-based recombination model to determine the absolute IQE of LEDs. Next, the challenges and development of the fabrication process for sub-micron III-Nitride devices (LEDs and RTDs) are discussed. An electron beam lithography-based fabrication process was developed for mesa formation, oxide opening, and contact metallization/liftoff. Fabrication of electrically injected sub-micron LEDs and RTDs are demonstrated. The properties of the smallest sub-micron top-down fabricated LEDs down to 500 nm is studied. Finally, properties of sub-micron RTDs are studied, demonstrating repeatable negative differential resistance in cubic III-Nitride (AlGaN) based RTDs."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/129725"],"dc:language":["en","eng"],"dc:rights":["Copyright 2025 Yu-Chieh Chiu"],"dc:subject":["micro light-emitting diode","resonant tunneling diode","optoelectronic devices","semiconductor device fabrication"],"dc:title":["Scaling to submicron for III-nitride optoelectronic devices: Applications in micro light emitting diodes and resonant tunneling diodes"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:05Z"}