{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/129664"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/129664","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Atomically precise single Graphene Nanoribbon transistor","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","abstract_has_math":false,"creators":["Huang, Pin-Chiao"],"institution":"University of Illinois Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Lyding, Joseph W","Rakheja, Shaloo","Girolami, Gregory S","Dragic, Peter D","Sinitskii, Alexander"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-02-21","date_published":"2025-02-21","updated_at":"2026-07-22T22:25:05Z","subjects":["silicon","scanning tunneling microscopy","surface cleaning","atomically flat","graphene nanoribbon"],"languages":["en","eng"],"rights":["Copyright 2025 Pin-Chiao Huang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/129664","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lyding, Joseph W","Rakheja, Shaloo","Girolami, Gregory S","Dragic, Peter D","Sinitskii, Alexander"]},{"key":"dc:creator","label":"Author","values":["Huang, Pin-Chiao"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-02-21","2025-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["silicon","scanning tunneling microscopy","surface cleaning","atomically flat","graphene nanoribbon"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Pin-Chiao Huang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/129664"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Pin-Chiao Huang, accepted the attached license on 2025-02-11 at 04:01.","The student, Pin-Chiao Huang, submitted this Dissertation for approval on 2025-02-11 at 04:02.","This Dissertation was approved for publication on 2025-02-21 at 09:36.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21641 on 2025-10-19 at 19:52:23","This dissertation addresses the challenges in fabricating single graphene nanoribbon (GNR) transistors, particularly the difficulty in forming reliable and reproducible metal contacts. A novel low-voltage, direct-write scanning tunneling microscopy (STM) technique is introduced to pattern sub-5 nm metallic hafnium diboride (HfB2) contact pads directly onto individual GNRs in an ultrahigh vacuum environment. Scanning tunneling spectroscopy (STS) verifies the metallic and semiconducting natures of the HfB2 and GNRs, respectively, demonstrating that the STM process does not damage the GNRs. The deposition of HfB2 induces band-bending in the GNRs, forming local p-n junctions, and the degree of band-bending can be controlled by varying the metal work functions, eliminating the need for complex chemical doping. This contact engineering method simplifies the fabrication process for high-performance single GNR transistors. Additionally, the dissertation explores the fabrication of larger electrodes for transport measurements and the challenges associated with electrode instability and thermal damage during the cleaning process. The potential applications of STM-EBID for fabricating 3D nanostructures, including mechanical resonators, switches, and single-photon detectors, are also discussed. This work marks a significant advancement in GNR-based nanoelectronics, providing a reliable approach for precise metal contacts and furthering the integration of GNRs into functional electronic devices."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Atomically precise single Graphene Nanoribbon transistor"]}]}],"canonical_facts":{"dc:contributor":["Lyding, Joseph W","Rakheja, Shaloo","Girolami, Gregory S","Dragic, Peter D","Sinitskii, Alexander"],"dc:creator":["Huang, Pin-Chiao"],"dc:date":["2025-02-21","2025-05"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01","The student, Pin-Chiao Huang, accepted the attached license on 2025-02-11 at 04:01.","The student, Pin-Chiao Huang, submitted this Dissertation for approval on 2025-02-11 at 04:02.","This Dissertation was approved for publication on 2025-02-21 at 09:36.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21641 on 2025-10-19 at 19:52:23","This dissertation addresses the challenges in fabricating single graphene nanoribbon (GNR) transistors, particularly the difficulty in forming reliable and reproducible metal contacts. A novel low-voltage, direct-write scanning tunneling microscopy (STM) technique is introduced to pattern sub-5 nm metallic hafnium diboride (HfB2) contact pads directly onto individual GNRs in an ultrahigh vacuum environment. Scanning tunneling spectroscopy (STS) verifies the metallic and semiconducting natures of the HfB2 and GNRs, respectively, demonstrating that the STM process does not damage the GNRs. The deposition of HfB2 induces band-bending in the GNRs, forming local p-n junctions, and the degree of band-bending can be controlled by varying the metal work functions, eliminating the need for complex chemical doping. This contact engineering method simplifies the fabrication process for high-performance single GNR transistors. Additionally, the dissertation explores the fabrication of larger electrodes for transport measurements and the challenges associated with electrode instability and thermal damage during the cleaning process. The potential applications of STM-EBID for fabricating 3D nanostructures, including mechanical resonators, switches, and single-photon detectors, are also discussed. This work marks a significant advancement in GNR-based nanoelectronics, providing a reliable approach for precise metal contacts and furthering the integration of GNRs into functional electronic devices."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/129664"],"dc:language":["en","eng"],"dc:rights":["Copyright 2025 Pin-Chiao Huang"],"dc:subject":["silicon","scanning tunneling microscopy","surface cleaning","atomically flat","graphene nanoribbon"],"dc:title":["Atomically precise single Graphene Nanoribbon transistor"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:05Z"}