{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/129637"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/129637","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Photonic integration of divacancy color centers in silicon carbide and heterogeneous integration of lithium niobate on III-V/Si substrates","abstract":"Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01","abstract_html":"Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01","abstract_has_math":false,"creators":["Misra, Yuvraj"],"institution":"University of Illinois Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Anderson, Chris"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-05-07","date_published":"2025-05-07","updated_at":"2026-07-22T22:25:05Z","subjects":["Quantum Photonics","Color Centers","Silicon Carbide","Solid-state Defects","Photonic Integrated Circuits","Lithium Niobate","Transceivers","Co-packaged Optics"],"languages":["en","eng"],"rights":["Copyright 2025 Yuvraj Misra"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/129637","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Anderson, Chris"]},{"key":"dc:creator","label":"Author","values":["Misra, Yuvraj"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-05-07","2025-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum Photonics","Color Centers","Silicon Carbide","Solid-state Defects","Photonic Integrated Circuits","Lithium Niobate","Transceivers","Co-packaged Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Yuvraj Misra"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/129637"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01","The student, Yuvraj Misra, accepted the attached license on 2025-05-06 at 15:06.","The student, Yuvraj Misra, submitted this Thesis for approval on 2025-05-06 at 15:44.","This Thesis was approved for publication on 2025-05-07 at 13:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #22237 on 2025-10-19 at 19:17:09","In this thesis, I present two independent projects carried out during my second year of the MS program. The first is titled \"Photonic Integration of Divacancy Color Centers in Silicon Carbide\", and the second focuses on the \"Heterogeneous Integration of Lithium Niobate on III-V/Si Substrates\". Chapter 1 covers the work on divacancy centers in silicon carbide (SiC), while Chapter 2 discusses the heterogeneous integration effort. In Chapter 1, I begin by laying out the motivation for using solid-state defects as promising candidates for quantum repeaters. An ideal quantum repeater requires a qubit that can interface with light and a robust quantum memory that’s well-coupled to it. Among the various systems explored, divacancy centers in SiC stand out due to their unique optical, electrical, and quantum properties. The bulk of this chapter focuses on unpacking each of these aspects. That said, most of the described work is based on divacancy centers in bulk SiC, and an understanding of how they perform in nanostructured environments is limited. Our short-term goal is to develop high-quality factor, low mode volume, and noise-resilient nanophotonic devices on a silicon carbide-on-insulator platform. This direction is motivated by the potential of photonic integrated color centers to make quantum communication more scalable and efficient. Towards the end of the chapter, I describe the fabrication progress we've made in the past few months toward this goal. Chapter 2 shifts focus to our efforts on integrating thin-film lithium niobate (TFLN) with III-V/Si substrates. TFLN on insulator (typically on silicon dioxide) is emerging as a versatile photonics platform, especially for data communication. Lithium niobate offers low-loss propagation, a high electro-optic coefficient, and supports efficient frequency comb generation - making it a strong candidate for modulators and comb sources. When combined with III-V gain materials, this platform opens up the possibility for compact, low-cost transceivers, with promising applications in commercial data centers."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Photonic integration of divacancy color centers in silicon carbide and heterogeneous integration of lithium niobate on III-V/Si substrates"]}]}],"canonical_facts":{"dc:contributor":["Anderson, Chris"],"dc:creator":["Misra, Yuvraj"],"dc:date":["2025-05-07","2025-05"],"dc:description":["Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01","The student, Yuvraj Misra, accepted the attached license on 2025-05-06 at 15:06.","The student, Yuvraj Misra, submitted this Thesis for approval on 2025-05-06 at 15:44.","This Thesis was approved for publication on 2025-05-07 at 13:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #22237 on 2025-10-19 at 19:17:09","In this thesis, I present two independent projects carried out during my second year of the MS program. The first is titled \"Photonic Integration of Divacancy Color Centers in Silicon Carbide\", and the second focuses on the \"Heterogeneous Integration of Lithium Niobate on III-V/Si Substrates\". Chapter 1 covers the work on divacancy centers in silicon carbide (SiC), while Chapter 2 discusses the heterogeneous integration effort. In Chapter 1, I begin by laying out the motivation for using solid-state defects as promising candidates for quantum repeaters. An ideal quantum repeater requires a qubit that can interface with light and a robust quantum memory that’s well-coupled to it. Among the various systems explored, divacancy centers in SiC stand out due to their unique optical, electrical, and quantum properties. The bulk of this chapter focuses on unpacking each of these aspects. That said, most of the described work is based on divacancy centers in bulk SiC, and an understanding of how they perform in nanostructured environments is limited. Our short-term goal is to develop high-quality factor, low mode volume, and noise-resilient nanophotonic devices on a silicon carbide-on-insulator platform. This direction is motivated by the potential of photonic integrated color centers to make quantum communication more scalable and efficient. Towards the end of the chapter, I describe the fabrication progress we've made in the past few months toward this goal. Chapter 2 shifts focus to our efforts on integrating thin-film lithium niobate (TFLN) with III-V/Si substrates. TFLN on insulator (typically on silicon dioxide) is emerging as a versatile photonics platform, especially for data communication. Lithium niobate offers low-loss propagation, a high electro-optic coefficient, and supports efficient frequency comb generation - making it a strong candidate for modulators and comb sources. When combined with III-V gain materials, this platform opens up the possibility for compact, low-cost transceivers, with promising applications in commercial data centers."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/129637"],"dc:language":["en","eng"],"dc:rights":["Copyright 2025 Yuvraj Misra"],"dc:subject":["Quantum Photonics","Color Centers","Silicon Carbide","Solid-state Defects","Photonic Integrated Circuits","Lithium Niobate","Transceivers","Co-packaged Optics"],"dc:title":["Photonic integration of divacancy color centers in silicon carbide and heterogeneous integration of lithium niobate on III-V/Si substrates"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:05Z"}